Mechanical Stress, Grain-boundary Relaxation, and Oxidation of Sputtered CuNi(Mn) Films

1999 ◽  
Vol 14 (4) ◽  
pp. 1286-1294 ◽  
Author(s):  
W. Brückner ◽  
W. Pitschke ◽  
S. Baunack ◽  
J. Thomas
Keyword(s):  
Grain Boundary ◽  
Microstructural Characterization ◽  
Excess Vacancy ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Boundary Relaxation ◽  
20 Nm ◽  
Atomic Rearrangement

This paper focuses on understanding stress development in CuNi42Mn1 thin films during annealing in Ar. In addition to stress-temperature measurements, resistance-temperature investigations and chemical and microstructural characterization by Auger electron spectroscopy, scanning and transmission electron microscopy, x-ray diffraction, and atomic force microscopy were also carried out. The films are polycrystalline with a grain size of 20 nm up to 450 °C. To explain the stress evolution above 120 °C, atomic rearrangement (excess-vacancy annihilation, grain-boundary relaxation, and shrinkage of grain-boundary voids) and oxidation were considered. Grain-boundary relaxation was found to be the dominating process up to 250–300 °C. A sharp transition from compressive to tensile stress between 300 and 380 °C is explained by the formation of a NiO surface layer due to reaction with the remaining oxygen in the Ar atmosphere. This oxidation is masking the inherent structural relaxation above 300 °C.

Development of Mechanical Stress in Cuni(mn) Films During Temperature Ramping: Related Mechanisms

1997 ◽  
Vol 505 ◽  
Author(s):  
W. Brückner ◽  
St. Baunack ◽  
W. Pitschke ◽  
J. Thomas
Keyword(s):  
Grain Boundary ◽  
Microstructural Characterization ◽  
Biaxial Stress ◽  
Stress Evolution ◽  
X Ray Diffraction ◽  
Sharp Transition ◽  
X Ray ◽  
Transmission Electron ◽  
Boundary Relaxation ◽  
Atomic Rearrangement

ABSTRACTThis paper focusses on the development of biaxial stress in Cu0.57Nio.42Mno.ol thin films during annealing in Ar and, for comparison, in vacuum. Besides stress-temperature measurements also resistance-temperature investigations as well as chemical and microstructural characterization by Auger electron spectroscopy, scanning and transmission electron microscopy, and X-ray diffraction were carried out. To explain the stress evolution, atomic rearrangement (excessvacancy annihilation, grain-boundary relaxation, and shrinkage of grain-boundary voids) and oxidation were considered. Up to 250 - 300 °C grain-boundary relaxation was found to be the dominating process. A sharp transition from compressive to tensile stress between 300 °C and 380 °C is explained by the formation of a NiO surface layer

Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina

2000 ◽  
Vol 15 (2) ◽  
pp. 347-350 ◽  
Author(s):  
G. S. Cheng ◽  
L. D. Zhang ◽  
S. H. Chen ◽  
Y. Li ◽  
L. Li ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Honeycomb Structure ◽  
Anodic Alumina ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
Force Microscopy ◽  
Gan Nanowires ◽  
Atomic Force ◽  
Transmission Electron ◽  
20 Nm

Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina was synthesized through a gas reaction of Ga2O vapor with a constant ammonia atmosphere at 1273 K in the presence of nano-sized metallic indium catalysis. Atomic force microscopy, x-ray diffraction, Raman backscattering spectroscopy, scanning electron microscopy, and transmission electron microscopy indicate that the ordered nanostructure consists of single-crystalline hexagonal wurtzite GaN nanowires in the uniform pores of anodic alumina about 20 nm in diameter and 40–50 μm in length. The growth mechanism of the ordered nanostructure is discussed. The photoluminescence spectrum of this nanostructure is also reported.

The Microstructural Characterization of Nanocrystalline CeO2 Ceramics Produced by the Sol-Gel Method

1994 ◽  
Vol 343 ◽  
Author(s):  
F. Czerwinski ◽  
J.A. Szpunar
Keyword(s):  
Sol Gel ◽  
Microstructural Characterization ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Structure Of Coatings ◽  
Heating Up

