Conformality of PVD shell layers on vertical arrays of rods with different aspect ratios investigated by Monte Carlo simulations

MRS Advances ◽  
2017 ◽  
Vol 2 (8) ◽  
pp. 465-470 ◽  
Author(s):  
M. Yurukcu ◽  
H. Cansizoglu ◽  
M. F. Cansizoglu ◽  
T. Karabacak

AbstractApplications such as batteries, fuel cells, solar cells, and sensors, can benefit from high surface-to-volume ratio core/shell arrays of nanorods. The fabrication of the conformal shell layers on nanorod arrays has been a formidable task. In order to assess the deposition conditions for the production of conformal shell coatings by physical vapor deposition (PVD) techniques, we employed Monte Carlo (MC) simulations that involved shell depositions under different flux distributions and angles on arrays of rods. We investigated the conformality of PVD shell layers on nanorod arrays of different aspect ratios, which is defined to be the ratio of rod height to the gaps between nearest-neighbor rods. MC simulated core/shell structures were analyzed for the thickness uniformity of the shell layer across the sidewalls of rods. Our results show that a small angle deposition approach involving a uniform oblique flux (U-SAD) with a small incidence angle ≤ 30o can generate a fairly conformal shell coating around small aspect-ratio rods. However, normal angle deposition with an angular flux distribution (A-NAD) achieves superior conformality both on small and high-aspect-ratio structures compared to U-SAD, conventional uniform normal angle deposition (U-NAD), and SAD with an angular flux distribution (A-SAD). A-NAD can be realized in a PVD system such as by high pressure sputter deposition; while U-SAD can be achieved in thermal evaporation system with a small angle incident flux. In addition, U-NAD and A-SAD can correspond to film growth by normal incidence thermal evaporation and SAD-high pressure sputter deposition, respectively.

MRS Advances ◽  
2020 ◽  
Vol 5 (43) ◽  
pp. 2241-2248
Author(s):  
Mesut Yurukcu ◽  
Fatma M. Yurtsever ◽  
Serkan Demirel ◽  
Tansel Karabacak

AbstractThe quality of the shell coating around nanorods is critical in device applications. Conventional physical vapor deposition (PVD) techniques can be utilized for highly conformal shell coating formation in core-shell structure devices. To identify scalable fabrication techniques for conformal shell coatings, Monte Carlo (MC) simulations of PVD growth were performed under different atomic flux distributions and angles on arrays of glancing angle deposition (GLAD) nanorods, which were also generated by MC simulations. We investigated the conformality of PVD films (shell) around GLAD rod arrays (core) and analyzed the thickness uniformity of the shell layer across the sidewalls of rods. Our results show that Angular Flux-Normal Angle (A-NAD), which might correspond to high-pressure sputter deposition at normal incidence (HIPS at θ = 0o) can generate better conformal shell coating compared to others. In Uniform Flux-Normal Angle technique (U-NAD), which corresponds to a thermal evaporation deposition, the growth suffers from poor sidewall coverage. In addition, introducing a small angle to the flux also improves the shell conformality. Therefore, high-pressure sputter deposition technique is expected to provide superior conformality for a catalyst or semiconductor coating around base nanorods, for example for fuel cell and solar cell applications, with the help of obliquely incident atoms of the HIPS flux.


2019 ◽  
Vol 19 (11) ◽  
pp. 1233-1237 ◽  
Author(s):  
Gyeongho Hyun ◽  
Sungmoon Kim ◽  
Jonginn Im ◽  
Younghyuck Na ◽  
Kwangho Jeong ◽  
...  

MRS Advances ◽  
2016 ◽  
Vol 1 (28) ◽  
pp. 2045-2050 ◽  
Author(s):  
Filiz Keles ◽  
Hilal Cansizoglu ◽  
Matthew Brozak ◽  
Emad Badraddin ◽  
Tansel Karabacak

ABSTRACTWorking gas pressure during sputter deposition can significantly affect the conformality of a thin film when it is grown on a nanostructured surface. In this study, we fabricated core-shell nanostructured photodetectors, where n-type In2S3 nanorod arrays (core) were coated with p-type CuInS2 (CIS) films (shell) at relatively low and high Ar gas pressures. In2S3 nanorods were prepared by glancing angle deposition (GLAD) technique using a thermal evaporator unit. CIS films were deposited by RF sputtering at Ar pressures of 2.7x10-2 mbar (high pressure sputtering, HIPS) and 7.3x10-3 mbar (low pressure sputtering, LPS). The morphological characterization was carried out by means of SEM. The photocurrent measurement was conducted under 1.5 AM Sun under no bias. Nanostructured photodetectors of HIPS-CIS/GLAD-In2S3 (i.e. HIPS-GLAD) were shown to demonstrate enhanced photoresponse with a photocurrent value of 98 μA, which is about ∼230% higher than that of LPS-GLAD devices. The enhancement originates from the improved core-shell structure achieved by more conformal coating of the CIS shell. In addition, the results were compared to their counterpart thin-film devices incorporating an In2S3 film coated either with HIPS or LPS CIS layer. Nanorod devices with high and low pressure CIS films showed photocurrent values ∼20 times and ∼ 19 times higher compared to those of high and low pressure film devices, respectively. This finding can be explained by the higher light absorption property of nanorods, and the reduced inter-electrode distance as a result of core-shell structure, which allows the effective capture of the photo-generated carriers. Therefore, the results of this work can pave way to the development of high photoresponse core-shell semiconductor devices fabricated by physical vapor deposition techniques.


2021 ◽  
Vol 35 ◽  
pp. 102319
Author(s):  
Tao Wang ◽  
Weibing Ma ◽  
Yuxin Zhang ◽  
Jingdong Guo ◽  
Tingting Li ◽  
...  

1998 ◽  
Vol 120 (2) ◽  
pp. 296-302 ◽  
Author(s):  
Masato Ikegawa ◽  
Jun’ichi Kobayashi ◽  
Morihisa Maruko

As integrated circuits are advancing toward smaller device features, step-coverage in submicron trenches and holes in thin film deposition are becoming of concern. Deposition consists of gas flow in the vapor phase and film growth in the solid phase. A deposition profile simulator using the direct simulation Monte Carlo method has been developed to investigate deposition profile characteristics on small trenches which have nearly the same dimension as the mean free path of molecules. This simulator can be applied to several deposition processes such as sputter deposition, and atmospheric- or low-pressure chemical vapor deposition. In the case of low-pressure processes such as sputter deposition, upstream boundary conditions of the trenches can be calculated by means of rarefied gas flow analysis in the reactor. The effects of upstream boundary conditions, molecular collisions, sticking coefficients, and surface migration on deposition profiles in the trenches were clarified.


Author(s):  
Zeyuan Hu ◽  
Yidong Miao ◽  
Xiaolan Xue ◽  
Bin Xiao ◽  
Jiqiu Qi ◽  
...  

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