Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics

2011 ◽  
Vol 1290 ◽  
Author(s):  
H. Asahi ◽  
S. Hasegawa ◽  
Y.K. Zhou ◽  
S. Emura

ABSTRACTTransition metal (Cr) and rare-earth (Dd, Dy) doped III-nitride semiconductor bulk layers and superlattice (SL) structures are grown on sapphire (0001) substrates and GaN (0001) templates by plasma-assisted molecular-beam epitaxy. For the GaGdN/GaN and InGaGdN/GaN SL and Si co-doped samples, enhancement of magnetization and magnetic moment are observed, suggesting the carrier-mediated ferromagnetism. Low temperature growth of GaGdN can increase the Gd concentration and magnetization. Results for the Dy-doped GaN as well as the GaCrN/AlN/GaCrN tunnel magneto-resistance (TMR) diodes are also described.

2004 ◽  
Vol 43 (19) ◽  
pp. 3829 ◽  
Author(s):  
Lionel Aigouy ◽  
Yannick De Wilde ◽  
Michel Mortier ◽  
Jacques Giérak ◽  
Eric Bourhis

2012 ◽  
Vol 96 (2) ◽  
pp. 476-480 ◽  
Author(s):  
Go Kawamura ◽  
Ryota Yoshimura ◽  
Kazunari Ota ◽  
Song-Yul Oh ◽  
Norio Hakiri ◽  
...  

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1481-1485 ◽  
Author(s):  
TADASHI TAKAMASU ◽  
KOICHI SATO

The rare-earth doped AlAs/GaAs superlattices were grown by molecular beam epitaxy method. From the magneto-oscillation of the interband broad photoluminescence peak, electrons accumulated in the well were analyzed.


2011 ◽  
Vol 2 (2) ◽  
pp. 127-131 ◽  
Author(s):  
Sanjeev Kumar ◽  
Sunil Kumar ◽  
Sanyog Jain ◽  
N. K. Verma

Author(s):  
S. Wakahara ◽  
Y. Furuya ◽  
T. Yanagida ◽  
Y. Yokota ◽  
J. Pejchal ◽  
...  

1996 ◽  
Vol 25 (5) ◽  
pp. 709-713 ◽  
Author(s):  
B. J. H. Stadler ◽  
K. Vaccaro ◽  
A. Davis ◽  
G. O. Ramseyer ◽  
E. A. Martin ◽  
...  

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