ON ENABLING NANOCRYSTALLINE DIAMOND FOR DEVICE USE: NOVEL ION BEAM METHODOLOGY AND THE REALIZATION OF SHALLOW N-TYPE DIAMOND

2012 ◽  
Vol 1478 ◽  
Author(s):  
A.H. Khan ◽  
A.V. Sumant

AbstractDespite the many superior attributes of diamond, electronic device performance to date has fallen well behind theoretical expectation. The potential realization of highly efficient electronic polycrystalline diamond devices has been more than limited by certain technological challenges such as maintaining efficient/shallow n-type doping without higher density of defects or incorporation of sp2 bonded carbon as a result of doping(during ion implantation process). Specific n-type diamond reports demonstrating phosphorus doping (with activation energy reported in the range of 485 meV to 600 meV in (100) oriented systems have been particularly problematic as a lower solubility is found as compared to (111) oriented synthesis efforts, in addition to the reported self-compensating nature. Amongst the previous reports of Phosphorus-doped diamond nearly all experimental reports to date show visual crystallographic dislocation/pitting on the (100) facet with even moderate doping where dislocations have been observed to be incorporated into the bulk volume during growth. These dislocations, which are known carrier scattering sites, subsequently lower mobility rendering poor conductance and high resistivity. Due to this well-known sensitivity of phosphorus incorporation to the crystal quality, typically lower in polycrystalline than homoepitaxial films, polycrystalline-based experimental reports have been largely absent. With respect to Phosphorus in-situ doping based efforts, rendered films demonstrate both the visually identifiable pitting and electronically identifiable poor conduction characteristic, and with respect to ion beam doping efforts, complete graphitic flaking at even moderate doses (i.e. greater than 3x1017cm−3). Motivated by these shortcomings and the success of recent experimentation, we present the methodology and data from our recent successful fabrication of polycrystalline diamond P+-i-N junction (diode) with high crystal quality, high power handling capability, high current density, low threshold voltage, and ohmic contact, under room temperature operation, previously undemonstrated across all diamond material types. The superior electrical performance of the device was obtained by novel ion beam methodology designed to resolve previously unaddressed issues relating to n-type doping of diamond materials. A high current density of approximately 104 A/cm2 is attained at 20V forward bias.

2018 ◽  
Vol 52 (5) ◽  
pp. 055205 ◽  
Author(s):  
Sanjeev Kumar Maurya ◽  
Sushanta Barman ◽  
Samit Paul ◽  
Sudeep Bhattacharjee

1991 ◽  
Vol 30 (Part 1, No. 11B) ◽  
pp. 3233-3237 ◽  
Author(s):  
Yoshio Takahashi ◽  
Yuuichi Madokoro ◽  
Tohru Ishitani

2021 ◽  
Author(s):  
Kaiqing Wang ◽  
Yunxia Jin ◽  
Fei Xiao

Abstract Silver nanowire (AgNW) network has been employed to many electronic devices as transparent electrode. However, the poor electrical stability under current has been seriously holding its practical application, and we still lack long-term electrically stable AgNW system to study the underlying fundamental of electrical failure. In this work, the electrical performance and failure mechanism of chitosan-ascorbic acid (Chi-AsA)/AgNW composite under current stress were thoroughly studied. The composite electrode maintained stability above 24000 h under high current density of 100 mA cm-1. The main failure in AgNW composite is found to be a wave break perpendicular to the current rather than traditional uniform degradation across AgNW networks. More interestingly, the AgNWs in failed composite electrode kept their original smooth morphology excepting the crack area, while the AgNWs in pristine networks degraded to nanoparticles or became disconnected everywhere. The patterned AgNW composite in microscale exhibits similar long lifetime in resisting current stress as the bulk composite film. The effect of over-coating position, electrical stress, temperature and over-coating materials on the electrical stability were studied. The over-coating layer of Chi-AsA is proven to suppress the silver atoms from migration, reduce the concentrated Joule heating at junctions, and inhibit the corrosion. The Chi-AsA/AgNW composite enables electrically stable transparent conductor for next-generation optoelectronics, and the mechanism investigation may provide effective means of preparing electrically stable AgNW systems.


2015 ◽  
Vol 86 (11) ◽  
pp. 113303 ◽  
Author(s):  
Y. Hirano ◽  
S. Kiyama ◽  
Y. Fujiwara ◽  
H. Koguchi ◽  
H. Sakakita

2004 ◽  
Vol 75 (5) ◽  
pp. 1675-1677 ◽  
Author(s):  
V. Zorin ◽  
S. Golubev ◽  
S. Razin ◽  
A. Sidorov ◽  
V. Skalyga ◽  
...  

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