High Temperature Hydrogenation Behavior of Bulk Titanium Aluminum Carbide

2014 ◽  
Vol 29 (8) ◽  
pp. 864
Author(s):  
CHEN Chen ◽  
ZHANG Hai-Bin ◽  
PENG Shu-Min ◽  
ZHAO Lin-Jie ◽  
ZHU Jian-Guo
2008 ◽  
Vol 62 (10-11) ◽  
pp. 1480-1483 ◽  
Author(s):  
Shinobu Hashimoto ◽  
Masaru Takeuchi ◽  
Koji Inoue ◽  
Sawao Honda ◽  
Hideo Awaji ◽  
...  

2016 ◽  
Vol 42 (13) ◽  
pp. 14984-14991 ◽  
Author(s):  
Xiaochen Huang ◽  
Yi Feng ◽  
Gang Qian ◽  
Yang Wang ◽  
Xuebin Zhang

2011 ◽  
Vol 94 (10) ◽  
pp. 3460-3466 ◽  
Author(s):  
Haibin Zhang ◽  
Volker Presser ◽  
Klaus Georg Nickel ◽  
Christoph Berthold ◽  
Yanchun Zhou

2021 ◽  
pp. 152916
Author(s):  
Asif Shahzad ◽  
Jae-Min Oh ◽  
Kashif Rasool ◽  
Jiseon Jang ◽  
Bolam Kim ◽  
...  

2006 ◽  
Vol 0 (0) ◽  
pp. 060623005134003-??? ◽  
Author(s):  
Zhijun Lin ◽  
Mujin Zhuo ◽  
Yanchun Zhou ◽  
Meishuan Li ◽  
Jingyang Wang

2021 ◽  
Author(s):  
Qiong Wu ◽  
Yihao Wang ◽  
Pengfei Li ◽  
Shunhua Chen ◽  
Fufa Wu

The electrochemical properties of MXene titanium carbide Ti3C2, which has received much attention in the application of electrode materials for supercapacitors, are affected by the different morphology of its precursor....


2012 ◽  
Vol 510 ◽  
pp. 645-649
Author(s):  
Ping Wang

Ternary titanium aluminum carbide powder was prepared by pressureless sintering at different temperature using elemental powder mixture of Ti, Al, and active carbon whose molar ratios was 3Ti/1.1Al/1.8C and effects of doping Si were discussed from 3.0Ti/1.0Al/0.1Si/1.8C and 3.0Ti/0.9Al/0.2S/1.8C. X-ray diffractions (XRD) patterns were used to detect the phase composition and scanning electron microscope (SEM) patterns were observed to investigate the microstructure of samples respectively. Results showed that Ti2AlC and Ti3AlC2which had obvious layered structure were synthesized by pressureless sintering of 3Ti/1.1Al/1.8C at 1300°C-1500°C. However, the samples doping Si were made of Ti2AlC, Ti3AlC2and Ti3SiC2. When the amount of Si-doped increased and Al/Si decreased, the amount of Ti3AlC2and Ti3SiC2went up with Ti2AlC going down. Interestingly, the character of layered structure became unconspicuous at same temperature. Moreover, the mechanism that doping Si was not helpful to form Ti2AlC but Ti3AlC2was explained.


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