scholarly journals Long-Term Electrically Stable Silver Nanowire Composite Transparent Electrode Under High Current Density

2021 ◽  
Author(s):  
Kaiqing Wang ◽  
Yunxia Jin ◽  
Fei Xiao
Keyword(s):  
Current Density ◽  
Composite Electrode ◽  
High Current Density ◽  
Transparent Electrode ◽  
Silver Nanowire ◽  
Electrical Performance ◽  
High Current ◽  
Electrical Stability ◽  
Current Stress

Abstract Silver nanowire (AgNW) network has been employed to many electronic devices as transparent electrode. However, the poor electrical stability under current has been seriously holding its practical application, and we still lack long-term electrically stable AgNW system to study the underlying fundamental of electrical failure. In this work, the electrical performance and failure mechanism of chitosan-ascorbic acid (Chi-AsA)/AgNW composite under current stress were thoroughly studied. The composite electrode maintained stability above 24000 h under high current density of 100 mA cm-1. The main failure in AgNW composite is found to be a wave break perpendicular to the current rather than traditional uniform degradation across AgNW networks. More interestingly, the AgNWs in failed composite electrode kept their original smooth morphology excepting the crack area, while the AgNWs in pristine networks degraded to nanoparticles or became disconnected everywhere. The patterned AgNW composite in microscale exhibits similar long lifetime in resisting current stress as the bulk composite film. The effect of over-coating position, electrical stress, temperature and over-coating materials on the electrical stability were studied. The over-coating layer of Chi-AsA is proven to suppress the silver atoms from migration, reduce the concentrated Joule heating at junctions, and inhibit the corrosion. The Chi-AsA/AgNW composite enables electrically stable transparent conductor for next-generation optoelectronics, and the mechanism investigation may provide effective means of preparing electrically stable AgNW systems.

ON ENABLING NANOCRYSTALLINE DIAMOND FOR DEVICE USE: NOVEL ION BEAM METHODOLOGY AND THE REALIZATION OF SHALLOW N-TYPE DIAMOND

2012 ◽  
Vol 1478 ◽  
Author(s):  
A.H. Khan ◽  
A.V. Sumant
Keyword(s):  
Current Density ◽  
Electronic Device ◽  
High Current Density ◽  
Ion Beam ◽  
Forward Bias ◽  
Polycrystalline Diamond ◽  
Crystal Quality ◽  
Electrical Performance ◽  
High Resistivity ◽  
High Current

AbstractDespite the many superior attributes of diamond, electronic device performance to date has fallen well behind theoretical expectation. The potential realization of highly efficient electronic polycrystalline diamond devices has been more than limited by certain technological challenges such as maintaining efficient/shallow n-type doping without higher density of defects or incorporation of sp2 bonded carbon as a result of doping(during ion implantation process). Specific n-type diamond reports demonstrating phosphorus doping (with activation energy reported in the range of 485 meV to 600 meV in (100) oriented systems have been particularly problematic as a lower solubility is found as compared to (111) oriented synthesis efforts, in addition to the reported self-compensating nature. Amongst the previous reports of Phosphorus-doped diamond nearly all experimental reports to date show visual crystallographic dislocation/pitting on the (100) facet with even moderate doping where dislocations have been observed to be incorporated into the bulk volume during growth. These dislocations, which are known carrier scattering sites, subsequently lower mobility rendering poor conductance and high resistivity. Due to this well-known sensitivity of phosphorus incorporation to the crystal quality, typically lower in polycrystalline than homoepitaxial films, polycrystalline-based experimental reports have been largely absent. With respect to Phosphorus in-situ doping based efforts, rendered films demonstrate both the visually identifiable pitting and electronically identifiable poor conduction characteristic, and with respect to ion beam doping efforts, complete graphitic flaking at even moderate doses (i.e. greater than 3x1017cm−3). Motivated by these shortcomings and the success of recent experimentation, we present the methodology and data from our recent successful fabrication of polycrystalline diamond P+-i-N junction (diode) with high crystal quality, high power handling capability, high current density, low threshold voltage, and ohmic contact, under room temperature operation, previously undemonstrated across all diamond material types. The superior electrical performance of the device was obtained by novel ion beam methodology designed to resolve previously unaddressed issues relating to n-type doping of diamond materials. A high current density of approximately 104 A/cm2 is attained at 20V forward bias.

Excellent performance of carbon-coated TiO2/Li4Ti5O12 composites with low Li/Ti ratio for Li-ion storage

RSC Advances ◽  
2015 ◽  
Vol 5 (113) ◽  
pp. 93155-93161 ◽  
Author(s):  
Wei Yang ◽  
Xue Bai ◽  
Tao Li ◽  
Yuan-Yuan Ma ◽  
Yong-Xin Qi ◽  
...  
Keyword(s):  
Current Density ◽  
High Current Density ◽  
Cycling Performance ◽  
High Rate ◽  
High Current ◽  
Excellent Performance ◽  
Ion Storage ◽  
Carbon Coated ◽  
Li Ion

Carbon-coated TiO2/Li4Ti5O12 composites with Li : Ti = 4 : 8 display high rate capacities and excellent long-term cycling performance at high current density.

