Evidence for a nucleation barrier in the amorphous phase formation by solid-state reaction of Ni and single-crystal Zr

The glass-forming ability of the three alloy systems Co–Zr, Cu–Zr, and Ni–Zr has been analyzed for three distinct production routes: (1) liquid quenching, (2) vapor deposition, and (3) solidstate reaction. Using the free energy and heats of formation curves obtained from the thermodynamic characterization of the respective alloy systems, a satisfactory rationale can be obtained for amorphous phase formation by all three routes. The analysis shows that while amorphous phase formation by quenching from the high-temperature liquid is clearly dependent on factors such as quench rate and the value TG/TM, it is the low-temperature stability of the amorphous phase relative to the other crystalline structures that enables amorphous phases to be formed by both vapor deposition and solid-state reaction. The underlying free energy curves indicate the interesting possibility of a supersaturation sequence in the nucleation of an amorphous phase by solid-state reaction. The principles underlying thermodynamic characterizations are briefly discussed, and a characterization for Co–Zr is presented.

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AMORPHOUS PHASE FORMATION OF Ni/Ti BILAYER SYSTEM BY SOLID STATE REACTION AND ION BEAM MIXING

Acta Physica Sinica ◽

10.7498/aps.39.101-2 ◽

1990 ◽

Vol 39 (7) ◽

pp. 101

Author(s):

LIU WEN-HONG ◽

ZHU DE-ZHANG ◽

WANG ZHEN-XIA ◽

LIU XIANG-HUAI

Keyword(s):

Solid State ◽

Amorphous Phase ◽

Phase Formation ◽

Solid State Reaction ◽

Ion Beam ◽

Ion Beam Mixing ◽

Bilayer System ◽

Amorphous Phase Formation

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Amorphous phase formation in Ti/Ni bilayer thin films by solid-state diffusion

Journal of Materials Science Letters ◽

10.1007/bf00720198 ◽

1989 ◽

Vol 8 (12) ◽

pp. 1393-1394 ◽

Cited By ~ 13

Author(s):

Masahiro Kitada ◽

Noboru Shimizu ◽

Teruho Shimotsu

Keyword(s):

Thin Films ◽

Solid State ◽

Amorphous Phase ◽

Phase Formation ◽

Solid State Diffusion ◽

State Diffusion ◽

Amorphous Phase Formation

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Amorphous-phase formation and initial reactions at Pt/GaAs interfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088609 ◽

1991 ◽

Vol 49 ◽

pp. 858-859

Author(s):

Dae-Hong Ko ◽

Robert Sinclair

Keyword(s):

Solid State ◽

Amorphous Phase ◽

Phase Formation ◽

Compound Semiconductor ◽

Metal Compound ◽

Heat Of Mixing ◽

Semiconductor Interface ◽

Direct Demonstration ◽

State Amorphization ◽

Amorphous Phase Formation

It is now well known that many metals form a l-2nm amorphous interdiffused layer when deposited onto clean Si surface, which grows upon annealing in some systems but crystallizes into stable, or metastable, phases in others. Such behavior can be interpreted in terms of a solid-state amorphization, driven by a negative heat of mixing of the elements with the amorphous phase produced for kinetic reasons. Some metal/compound semiconductor systems also show the same reaction behavior. Though there have been some reports, using electron diffraction, on the amorphous phase formation at metal-compound semiconductor interface upon low temperature annealing, because the expected thickness might only be several atomic layers, it is clear that high resolution transmission electron microscopy (HRTEM) is the most powerful technique to study such a phase. This article reports on the amorphous phase formation and the initial stages of reaction occuring at Pt/GaAs interfaces upon annealing with HRTEM, and this is the most direct demonstration of solid state amorphization of a metal with a compound semiconductor.

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