Epitaxial Growth of (Na,K)NbO3 based materials on SrTiO3 by pulsed laser deposition

ABSTRACTLead-free, piezoelectric (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films were epitaxially grown onto (100) SrTiO3 substrate via pulsed laser deposition. The effects of post-annealing temperature on the crystal phases, mosaic spread, and chemical composition of the deposited (Na,K)NbO3 and (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films were analyzed. Results indicate the epitaxial growth of (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films deposited at an oxygen pressure (PO2) of ≥40 Pa and substrate temperature (Ts) of 800°C. The alkaline-deficiency could be suppressed in the (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films deposited at PO2 ≥ 70 Pa. AFM profile of the (Na,K)NbO3 post-annealed at 1000°C indicates the epitaxial growth of film with atomically flat step-terrace structure, while that of the (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 film post-annealed at 1200°C shows relatively smooth surface with step-terrace structure and several cubic crystals. It was also found that the preferential evaporation of alkaline components could be suppressed by annealing under covered substrate condition.

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Effect of Annealing on Structural and Optical Properties of Pulsed Laser Deposited Titanium Dioxide Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.67.65 ◽

2009 ◽

Vol 67 ◽

pp. 65-70 ◽

Cited By ~ 1

Author(s):

Gaurav Shukla ◽

Alika K. Khare

Keyword(s):

Thin Films ◽

Optical Properties ◽

Pulsed Laser Deposition ◽

Annealing Temperature ◽

Ambient Pressure ◽

Pulsed Laser ◽

Laser Deposition ◽

Tio2 Thin Films ◽

Post Annealing ◽

Post Annealing Temperature

TiO2 is a widely studied material for many important applications in areas such as environmental purification, photocatalyst, gas sensors, cancer therapy and high effect solar cell. However, investigations demonstrated that the properties and applications of titanium oxide films depend upon the nature of the crystalline phases present in the films, i.e. anatase and rutile phases. We report on the pulsed laser deposition of high quality TiO2 thin films. Pulsed Laser deposition of TiO2 thin films were performed in different ambient viz. oxygen, argon and vacuum, using a second harmonic of Nd:YAG laser of 6 ns pulse width. These deposited films of TiO2 were further annealed for 5hrs in air at different temperatures. TiO2 thin films were characterized using x-ray diffraction, SEM, photoluminescence, transmittance and reflectance. We observed effect of annealing over structural, morphological and optical properties of TiO2 thin films. The anatase phase of as-deposited TiO2 thin films is found to change into rutile phase with increased annealing temperature. Increase in crystalline behaviour of thin films with post-annealing temperature is also observed. Surface morphology of TiO2 thin films is dependent upon ambient pressure and post- annealing temperature. TiO2 thin films are found to be optically transparent with very low reflectivity hence will be suitable for antireflection coating applications.

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The effects of the post-annealing temperature on the growth mechanism of Bi2Sr2Ca1Cu2O8+∂ thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD)

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2013.03.054 ◽

2013 ◽

Vol 566 ◽

pp. 175-179 ◽

Cited By ~ 8

Author(s):

O. Nane ◽

B. Özçelik ◽

D. Abukay

Keyword(s):

Thin Films ◽

Single Crystal ◽

Pulsed Laser Deposition ◽

Growth Mechanism ◽

Annealing Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Post Annealing ◽

Post Annealing Temperature

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A STUDY ON STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF ZnO FILM PREPARED BY PULSED LASER DEPOSITION ON Si(111) SUBSTRATES

International Journal of Modern Physics B ◽

10.1142/s0217979207037016 ◽

2007 ◽

Vol 21 (10) ◽

pp. 1775-1785 ◽

Cited By ~ 3

Author(s):

XIAN-QI WEI ◽

BAO-YUAN MAN ◽

YU-TAI WANG ◽

HUI-ZHAO ZHUANG

Keyword(s):

Thin Films ◽

Ir Spectra ◽

Pulsed Laser Deposition ◽

Annealing Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Zno Film ◽

Post Annealing ◽

Structural And Optoelectronic Properties

Zinc oxide (ZnO) thin films grown on Si (111) substrates by pulsed laser deposition at O 2 ambient pressure of 1.3 Pa at different deposition temperatures have been studied. ZnO thin films underwent annealing treatment after deposition. The structural and optoelectronic properties of deposited and annealed thin films have been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), infrared absorption (IR) spectra, four-probe measurements and photoluminescence (PL) spectra. The XRD observation shows that the best crystalline quality of ZnO thin films with hexagonal structure are those grown at a temperature of 400°C and annealed at a temperature of 600°C, respectively. AFM results show that the surface roughness of the ZnO films can be decreased with increasing annealing temperature up to 600°C and then increased by further increasing the annealing temperature. The intense absorption peak sited at 417.54 cm-1 has been observed by IR spectra for ZnO film grown at 400°C and annealed at 600°C, and the property of absorption is improved by post-annealing. ZnO film grown at 400°C with a resistivity of 12.3 Ω· cm shows the best n-type semiconductor property. The PL spectra show the dominant increase in UV emission by annealing. It is concluded that the best post-annealing temperature is about 600°C.

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