Size-dependent lattice parameters of microstructure-controlled Sn nanowires

2011 ◽  
Vol 26 (16) ◽  
pp. 2033-2039 ◽  
Author(s):  
Ho Sun Shin ◽  
Jin Yu ◽  
Jae Yong Song ◽  
Hyun Min Park

Abstract

2019 ◽  
Vol 9 (3) ◽  
pp. 964-970 ◽  
Author(s):  
Klemens K. Ilse ◽  
Harish Nagari Gurumoorthy ◽  
Mohammed A. Bahattab ◽  
Saad H. Alqahtani ◽  
Mark Mirza ◽  
...  

Abstract


2013 ◽  
Vol 28 (11) ◽  
pp. 1466-1470 ◽  
Author(s):  
Ju Hyung Lee ◽  
Jin Chul Choi ◽  
Hong Seok Lee

Abstract


MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1231-1236 ◽  
Author(s):  
Nardeep Kumar ◽  
Armando Rúa ◽  
Ramón Díaz ◽  
Iván Castillo ◽  
Brian Ayala ◽  
...  

ABSTRACTUsing ultrafast angle-resolved light scattering technique, we were able to trigger photoinduced phase transition processes in V2O3 film grown on a glass substrate. The phase transition is caused by photoacoustic wave in the film and appears as coherent oscillations of scattering signal at various time scales. These processes strongly depend on the size of microstructures constituting the V2O3 film. One of the key findings of our study is the presence of a size dependent phase transition threshold for V2O3 microstructures, where small size structures ($\tilde <$ 0.5μm) have lowest contribution to the phase transition. The presence of this threshold can be well described by considering uneven internal strain in the films which is one of the key parameters controlling phase transition dynamics in various vanadium oxides.


2011 ◽  
Vol 26 (10) ◽  
pp. 1179-1187 ◽  
Author(s):  
Ioannis N. Mastorakos ◽  
Aikaterini Bellou ◽  
David F. Bahr ◽  
Hussein M. Zbib

Abstract


2018 ◽  
Vol 51 (4) ◽  
pp. 1102-1115 ◽  
Author(s):  
Shangmin Xiong ◽  
Hande Öztürk ◽  
Seung-Yub Lee ◽  
Patricia M. Mooney ◽  
Ismail Cevdet Noyan

The results of a systematic rigorous study on the accuracy of lattice parameters computed from X-ray diffraction patterns of ideally perfect nanocrystalline powder and thin-film samples are presented. It is shown that, if the dimensions of such samples are below 20 nm, the lattice parameters obtained from diffraction analysis will deviate from their true values. The relative deviation depends on the relevant size parameter through an inverse power law and, for particular reflections, depends on the angular peak positions. This size-dependent error, Δa/a, is larger than the precision of typical X-ray diffraction measurements for ∼20 nm-thick diffracting domains, and it can be several orders of magnitude larger for particles smaller than 5 nm.


2019 ◽  
Vol 34 (13) ◽  
pp. 2148-2160
Author(s):  
Wu-Rong Jian ◽  
Xiaohu Yao ◽  
Yugang Sun ◽  
Zhuocheng Xie ◽  
Xiaoqing Zhang

Abstract


1999 ◽  
Vol 580 ◽  
Author(s):  
E. Johnson ◽  
C.R.H. Bahl ◽  
V.S. Touboltsev ◽  
A. Johansen

AbstractAl-Sn surface alloys with 2-3 at.% Sn have been made by ion implantation of Sn in Al. The microstructure of the alloys consists of dense distributions of nanoscale Sn inclusions embedded in the Al matrix. For implantations carried out at 425 K the inclusions have sizes in the range from about 2 to 15 nm. The structure of the inclusions is tetragonal - the white Sn structure – with lattice parameters of a = 0.583 nm and c = 0.318 nm respectively, i.e. identical to the lattice parameters of bulk Sn. The inclusions grow in preferred alignment with the matrix and the most commonly observed orientation relationships is given by (100)Sn ||(111)Al and [010]Sn || [211]Al. The shape of the inclusions is partly faceted and partly rounded with larger flat facets on the {100}Sn/{111}Al interfaces. Melting and solidification of the inclusions, which have been studied by in-situ transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS) in combination with channeling, shows a distinct hysteresis. Melting of the inclusions which is associated with a distinct premelting, takes place in the range from about 430 K to 485 K, i.e. significantly below the bulk melting point of 505 K. The premelting is size dependent and the smallest inclusions melt at the lowest temperatures. Solidification requires a substantial undercooling and takes place from around 400 K with a much weaker size dependence.


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