SiC monolithically integrated wavelength selector with 4 channels

2013 ◽  
Vol 1536 ◽  
pp. 79-84 ◽  
Author(s):  
M. Vieira ◽  
M. A. Vieira ◽  
V. Silva ◽  
P. Louro ◽  
J. Costa

ABSTRACTIn this paper we present a monolithically integrated wavelength selector based on a double pin/pin a-SiC:H integrated optical active filter that requires optical switches to select visible wavelengths. Red, green, blue and violet pulsed communication channels are transmitted together, each one with a specific bit sequence. The combined optical signal is analyzed by reading out the generated photocurrent, under violet (400 nm) background applied either from the front or the back side of the device. The front and back backgrounds acts as channel selectors that selects one or more channels by splitting portions of the input multi-channel optical signals across the front and the back photodiodes. The transfer characteristics effects due to changes irradiation side are presented. The relationship between the optical inputs and the corresponding digital output levels is established through a 16-element look-up table to perform the optoelectronic conversion.Results show that the wavelength selector acts as a reconfigurable active filter that enhances the spectral sensitivity in a specific wavelength range and quenched it in the others, tuning a specific band. A binary weighted RGBV code that takes into account the specific weights assigned to each bit position is presented and establishes the optoelectronic functions.

2014 ◽  
Vol 1666 ◽  
Author(s):  
M. Vieira ◽  
M. A. Vieira ◽  
V. Silva ◽  
I. Rodrigues ◽  
P. Louro

ABSTRACTIn this paper we present a monolithically integrated wavelength selector based on a multilayer pi’n/pin a-SiC:H integrated optical filter that requires appropriate near-ultraviolet steady states optical switches to select the desired wavelengths in the VIS-NIR ranges.Results show that the background intensity works as a selector in the infrared/visible regions, shifting the sensor sensitivity. Low intensities select the NIR range while high intensities select the visible part accordingly to its wavelength. Here, the optical gain is very high in the red range, decreases in the green range, and stays near one in the blue region decreasing strongly in the near-UV range. The transfer characteristics effects due to changes in steady state light intensity and wavelength backgrounds are presented. The relationship between the optical inputs and the output signal is established when a multiplexed signal is analyzed.


Nanophotonics ◽  
2018 ◽  
Vol 7 (4) ◽  
pp. 727-733 ◽  
Author(s):  
Huifu Xiao ◽  
Dezhao Li ◽  
Zilong Liu ◽  
Xu Han ◽  
Wenping Chen ◽  
...  

AbstractIn this paper, we propose and experimentally demonstrate an integrated optical device that can implement the logical function of priority encoding from a 4-bit electrical signal to a 2-bit optical signal. For the proof of concept, the thermo-optic modulation scheme is adopted to tune each micro-ring resonator (MRR). A monochromatic light with the working wavelength is coupled into the input port of the device through a lensed fiber, and the four input electrical logic signals regarded as pending encode signals are applied to the micro-heaters above four MRRs to control the working states of the optical switches. The encoding results are directed to the output ports in the form of light. At last, the logical function of priority encoding with an operation speed of 10 Kbps is demonstrated successfully.


Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1534
Author(s):  
Remigiusz Rajewski

The banyan-type switching networks, well known in switching theory and called the logdN switching fabrics, are composed of symmetrical switching elements of size d×d. In turn, the modified baseline architecture, called the MBA(N,e,g), is only partially built from symmetrical optical switching elements, and it is constructed mostly from asymmetrical optical switching elements. Recently, it was shown that the MBA(N,e,g) structure requires a lower number of passive as well as active optical elements than the banyan-type switching fabric of the same capacity and functionality, which makes it an attractive solution. However, the optical signal-to-crosstalk ratio for the MBA(N,e,g) was not investigated before. Therefore, in this paper, the optical signal-to-crosstalk ratio in the MBA(N,e,g) was determined. Such crosstalk influences the output signal’s quality. Thus, if such crosstalk is lower, the signal quality is better. The switching fabric proposed in the author’s previous work has lower optical signal losses than a typical Beneš and banyan-type switching networks of this same capacity and functionality, which gives better quality of transmitted optical signals at the switching node’s output. The investigated MBA(N,e,g) architecture also contains one stage fewer than banyan-type network of the same capacity, which is an essential feature from the optical switching point of view.


1998 ◽  
Author(s):  
Luigi Sirleto ◽  
Michele A. Forastiere ◽  
Giancarlo C. Righini ◽  
Alessandro Verciani ◽  
Giancarlo Abbate ◽  
...  

2015 ◽  
Vol 643 ◽  
pp. 157-163
Author(s):  
Akihira Miyachi ◽  
Takafumi Kojima ◽  
Yasunori Fujii ◽  
Masanori Takeda ◽  
Yoshinori Uzawa ◽  
...  

In this study, we demonstrate a method for adjusting the frequency bandwidth of a Superconductor-insulator-superconductor (SIS) mixer device by controlling its thickness after microfabrication. We estimate the relationship between SIS mixer device thickness and frequency bandwidth using electromagnetic (EM) simulation. We propose an optimal method for the precision polishing of the back side of the device. We evaluate the noise temperature and measure the frequency bandwidth of SIS mixer devices with different thicknesses. This study presents the adjustment of the frequency bandwidth of a device through controlling its thickness after microfabrication. This technique may improve the yield of SIS mixer device mass production and support the construction of receivers for ultra-high frequencies such as Atacama Large Millimeter/Submillimeter Array (ALMA) Band 10.


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