ABSTRACTCeO2 ceramics were manufactured in the form of surface coatings deposited onto various substrates by sol-gel technology. The size of the CeO2 crystallites, dried at room temperature, was about 5 nm and did not change significantly after heating, up to 680 K. Further increase of the temperature resulted in a rapid growth of crystallites. The process of growth depends also on the film thickness and nature of substrate. The results obtained using thermogravimetric analysis (TGA) and infrared spectroscopy (IR) demonstrated that the thermal decomposition of gel was completed at about 750 K. There was no evident texture in both the as-deposited state and after heat-treatment. X-ray diffraction (XRD), the atomic force microscopy (AFM), and transmission electron microscopy (TEM) were used to characterize the structure of coatings. The examples of application of CeO2 ceramics as coatings for high temperature corrosion protection are presented. The role of size of CeO2 particles in modification of grain boundary transport is discussed.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

(G03 Best Paper Award Winner) Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy

2020 ◽  
Vol MA2020-02 (24) ◽  
pp. 1750-1750
Author(s):  
Andrea Quintero Colmenares ◽  
Patrice Gergaud ◽  
Jean-Michel Hartmann ◽  
Vincent Delaye ◽  
Nicolas Bernier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ex Situ ◽  
Paper Award ◽  
X Ray Diffraction ◽  
Award Winner ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Evaluation of the Strain Field Inside and Around Growth Islands by Means of X-Ray Diffuse Scattering

1999 ◽  
Vol 583 ◽  
Author(s):  
Martin Schmidbauer ◽  
Thomas Wiebach ◽  
Helmut Raidt ◽  
Peter Schäfer ◽  
Michael hanke ◽  
...  
Keyword(s):  
Strain Field ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Abrupt Increase ◽  
X Ray ◽  
Force Microscopy ◽  
Self Organized ◽  
Atomic Force ◽  
Transmission Electron ◽  
Highly Strained

AbstractThe strain distribution inside and in the vicinity of coherently strained self-organized islands has been investigated by high-resolution x-ray diffraction (HRXRD). Finite element method (FEM) calculations were carried out in order to calculate the strain field, which was then used to simulate x-ray reciprocal space maps on the basis of kinematical scattering theory. For Si0 75Ge0.25 islands an abrupt increase in the Ge-concentration at about one third of the island height has been found. This behavior can be attributed to different nucleation stages during growth. Highly strained buried CdSe quantum dots (QDs) strongly influence the surrounding ZnSe matrix. From reciprocal space maps and FEM simulations we were able to estimate the shape and size of the islands. The results are in agreement with transmission electron microscopy (TEM) and UHV atomic force microscopy (AFM) data.

Epitaxial Growth and Characterization of the Ordered Vacancy Compound CuIn3Se5 on GaAs (100) Fabricated by Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
Art J. Nelson ◽  
M. Bode ◽  
G. Horner ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Symmetric Vibration ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTEpitaxial growth of the ordered vacancy compound (OVC) CuIn3Se5 has been achieved on GaAs (100) by molecular beam epitaxy (MBE) from Cu2Se and In2Se3 sources. Electron probe microanalysis and X-ray diffraction have confirmed the composition for the 1-3-5 OVC phase and that the film is single crystal Culn3Se5 (100). Transmission electron microscopy (TEM) characterization of the material also showed it to be single crystalline. Structural defects in the layer consisted mainly of stacking faults. Photoluminescence (PL) measurements performed at 7.5 K indicate that the bandgap is 1.28 eV. Raman spectra reveal a strong polarized peak at 152 cm−1, which is believed to arise from the totally symmetric vibration of the Se atoms in the lattice. Atomic force microscopy reveals faceting in a preferred (100) orientation.

scholarly journals Effects of Size and Dispersity of Microcrystalline Celluloses on Size, Structure and Stability of Nanocrystalline Celluloses Extracted by Acid Hydrolysis

Nano LIFE ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1441014 ◽  
Author(s):  
Qi Liu ◽  
Weiping Hao ◽  
Yongguang Yang ◽  
Aurore Richel ◽  
Canbin Ouyang ◽  
...  
Keyword(s):  
Particle Size ◽  
Acid Hydrolysis ◽  
Size Structure ◽  
Particle Sizes ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Sonication Treatment

Nanocrystalline celluloses (NCCs) were separated from four commercial microcrystalline celluloses (MCCs) by an acid hydrolysis–sonication treatment. Transmission electron microscopy (TEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectrum, X-ray diffraction (XRD) and thermogravimetric analysis (TGA) were conducted to investigate the NCCs. MCCs with different morphologies and particle sizes showed different aggregation degrees. The aggregation of MCCs followed the order MCC1 > MCC3 > MCC2 > MCC4, which is the same order of the heights of the resulting NCCs. The best uniformity and thermal stability were characterized for NCC3, which was produced by MCC3 with smallest original particle size and good dispersity among the four MCCs. This result suggests that both the original particle size and dispersity of MCCs had significant effects on separated NCCs.

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