Synthesis of Ti3C2 Mxene through In Situ HF and Direct HF Etching Procedures as Electrolyte Fillers in Dye-Sensitized Solar Cell

MXene is the new family of two-dimensional (2D) transition metal carbides, carbonitrides and nitrides discovered in 2011. The unique properties of 2D MXene such as excellent mechanical properties, hydrophilic surfaces and metallic conductivity made it interesting for application in electrodes of rechargeable batteries, supercapacitors, photocatalysts, catalysts, transparent conducting films, and flexible high-strength composites. The MXene can be synthesized through a selective etching process by using either in-situ HF (hydrofluoric acid) or direct HF methods. This study reports on the effect of the in-situ HF and direct HF etching procedures on the morphology of the synthesis Ti2C3 MXene using titanium aluminum carbide (Ti2AlC3) as precursor. The morphology and elements presence were evaluated by using variable pressure field emission scanning electron microscope (FESEM) and energy dispersion X-ray (EDX) spectroscopy analyses, respectively. The analysis shows that the MXene synthesized through the direct HF method was successfully delaminated compared to the in-situ HF procedures.

MXene titanium carbide synthesized by hexagonal titanium aluminum carbide with high specific capacitance and low impedance

The electrochemical properties of MXene titanium carbide Ti3C2, which has received much attention in the application of electrode materials for supercapacitors, are affected by the different morphology of its precursor....

Effects of Doping Si on the Preparation of Ternary Titanium Aluminum Carbide Powder by Pressureless Sintering

Ternary titanium aluminum carbide powder was prepared by pressureless sintering at different temperature using elemental powder mixture of Ti, Al, and active carbon whose molar ratios was 3Ti/1.1Al/1.8C and effects of doping Si were discussed from 3.0Ti/1.0Al/0.1Si/1.8C and 3.0Ti/0.9Al/0.2S/1.8C. X-ray diffractions (XRD) patterns were used to detect the phase composition and scanning electron microscope (SEM) patterns were observed to investigate the microstructure of samples respectively. Results showed that Ti2AlC and Ti3AlC2which had obvious layered structure were synthesized by pressureless sintering of 3Ti/1.1Al/1.8C at 1300°C-1500°C. However, the samples doping Si were made of Ti2AlC, Ti3AlC2and Ti3SiC2. When the amount of Si-doped increased and Al/Si decreased, the amount of Ti3AlC2and Ti3SiC2went up with Ti2AlC going down. Interestingly, the character of layered structure became unconspicuous at same temperature. Moreover, the mechanism that doping Si was not helpful to form Ti2AlC but Ti3AlC2was explained.