High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

2015 ◽  
Vol 30 (6) ◽  
pp. 2891-2895 ◽  
Author(s):  
James A. Schrock ◽  
William B. Ray II ◽  
Kevin Lawson ◽  
Argenis Bilbao ◽  
Stephen B. Bayne ◽  
...  
Keyword(s):  
Reliability Analysis ◽  
Current Density ◽  
High Current Density ◽  
High Mobility ◽  
High Current ◽  
Transient Conditions

Two π‐Conjugated Covalent Organic Frameworks with Long‐Term Cyclability at High Current Density for Lithium Ion Battery

2019 ◽  
Vol 25 (68) ◽  
pp. 15472-15476 ◽  
Author(s):  
Heng Chen ◽  
Yadi Zhang ◽  
Chengyang Xu ◽  
Mufan Cao ◽  
Hui Dou ◽  
...  
Keyword(s):  
Lithium Ion Battery ◽  
Current Density ◽  
High Current Density ◽  
Lithium Ion ◽  
Covalent Organic Frameworks ◽  
High Current

A carbon nanotube field emission cathode with high current density and long-term stability

2009 ◽  
Vol 20 (32) ◽  
pp. 325707 ◽  
Author(s):  
Xiomara Calderón-Colón ◽  
Huaizhi Geng ◽  
Bo Gao ◽  
Lei An ◽  
Guohua Cao ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Emission ◽  
Current Density ◽  
High Current Density ◽  
High Current ◽  
Field Emission Cathode ◽  
Term Stability ◽  
Long Term Stability ◽  
Emission Cathode

30μm Thick Cu RDL in WLCSP

2019 ◽  
Vol 2019 (DPC) ◽  
pp. 000195-000211
Author(s):  
Jacinta Amanlim ◽  
Kenny Cao ◽  
Zhang Li ◽  
K.H. Tan
Keyword(s):  
Current Density ◽  
High Power ◽  
High Current Density ◽  
Electrical Performance ◽  
Design Rule ◽  
High Current ◽  
Wafer Level ◽  
Cu Metallization ◽  
Additional Layer ◽  
Board Level

In situations where a device may have an interconnect pad arrangement in wafer level packaging, an additional layer of lateral connections may be employed to rearrange the connections in a manner suitable for wafer level processing. This additional layer is known as a redistribution layer, or RDL, and fabricated from a thin layer of metal with dielectrics in between. An RDL is used for higher electrical performance and complex routing to meet electrical requirements. As the importance of high power and power management in electronics products continue to rise, so also will the demands for power ICs to handle ever higher voltages without appreciably adding size and heat to the end product. Using thicker Cu metallization in an RDL is an ideal choice that accommodates high current density and lower resistance for high power applications. Assembling multiple chips in multiple layers requires more electrical connections, which in turn requires both thinner lines within the RDL and an increase in the number of RDL layers. The RDL line width of WLCSP started at over 20μm, but has already been reduced to 10~15μm in HVM. Industry players are now working in R&D to develop 2μm wide and even smaller line/space (L/S) capability to meet the requirements of today's high-end applications. In this study, we present the development of 20–30 μm thick plated Cu RDL for high power and high current density applications. Using a plated Cu process and photo-sensitive spin-on-dielectrics materials, thick Cu RDL was achieved with the AR 1:1 design rule and the reliability assessment was carried out with JEDEC reliability test conditions. A 2-layer Cu RDL (total 6-mask process with UBM) was developed and characterized for its component and board level reliability for 5×5/7×7mm, 0.35/0.4mm ball pitch WLCSP test vehicles.

scholarly journals Alcohols electrooxidation coupled with H2 production at high current densities promoted by a cooperative catalyst

2022 ◽  
Vol 13 (1) ◽  
Author(s):  
Zhenhua Li ◽  
Yifan Yan ◽  
Si-Min Xu ◽  
Hua Zhou ◽  
Ming Xu ◽  
...  
Keyword(s):  
Benzyl Alcohol ◽  
Current Density ◽  
High Current Density ◽  
H2 Production ◽  
Open Circuit ◽  
High Current ◽  
Cell Potential ◽  
Current Densities ◽  
Electrode Membrane

AbstractElectrochemical alcohols oxidation offers a promising approach to produce valuable chemicals and facilitate coupled H2 production. However, the corresponding current density is very low at moderate cell potential that substantially limits the overall productivity. Here we report the electrooxidation of benzyl alcohol coupled with H2 production at high current density (540 mA cm−2 at 1.5 V vs. RHE) over a cooperative catalyst of Au nanoparticles supported on cobalt oxyhydroxide nanosheets (Au/CoOOH). The absolute current can further reach 4.8 A at 2.0 V in a more realistic two-electrode membrane-free flow electrolyzer. Experimental combined with theoretical results indicate that the benzyl alcohol can be enriched at Au/CoOOH interface and oxidized by the electrophilic oxygen species (OH*) generated on CoOOH, leading to higher activity than pure Au. Based on the finding that the catalyst can be reversibly oxidized/reduced at anodic potential/open circuit, we design an intermittent potential (IP) strategy for long-term alcohol electrooxidation that achieves high current density (>250 mA cm−2) over 24 h with promoted productivity and decreased energy consumption.

A durable VO2(M)/Zn battery with ultrahigh rate capability enabled by pseudocapacitive proton insertion

2020 ◽  
Vol 8 (4) ◽  
pp. 1731-1740 ◽  
Author(s):  
Lishang Zhang ◽  
Ling Miao ◽  
Bao Zhang ◽  
Jinsong Wang ◽  
Jia Liu ◽  
...  
Keyword(s):  
Current Density ◽  
Cathode Surface ◽  
High Current Density ◽  
Rate Capability ◽  
Electrochemical Process ◽  
High Current ◽  
Long Term Stability ◽  
Hydrate Deposition ◽  
Sulfate Hydrate

Reversible hydroxyzinc sulfate hydrate deposition/dissolution in electrochemical process could be observed on cathode surface. Good long term stability retention could also be achieved at high current density of 20 A g−1.

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