Low-temperature growth and characterization of epitaxial ZnO nanorods by metalorganic chemical vapor deposition
2007 ◽
Vol 22
(7)
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pp. 2032-2036
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Keyword(s):
By injecting additional argon gas, we were able to grow one-dimensional ZnO nanorod arrays with a uniform distribution on a large scale at a low temperature of less than 330 °C by metalorganic chemical vapor deposition. All of the nanorods grown on the sapphire substrate had a 30° in-plane rotation with respect to the substrate and showed the epitaxial characteristics of [10¯10]ZnO//[11¯20]sapphire, despite the low-temperature growth. These ZnO nanorods with high crystalline quality exhibited a high enhancement factor and low turn-on field value, thus having good potential to be used as a field emitter.
2000 ◽
Vol 18
(4)
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pp. 1590-1594
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1998 ◽
Vol 20
(1-4)
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pp. 55-64
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1996 ◽
Vol 35
(Part 2, No. 7B)
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pp. L919-L922
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1998 ◽
Vol 326
(1-2)
◽
pp. 251-255
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2007 ◽
Vol 244
(5)
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pp. 1512-1516
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2002 ◽
Vol 14
(3)
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pp. 215-218
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