Single-trap kinetic in Si nanowire FETs: effect of gamma radiation treatment

MRS Advances ◽  
2016 ◽  
Vol 1 (56) ◽  
pp. 3755-3760 ◽  
Author(s):  
I. Zadorozhnyi ◽  
J. Li ◽  
S. Pud ◽  
M. Petrychuk ◽  
S. Vitusevich
Keyword(s):  
Gamma Radiation ◽  
Transport Properties ◽  
Radiation Treatment ◽  
Coupling Effect ◽  
Si Nanowire ◽  
Noise Spectroscopy ◽  
Device Structures ◽  
Small Doses ◽  
Effect Transistor

ABSTRACTHere we report on the effect of gamma radiation treatment on transport properties and single-trap kinetics in Si nanowire (NW) field effect transistor (FET) structures. We used noise spectroscopy as a powerful method for advanced physical characterization of nanoscale devices. Our results demonstrate that transport properties of NW FETs can be changed using small doses of gamma radiation treatment. We reveal an enhancement of the gate coupling effect, which is explained as a result of the reorganization of the native defect structure after treatment. The radiation treatment approach allows the single-trap dynamic to be changed, which opens up prospects for a number of fundamental studies and applications of Si NW FET device structures, including biosensors.

Transport properties characterization of individual molecule device using noise spectroscopy: A new approach

2013 ◽  
Author(s):  
Anton Vladyka ◽  
Viktor Sydoruk ◽  
Svetlana Vitusevich ◽  
Mykhailo Petrychuk ◽  
Dong Xiang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Individual Molecule ◽  
New Approach ◽  
Noise Spectroscopy ◽  
Properties Characterization

Characterization of Gate-All-Around Si-Nanowire Field-Effect Transistor

2017 ◽  
pp. 737-748
Author(s):  
Yoon-Ha Jeong ◽  
Sang-Hyun Lee ◽  
Ye-Ram Kim ◽  
Rock-Hyun Baek ◽  
Dong-Won Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Si Nanowire ◽  
Effect Transistor

Advanced performance and scalability of Si nanowire field-effect transistors analyzed using noise spectroscopy and gamma radiation techniques

2013 ◽  
Vol 114 (20) ◽  
pp. 203704 ◽  
Author(s):  
J. Li ◽  
S. A. Vitusevich ◽  
M. V. Petrychuk ◽  
S. Pud ◽  
A. Offenhäusser ◽  
...  
Keyword(s):  
Gamma Radiation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Si Nanowire ◽  
Noise Spectroscopy

scholarly journals Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling

2021 ◽  
Vol 11 (1) ◽  
pp. 780
Author(s):  
Firas Natheer Abdul-Kadir ◽  
Yasir Hashim ◽  
Muhammad Nazmus Shakib ◽  
Faris Hassan Taha
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Drain Current ◽  
Oxide Thickness ◽  
Si Nanowire ◽  
Effect Transistor ◽  
Current Characteristics

This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.

Transport and noise properties of Si nanowire channels with different lengths before and after gamma radiation treatment

2013 ◽  
Author(s):  
Jing Li ◽  
Svetlana Vitusevich ◽  
Mykhailo Petrychuk ◽  
Sergii Pud ◽  
Viktor Sydoruk ◽  
...  
Keyword(s):  
Gamma Radiation ◽  
Radiation Treatment ◽  
Si Nanowire ◽  
Before And After

scholarly journals Transport properties of single-walled carbon nanotube transistors after gamma radiation treatment

2010 ◽  
Vol 107 (6) ◽  
pp. 063701 ◽  
Author(s):  
S. A. Vitusevich ◽  
V. A. Sydoruk ◽  
M. V. Petrychuk ◽  
B. A. Danilchenko ◽  
N. Klein ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Gamma Radiation ◽  
Transport Properties ◽  
Radiation Treatment ◽  
Single Walled Carbon Nanotube ◽  
Carbon Nanotube Transistors ◽  
Single Walled Carbon ◽  
Nanotube Transistors

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

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