scholarly journals Notice the Analog Circuit Technology. RF Systems Need Analog Circuit Technologies.

1998 ◽  
Vol 118 (7/8) ◽  
pp. 422-425
Author(s):  
NAOFUMI OKUBO
Keyword(s):  
Analog Circuit ◽  
Rf Systems ◽  
Circuit Technology

scholarly journals A New Automated Preparation Process by Electrochemical Corrosion of STM Tungsten Tips

2021 ◽  
Vol 252 ◽  
pp. 02020
Author(s):  
Li Luo ◽  
Wang Jingliang ◽  
Liu Fang ◽  
Yang Song ◽  
Duan Qizhi
Keyword(s):  
Scanning Tunneling Microscope ◽  
Analog Circuit ◽  
Materials Science ◽  
2D Materials ◽  
Electrochemical Corrosion ◽  
Scanning Tunneling ◽  
Preparation Process ◽  
Tunneling Microscope ◽  
Stm Tips ◽  
Circuit Technology

Scanning tunneling microscope (STM) is one of the most important instruments in the field of two-dimensional(2D) materials science while the STM tip is one of the most important parts in STM. Thus, we exhibit a new automated preparation process by electrochemical corrosion of STM tungsten(W) tips based on analog circuit technology in this paper. And the new preparation process is easy and reliable and can save time of researchers. Here, we will elaborate the preparation process and how the system works. In all, we will open up a new road in the field of preparation of STM tips.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

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