Area-selective Cu Film Growth on TiN and SiO2 by Supercritical Fluid Deposition

2020 ◽  
Vol 140 (1) ◽  
pp. 31-36 ◽  
Author(s):  
Naoto Usami ◽  
Etsuko Ota ◽  
Akio Higo ◽  
Takeshi Momose ◽  
Yoshio Mita
Keyword(s):  
Supercritical Fluid ◽  
Film Growth ◽  
Cu Film

Ru Passivated and Ru Doped e-TaN surfaces as Combined Barrier and Liner Material for Copper Interconnects: A First Principles Study

2018 ◽  
Author(s):  
Suresh Natarajan ◽  
Cara-Lena Nies ◽  
Michael Nolan
Keyword(s):  
First Principles ◽  
Film Growth ◽  
Early Stage ◽  
Copper Interconnects ◽  
Liner Material ◽  
Critical Dimensions ◽  
Industry Standard ◽  
Cu Film ◽  
Improved Performance ◽  
And Diffusion

<div>As the critical dimensions of transistors continue to be scaled down to facilitate improved performance and device speeds, new ultrathin materials that combine diffusion barrier and seed/liner properties are needed for copper interconnects at these length scales. Ideally, to facilitate coating of high aspect ratio structures, this alternative barrier+liner material should only consist of one or as few layers as possible. We studied TaN, the current industry standard for Cu diffusion barriers, and Ru, which is a</div><div>suitable liner material for Cu electroplating, to explore how combining these two materials in a barrier+liner material influences the adsorption of Cu atoms in the early stage of Cu film growth. To this end, we carried out first-principles simulations of the adsorption and diffusion of Cu adatoms at Ru-passivated and Ru-doped e-TaN(1 1 0) surfaces. For comparison, we also studied the behaviour of Cu and Ru adatoms at the low index surfaces of e-TaN, as well as the interaction of Cu adatoms with the (0 0 1) surface of hexagonal Ru. Our results confirm the barrier and liner properties of TaN and Ru, respectively while also highlighting the weaknesses of both materials. Ru passivated TaN was found to have improved binding with Cu adatoms as compared to the bare TaN and Ru surfaces.</div><div>On the other hand, the energetic barrier for Cu diffusion at Ru passivated TaN surface was lower than at the bare TaN surface which can promote Cu agglomeration. For Ru-doped TaN however, a decrease in Cu binding energy was found in addition to favourable migration of the Cu adatoms toward the doped Ru atom and unfavourable migration away from it or into the bulk. This suggests that Ru doping sites in the TaN surface can act as nucleation points for Cu growth with high migration barrier preventing agglomeration and allow electroplating of Cu. Therefore Ru-doped TaN is proposed as a candidate for a combined barrier+liner material with reduced thickness.</div>

Ru Passivated and Ru Doped e-TaN surfaces as Combined Barrier and Liner Material for Copper Interconnects: A First Principles Study

2018 ◽  
Author(s):  
Suresh Natarajan ◽  
Cara-Lena Nies ◽  
Michael Nolan
Keyword(s):  
First Principles ◽  
Film Growth ◽  
Early Stage ◽  
Copper Interconnects ◽  
Liner Material ◽  
Critical Dimensions ◽  
Industry Standard ◽  
Cu Film ◽  
Improved Performance ◽  
And Diffusion

<div>As the critical dimensions of transistors continue to be scaled down to facilitate improved performance and device speeds, new ultrathin materials that combine diffusion barrier and seed/liner properties are needed for copper interconnects at these length scales. Ideally, to facilitate coating of high aspect ratio structures, this alternative barrier+liner material should only consist of one or as few layers as possible. We studied TaN, the current industry standard for Cu diffusion barriers, and Ru, which is a</div><div>suitable liner material for Cu electroplating, to explore how combining these two materials in a barrier+liner material influences the adsorption of Cu atoms in the early stage of Cu film growth. To this end, we carried out first-principles simulations of the adsorption and diffusion of Cu adatoms at Ru-passivated and Ru-doped e-TaN(1 1 0) surfaces. For comparison, we also studied the behaviour of Cu and Ru adatoms at the low index surfaces of e-TaN, as well as the interaction of Cu adatoms with the (0 0 1) surface of hexagonal Ru. Our results confirm the barrier and liner properties of TaN and Ru, respectively while also highlighting the weaknesses of both materials. Ru passivated TaN was found to have improved binding with Cu adatoms as compared to the bare TaN and Ru surfaces.</div><div>On the other hand, the energetic barrier for Cu diffusion at Ru passivated TaN surface was lower than at the bare TaN surface which can promote Cu agglomeration. For Ru-doped TaN however, a decrease in Cu binding energy was found in addition to favourable migration of the Cu adatoms toward the doped Ru atom and unfavourable migration away from it or into the bulk. This suggests that Ru doping sites in the TaN surface can act as nucleation points for Cu growth with high migration barrier preventing agglomeration and allow electroplating of Cu. Therefore Ru-doped TaN is proposed as a candidate for a combined barrier+liner material with reduced thickness.</div>

