Ca-doped lead zirconate titanate thin film capacitors on base metal nickel on copper foil

2004 ◽  
Vol 19 (10) ◽  
pp. 2841-2848 ◽  
Author(s):  
Taeyun Kim ◽  
Angus I. Kingon ◽  
Jon-Paul Maria ◽  
Robert T. Croswell

Ca-doped lead zirconate titanate (52/48) thin film capacitors were prepared on electroless nickel-coated copper foils for embedded capacitor applications. The impact of Ca doping and process parameter variations was studied. Ca addition significantly reduced the temperature coefficient of capacitance. Specifically, the temperature variation was reduced to less than 10% between 300 and 580 K through calcium addition. Optimized capacitance densities and loss tangents were 400 nF/cm2 and 0.02, respectively. Crystallization temperatures of 600 °C yielded these optimized electrical properties, while higher temperatures resulted in interfacial reactions. The influence of oxygen partial pressure during crystallization was also studied. Dielectric properties were sensitive to pO2, with optimal properties occurring in a narrow pO2 window centered about 10−3 Torr. The trends with oxygen pressure were mirrored by changes in phase assemblage. Electrical transport across the dielectric layers was not strongly dependent upon doping level. This insensitivity was attributed to a thin interfacial layer present in all samples. Interface analysis using equivalent circuit analogues showed the nature of the interface to be highly resistive (insulating), rather than semiconducting or conducting.

2007 ◽  
Vol 515 (18) ◽  
pp. 7331-7336 ◽  
Author(s):  
Taeyun Kim ◽  
Angus I. Kingon ◽  
Jon-Paul Maria ◽  
Robert T. Croswell

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.


2007 ◽  
Vol 154 (11) ◽  
pp. G251 ◽  
Author(s):  
Jiang-Li Cao ◽  
Axel Solbach ◽  
Yan Fang ◽  
Ulrich Boettger ◽  
Peter J. Schorn ◽  
...  

2009 ◽  
Vol 106 (5) ◽  
pp. 054108 ◽  
Author(s):  
Mohamed-Tahar Chentir ◽  
Laurent Ventura ◽  
Émilien Bouyssou ◽  
Christine Anceau

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