Study of the growth mechanism of highly in-plane aligned α-axis YBa2Cu3O7−x thin films on LaSrGaO4 substrate by high resolution electron microscopy

1996 ◽  
Vol 11 (12) ◽  
pp. 2951-2954 ◽  
Author(s):  
J. G. Wen ◽  
S. Mahajan ◽  
H. Ohtsuka ◽  
T. Morishita ◽  
N. Koshizuka
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Plan View ◽  
Oriented Film ◽  
Resolution Electron ◽  
Average Size

Highly in-plane aligned α-axis YBa2Cu3O7−x thin films deposited on (100) LaSrGaO4 substrates by a self-template method were studied by high-resolution electron microscopy along three orthogonal 〈100〉 axes of the substrate. Plan-view images confirm that the majority of the film preferentially aligns across the entire substrate except for very few misaligned domains with average size 10 nm2. Cross-sectional images along the [100] orientation of YBa2Cu3O7−x reveal that in-plane aligned α-axis YBa2Cu3O7−x is grown on a template layer dominated by c-axis oriented film. This strongly suggests that the in-plane alignment of α-axis YBa2Cu3O7−x thin films on (100) LaSrGaO4 substrates is governed by the different stresses along the b and c axes of the substrate. Cross-sectional images along [001] of the YBa2Cu3O7—x thin film reveal that the 90° domains easily nucleate in the region between α-axis YBa2Cu3O7—x and the YBa4Cu3Ox phase. Cracks along the (001) plane of YBa2Cu3O7−x are found to be due to the large mismatch between the c parameters of the thin film and substrate.

A HREM study of V/Al2O3 interface

1992 ◽  
Vol 50 (1) ◽  
pp. 146-147
Author(s):  
Y. Ikuhara ◽  
P. Pirouz ◽  
A. H. Heuer ◽  
S. Yadavalli ◽  
C. P. Flynn
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
High Resolution ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Interface Structure ◽  
Cross Sectional ◽  
Plan View ◽  
Resolution Electron

The interface structure between vanadium and the R-plane of sapphire (α-Al2O3) was studied by conventional and cross-sectional high resolution electron microscopy (HREM) to clarify the atomic structure of the interface.A 57 nm thick vanadium film was deposited on the (1102) (R) plane of sapphire by molecular beam epitaxy (MBE) at a substrate temperature of 920 K in a vacuum of 10-10torr. The HREM observations of the interface were done from three directions: two cross-sectional views (parallel to [0221]Al2O3 and [1120]Al2O3) and a plan view (parallel to [2201]Al2O3) by a top-entry JEOL 4000EX electron microscope (400 kV).

Morphology of Vapor Evaporated Mo Thin Films

1991 ◽  
Vol 222 ◽  
Author(s):  
Y. Cheng ◽  
M. B. Stearns
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Large Angle ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
X Ray ◽  
X Ray Scattering ◽  
Resolution Electron ◽  
Deposition Angle

ABSTRACTStudies were made of the dependence of the morphology of Mo films, prepared by ebeam evaporation in an UHV system, on the substrate temperature and deposition angle. The main characterization techniques used were large angle x-ray scattering and cross-sectional high resolution electron microscopy.

High Resolution Electron Microscopy (HREM) Study of Chemically Vapor Deposited Polycrystalline Si1-xGex Thin Films

2000 ◽  
Vol 609 ◽  
Author(s):  
W. Qin ◽  
D. G. Ast ◽  
T. I. Kamins
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Repeat Unit ◽  
High Resolution Electron Microscopy ◽  
Second Order ◽  
Plan View ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Polysilicon Films

ABSTRACTThe microstructure of polysilicon and Si0.69Ge0.31 thin films, grown by chemical-vapordeposition (CVD) on oxidized silicon wafers covered with a very thin polysilicon seed layer, was investigated using high-resolution electron microscopy (HREM). The plan-view HREM images showed that polysilicon films contained less substructure inside grains and had fewer multiple twins and more extended twin bands than Si0.69Ge0.31. On the other hand, only SiGe contained multiple twins with five-fold symmetry. The atomic model of the second-order symmetric twin boundary proposed for Si and based on the insertion of five-member and seven-membered rings was found to describe the atomic structures of second-order symmetric twin boundaries in Si0.69Ge0.31 as well. Within the accuracy of HREM, the repeat unit of the boundary was the same in Si0.69Ge0.31 and Si.

Cross-sectional time-resolved high-resolution electron microscopy of epitaxial growth of Au on MgO

1996 ◽  
Vol 54 ◽  
pp. 982-983
Author(s):  
T. Kizuka ◽  
N. Tanaka
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Epitaxial Growth ◽  
High Resolution Electron Microscopy ◽  
Vacuum Deposition ◽  
Cross Sectional ◽  
Time Resolved ◽  
Plan View ◽  
Resolution Electron

Vapor phase epitaxial growth techniques are indispensable for production of thin film electric devices. Various structural analyses have been attempted to evaluate the epitaxial growth. Conventional transmission electron microscopy (CTEM) is a most useful method. In particular, it is known that a plan-view time-resolved CTEM of in-situ vacuum-deposition in a microscope can analyze each process of epitaxial growth. The nucleation in vacuum-deposition was also in-situ observed by a time-resolved high resolution electron microscopy (TRHREM). However many unresolved problems still remain in the studies of the epitaxial growth because it is difficult to observe the epitaxial interfaces less than a few nanometer under appropriate conditions. Much more advanced techniques are required for electron microscopy to obtain detailed information.In the present study, a TRHREM for the cross-sectional observation was developed to elucidate the epitaxial growth process in vacuum-deposition.Gold (Au) was vacuum-deposited on (001) surfaces of the magnesium oxide (MgO) substrates at room temperature in a specimen chamber of a 200-kV high-resolution electron microscope (JEOL, JEM2010).

Interfacial Atomic Structures During Cobalt Silicidation

1990 ◽  
Vol 202 ◽  
Author(s):  
A. Catana ◽  
P.E. Schmid
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Type B ◽  
Cross Sectional ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Predominant Orientation ◽  
Lower Temperature

ABSTRACTHigh Resolution Electron Microscopy (HREM) and image calculations are combined to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. The samples are prepared by UHV e-beam evaporation of Co layers (2 nm) followed by annealing at 300°C or 400°C. Cross-sectional observations at an atomic scale show that the silicidation of Co at the lower temperature yields epitaxial CoSi/Si domains such that [111]Si // [111]CoSi and <110>Si // <112>CoSi. At about 400°C CoSi2 nucleates at the CoSi/Si interface. During the early stages of this chemical reaction, an epitaxial CoSi/CoSi2/Si system is observed. The predominant orientation is such that (021) CoSi planes are parallel to (220) CoSi2 planes, the CoSi2/Si interface being of type B. The growth of CoSi2 is shown to proceed at the expense of both CoSi and Si.

scholarly journals High Resolution Electron Microscopy Characterization of (La0.5Sr0.5)2CoC4 Thin Film Cathode Materials

2014 ◽  
Vol 20 (S3) ◽  
pp. 1912-1913
Author(s):  
F. Yang ◽  
Y. Chen ◽  
Z. Cai ◽  
N. Tsvetkov ◽  
M. Burriel ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
High Resolution ◽  
Cathode Materials ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Microscopy Characterization
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