High Resolution Electron Microscopy (HREM) Study of Chemically Vapor Deposited Polycrystalline Si1-xGex Thin Films

ABSTRACTThe microstructure of polysilicon and Si0.69Ge0.31 thin films, grown by chemical-vapordeposition (CVD) on oxidized silicon wafers covered with a very thin polysilicon seed layer, was investigated using high-resolution electron microscopy (HREM). The plan-view HREM images showed that polysilicon films contained less substructure inside grains and had fewer multiple twins and more extended twin bands than Si0.69Ge0.31. On the other hand, only SiGe contained multiple twins with five-fold symmetry. The atomic model of the second-order symmetric twin boundary proposed for Si and based on the insertion of five-member and seven-membered rings was found to describe the atomic structures of second-order symmetric twin boundaries in Si0.69Ge0.31 as well. Within the accuracy of HREM, the repeat unit of the boundary was the same in Si0.69Ge0.31 and Si.

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Study of the growth mechanism of highly in-plane aligned α-axis YBa2Cu3O7−x thin films on LaSrGaO4 substrate by high resolution electron microscopy

Journal of Materials Research ◽

10.1557/jmr.1996.0372 ◽

1996 ◽

Vol 11 (12) ◽

pp. 2951-2954 ◽

Cited By ~ 1

Author(s):

J. G. Wen ◽

S. Mahajan ◽

H. Ohtsuka ◽

T. Morishita ◽

N. Koshizuka

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Thin Films ◽

High Resolution ◽

High Resolution Electron Microscopy ◽

Cross Sectional ◽

Plan View ◽

Oriented Film ◽

Resolution Electron ◽

Average Size

Highly in-plane aligned α-axis YBa2Cu3O7−x thin films deposited on (100) LaSrGaO4 substrates by a self-template method were studied by high-resolution electron microscopy along three orthogonal 〈100〉 axes of the substrate. Plan-view images confirm that the majority of the film preferentially aligns across the entire substrate except for very few misaligned domains with average size 10 nm2. Cross-sectional images along the [100] orientation of YBa2Cu3O7−x reveal that in-plane aligned α-axis YBa2Cu3O7−x is grown on a template layer dominated by c-axis oriented film. This strongly suggests that the in-plane alignment of α-axis YBa2Cu3O7−x thin films on (100) LaSrGaO4 substrates is governed by the different stresses along the b and c axes of the substrate. Cross-sectional images along [001] of the YBa2Cu3O7—x thin film reveal that the 90° domains easily nucleate in the region between α-axis YBa2Cu3O7—x and the YBa4Cu3Ox phase. Cracks along the (001) plane of YBa2Cu3O7−x are found to be due to the large mismatch between the c parameters of the thin film and substrate.

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High-resolution electron microscopy of microstructure of SrTiO3/BaZrO3 bilayer thin films on MgO substrates

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.12.026 ◽

2007 ◽

Vol 300 (2) ◽

pp. 478-482 ◽

Cited By ~ 18

Author(s):

S.B. Mi ◽

C.L. Jia ◽

M.I. Faley ◽

U. Poppe ◽

K. Urban

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

High Resolution ◽

High Resolution Electron Microscopy ◽

Resolution Electron

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Direct Analysis of Atomic Structures of Advanced Ceramics by High-Resolution Electron Microscopy.

Journal of the Ceramic Society of Japan ◽

10.2109/jcersj.109.1266_s17 ◽

2001 ◽

Vol 109 (1266) ◽

pp. S17-S24 ◽

Cited By ~ 33

Author(s):

Takeo OKU

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Direct Analysis ◽

High Resolution Electron Microscopy ◽

Advanced Ceramics ◽

Atomic Structures ◽

Resolution Electron

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High resolution electron microscopy of CrN–TiN thin films grown on Si(100) by magnetron sputtering

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2005.11.092 ◽

2006 ◽

Vol 200 (22-23) ◽

pp. 6201-6205 ◽

Cited By ~ 2

Author(s):

N. Frangis ◽

D. Papapetros ◽

I. Tsiaoussis ◽

S. Logothetidis

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

High Resolution ◽

Magnetron Sputtering ◽

High Resolution Electron Microscopy ◽

Resolution Electron ◽

Tin Thin Films

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Interfacial Atomic Structures During Cobalt Silicidation

MRS Proceedings ◽

10.1557/proc-202-659 ◽

1990 ◽

Vol 202 ◽

Author(s):

A. Catana ◽

P.E. Schmid

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

High Resolution Electron Microscopy ◽

Atomic Scale ◽

Type B ◽

Cross Sectional ◽

Atomic Structures ◽

Resolution Electron ◽

Predominant Orientation ◽

Lower Temperature

ABSTRACTHigh Resolution Electron Microscopy (HREM) and image calculations are combined to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. The samples are prepared by UHV e-beam evaporation of Co layers (2 nm) followed by annealing at 300°C or 400°C. Cross-sectional observations at an atomic scale show that the silicidation of Co at the lower temperature yields epitaxial CoSi/Si domains such that [111]Si // [111]CoSi and <110>Si // <112>CoSi. At about 400°C CoSi2 nucleates at the CoSi/Si interface. During the early stages of this chemical reaction, an epitaxial CoSi/CoSi2/Si system is observed. The predominant orientation is such that (021) CoSi planes are parallel to (220) CoSi2 planes, the CoSi2/Si interface being of type B. The growth of CoSi2 is shown to proceed at the expense of both CoSi and Si.

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