Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics
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ABSTRACTTransition metal (Cr) and rare-earth (Dd, Dy) doped III-nitride semiconductor bulk layers and superlattice (SL) structures are grown on sapphire (0001) substrates and GaN (0001) templates by plasma-assisted molecular-beam epitaxy. For the GaGdN/GaN and InGaGdN/GaN SL and Si co-doped samples, enhancement of magnetization and magnetic moment are observed, suggesting the carrier-mediated ferromagnetism. Low temperature growth of GaGdN can increase the Gd concentration and magnetization. Results for the Dy-doped GaN as well as the GaCrN/AlN/GaCrN tunnel magneto-resistance (TMR) diodes are also described.
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2017 ◽
Vol 9
(3)
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pp. 364-372
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A Unique Approach to Characterization of Sol-Gel-Derived Rare-Earth-Doped Oxyfluoride Glass-Ceramics
2012 ◽
Vol 96
(2)
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pp. 476-480
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Sol Gel
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2007 ◽
Vol 21
(08n09)
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pp. 1481-1485
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1996 ◽
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(5)
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pp. 709-713
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