Analysis of the NdBa2Cu3Ox thin film growth mechanism by time of flight mass spectrometry of the laser plume

Time of flight (TOF) spectroscopic measurements are used to diagnose the laser-generated plume of ceramic NdBa2Cu3Ox targets. We have been able to directly correlate the laser-deposited films' properties such as superconductivity, crystallinity, and orientation with plasma properties. Study of the TOF spectra shows that at laser fluences greater than 3 J/cm2 the plume become Nd-rich, and this leads to a low Tc in the deposited film. We have also shown the effect of target density on the energy of the plume species, and through energy considerations we have explained the observed change in the crystalline orientation of films from c- to a-orientation with increasing the target density. Finally, we have examined the oxidation mechanism of NdBa2Cu3Ox thin films, and have shown that highly energetic atomic oxygens have a prevailing role in oxidizing our laser-deposited thin films.

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Rapid, semi-quantitative depth profiling of ultra-thin films using plasma profiling time-of-flight mass spectrometry

2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) ◽

10.23919/mipro.2017.7966592 ◽

2017 ◽

Author(s):

Yann Mazel ◽

Jean-Paul Barnes ◽

Emmanuel Nolot ◽

Agnes Tempez ◽

Sebastien Legendre

Keyword(s):

Mass Spectrometry ◽

Thin Films ◽

Time Of Flight ◽

Depth Profiling ◽

Flight Mass Spectrometry

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Rapid, semi-quantitative depth profiling of ultra-thin films using plasma profiling time-of-flight mass spectrometry: AM: Advanced metrology

2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) ◽

10.1109/asmc.2017.7969245 ◽

2017 ◽

Cited By ~ 1

Author(s):

Yann Mazel ◽

Jean-Paul Barnes ◽

Emmanuel Nolot ◽

Agnes Tempez ◽

Sebastien Legendre

Keyword(s):

Mass Spectrometry ◽

Thin Films ◽

Time Of Flight ◽

Depth Profiling ◽

Flight Mass Spectrometry

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Laser Ablation Generation of Bismuth Selenide Clusters from Mixtures of Elements, Crystalline Bi2Se3, or Thin Films: Laser Desorption Ionization (LDI) and Surface Assisted LDI Time-of-Flight Mass Spectrometry using Graphene and Nanodiamonds

Journal of the American Society for Mass Spectrometry ◽

10.1021/jasms.9b00060 ◽

2019 ◽

Vol 31 (1) ◽

pp. 66-72

Author(s):

Govinda Mandal ◽

Ravi Madhukar Mawale ◽

Jan Gutwirth ◽

Petr Němec ◽

Josef Havel

Keyword(s):

Mass Spectrometry ◽

Thin Films ◽

Laser Ablation ◽

Time Of Flight ◽

Laser Desorption ◽

Bismuth Selenide ◽

Laser Desorption Ionization ◽

Desorption Ionization ◽

Flight Mass Spectrometry

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Excitation and quenching mechanisms in the near-UV photodissociation of CH3Br and CH3Cl adsorbed on D2O or CH3OH on Cu(110)

Physical Chemistry Chemical Physics ◽

10.1039/c4cp06128d ◽

2015 ◽

Vol 17 (14) ◽

pp. 9173-9185 ◽

Cited By ~ 2

Author(s):

E. T. Jensen

Keyword(s):

Mass Spectrometry ◽

Thin Films ◽

Time Of Flight ◽

Photochemical Processes ◽

Flight Mass Spectrometry ◽

Quenching Mechanisms ◽

193 Nm

Photochemical processes for CH3X (X = Cl, Br, I) adsorbed on top of thin films of D2O or CH3OH on a Cu(110) substrate is studied by time-of-flight mass spectrometry for a range of UV wavelengths (351–193 nm).

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Influence of the hydrogen contained in amorphous silicon thin films on a pulsed radiofrequency argon glow discharge coupled to time of flight mass spectrometry. Comparison with the addition of hydrogen as discharge gas

Journal of Analytical Atomic Spectrometry ◽

10.1039/c1ja10235d ◽

2012 ◽

Vol 27 (1) ◽

pp. 71-79 ◽

Cited By ~ 8

Author(s):

Pascal Sánchez ◽

Deborah Alberts ◽

Beatriz Fernández ◽

Armando Menéndez ◽

Rosario Pereiro ◽

...

Keyword(s):

Mass Spectrometry ◽

Thin Films ◽

Glow Discharge ◽

Amorphous Silicon ◽

Time Of Flight ◽

Pulsed Radiofrequency ◽

Silicon Thin Films ◽

Flight Mass Spectrometry ◽

Discharge Gas

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Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study

Scientific Reports ◽

10.1038/s41598-019-55773-9 ◽

2019 ◽

Vol 9 (1) ◽

Cited By ~ 1

Author(s):

Ravi Mawale ◽

Govinda Mandal ◽

Marek Bouška ◽

Jan Gutwirth ◽

Pankaj Lochan Bora ◽

...

Keyword(s):

Mass Spectrometry ◽

Thin Films ◽

Laser Ablation ◽

Density Functional ◽

Structural Information ◽

Time Of Flight ◽

Mass Spectrometry Analysis ◽

Individual Species ◽

Ablation Time ◽

Flight Mass Spectrometry

AbstractThe Ge-Bi-Se thin films of varied compositions (Ge content 0–32.1 at. %, Bi content 0–45.7 at. %, Se content 54.3–67.9 at. %) have been prepared by rf magnetron (co)-sputtering technique. The present study was undertaken in order to investigate the clusters generated during the interaction of laser pulses with Ge-Bi-Se thin films using laser ablation time-of-flight mass spectrometry. The stoichiometry of the clusters was determined in order to understand the individual species present in the plasma plume. Laser ablation of Ge-Bi-Se thin films accompanied by ionization produces about 20 positively and/or negatively charged unary, binary and ternary (Gex+, Biy+, Sez+/−, GexSez+/−, BiySez+/− and GexBiySez−) clusters. Furthermore, we performed the laser ablation experiments of Ge:Bi:Se elemental mixtures and the results were compared with laser ablation time-of-flight mass spectrometry analysis of thin films. Moreover, to understand the geometry of the generated clusters, we calculated structures of some selected binary and ternary clusters using density functional theory. The generated clusters and their calculated possible geometries can give important structural information, as well as help to understand the processes present in the plasma processes exploited for thin films deposition.

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