Cu Film Growth on a Si(111) Surface Studied by Scanning Tunneling Microscopy

1996 ◽  
Vol 35 (Part 1, No. 6B) ◽  
pp. 3730-3733 ◽  
Author(s):  
Satoshi Tomimatsu ◽  
Tsuyoshi Hasegawa ◽  
Makiko Kohno ◽  
Shigeyuki Hosoki
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Film Growth ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cu Film

Effect of Iodine and Cobalt on MOCVD Cu Film Growth

2003 ◽  
Vol 6 (10) ◽  
pp. C141 ◽  
Author(s):  
Y. K. Ko ◽  
B. S. Seo ◽  
D. S. Park ◽  
H. J. Yang ◽  
W. H. Lee ◽  
...  
Keyword(s):  
Film Growth ◽  
Cu Film

Novel Reducing Chemistry for Supercritical Fluid Deposition of Copper

2006 ◽  
Vol 914 ◽  
Author(s):  
Takeshi Momose ◽  
Tomohiro Ohkubo ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki
Keyword(s):  
Solvent Effect ◽  
Supercritical Fluid ◽  
Catalytic Effect ◽  
Reducing Agent ◽  
Film Deposition ◽  
Si Substrate ◽  
Cu Film

AbstractWe study new deposition chemistry in Cu-SCFD (supercritical fluid deposition), especially effect of acetone is investigated as reducing agent and additives into H2 reducing Cu-SCFD. Acetone reduction yields Cu film deposition onto Ru coated Si substrate, because Ru has catalytic effect to generate reducing agent from acetone. When acetone is added into H2 reducing chemistry, the solubility of precursor is enhanced approximately 50 %, which is so-called “entrainer effect”. Ethanol can enhance the deposition of Cu in H2 reduction chemistry, which is a solvent effect. Two effects of entrainer effect by acetone and solvent effect by ethanol works independently, without interfering each other.

Nickel-catalyzed deposition of Cu film on PET fabric with supercritical fluid

2017 ◽  
Vol 28 (22) ◽  
pp. 16618-16626 ◽  
Author(s):  
Ronghui Guo ◽  
Xiaoli Jing ◽  
Linghui Peng ◽  
Jianwu Lan ◽  
Shouxiang Jiang ◽  
...  
Keyword(s):  
Supercritical Fluid ◽  
Pet Fabric ◽  
Cu Film

scholarly journals Influence of Pretreatment on Adhesion Quality of Supercritical-fluid-deposited Cu Film on Si

2019 ◽  
Vol 31 (8) ◽  
pp. 2481 ◽  
Author(s):  
Naoto Usami ◽  
Etsuko Ota ◽  
Takeshi Momose ◽  
Akio Higo ◽  
Yoshio Mita
Keyword(s):  
Supercritical Fluid ◽  
Cu Film

Thin Film Growth and Ion-Beam Modification: Md Simulations Going Beyond Simple Systems

1999 ◽  
Vol 585 ◽  
Author(s):  
Edwin F. C. Haddeman ◽  
Bouke S. Bunnik ◽  
Barend J. Thijsse
Keyword(s):  
Film Growth ◽  
Ion Beam ◽  
Md Simulations ◽  
Cu Films ◽  
Ion Beam Modification ◽  
Cu Film ◽  
Strong Surface ◽  
Surface Patterns ◽  
Complex Phenomena ◽  
Simple Systems

AbstractMolecular Dynamics computer simulations were used to explore a number of complex phenomena that occur during film growth and ion-surface interactions. A few examples are discussed. (1) Strong surface patterns develop when a Mo film is grown on a Mo(110) substrate, whereas they are absent for Mo on Mo(100). (2) Depositing a Mo film on a substrate containing two antiparallel (100)/(910) grain boundaries leads to complicated film morphologies in the grain boundary regions. Stresses, mosaic spread, and regions of fcc Mo are observed, and their stability is examined. (3) Cu films deposited on a Mo(110) substrate, a model system for interconnects in modern IC technology, are affected by the strong fcc/bcc interface mismatch. The Cu film properties are analyzed for thermally evaporated films and for films grown by argon ion-beam assisted deposition (IBAD).

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