Impact of the Aggressive Scaling on the Performance of FinFETs: the Role of a Single Dopant in the Channel
ABSTRACTNon-equilibrium Green’s functions (NEGF) simulations are carried out to determine the impact of an unintentional dopant in the middle of the channel of a FinFET. We consider two different geometries scaled according to the ITRS and two different types of dopants, donors and acceptors. We show that there is a degradation of the subthreshold characteristics with the scaling of the smooth device and also a stronger impact of the stray dopants in the middle of the channel, with variations up to 32% in the current in on-state conditions.
2018 ◽
Keyword(s):
2016 ◽
Vol 696
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pp. 012019
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2021 ◽
Vol 9
(3)
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pp. 371-405