Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing

2018 ◽  
Vol 33 (20) ◽  
pp. 3355-3361 ◽  
Author(s):  
Yuichi Yamazaki ◽  
Yoji Chiba ◽  
Takahiro Makino ◽  
Shin-Ichiro Sato ◽  
Naoto Yamada ◽  
...  

Abstract

2019 ◽  
Vol 963 ◽  
pp. 709-713
Author(s):  
Yoji Chiba ◽  
Yuichi Yamazaki ◽  
Takahiro Makino ◽  
Shinichiro Sato ◽  
Naoto Yamada ◽  
...  

We demonstrated that silicon vacancy (VSi) can be created in SiC pn junction diode by proton beam writing (PBW) without degradation of the diode performance. The VSi showed the same specific emission for both optically and electrically excitation, which suggests that electrically controllable VSi was created. In addition, optically detected magnetic resonance (ODMR) signal was successfully detected from optically excited VSi at room temperature. This result suggests that VSi introduced into the device by PBW still maintain spin manipulating capability, which is an important step toward realizing SiC devices internally equipped with a VSi-based quantum sensor.


Author(s):  
Nannan Liu ◽  
P. Santhana Raman ◽  
Xinxin Xu ◽  
Huei Ming Tan ◽  
Anjam Khursheed ◽  
...  

2004 ◽  
Author(s):  
Andrew A. Bettiol ◽  
Kambiz Ansari ◽  
Tze Chien Sum ◽  
Jeroen A. van Kan ◽  
Frank Watt

2012 ◽  
Vol 83 (2) ◽  
pp. 02B902 ◽  
Author(s):  
J. A. van Kan ◽  
P. Malar ◽  
Armin Baysic de Vera

Sign in / Sign up

Export Citation Format

Share Document