Nonlinearity Found in Thermoelectric Devices Made of Heterogeneous Semiconductor Nanowire Networks

2015 ◽  
Vol 1785 ◽  
pp. 27-33
Author(s):  
Kate J. Norris ◽  
Matthew P. Garrett ◽  
Junce Zhang ◽  
Elane Coleman ◽  
Gary S. Tompa ◽  
...  
Keyword(s):  
Power Generation ◽  
Structural Integrity ◽  
Electrical Power ◽  
Copper Substrate ◽  
Thermoelectric Devices ◽  
Semiconductor Nanowire ◽  
Linear Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Nanowire Networks

ABSTRACTWe present a concept to increase efficiencies utilizing nonlinear elements integrated with our semiconductor nanowire networks. Demonstrated here is power generation with thermoelectric devices made of two nanowire networks, one silicon and one indium phosphide, grown on a mechanically flexible copper substrate. Electron microscopy was utilized to characterize structural integrity of the nanowire networks. Non-linear current-voltage characteristics were observed, which suggests a new platform to increase maximum electrical power generation for a given temperature gradient.

scholarly journals Non-Linear Current-Voltage Characteristics of Graphite/Piezoelectric Composite.

2002 ◽  
Vol 110 (1280) ◽  
pp. 310-313 ◽  
Author(s):  
Toshitaka OTA ◽  
Naoto YAMAUCHI ◽  
Keiji DAIMON ◽  
Yasuo HIKICHI ◽  
Hidetoshi MIYAZAKI ◽  
...  
Keyword(s):  
Piezoelectric Composite ◽  
Linear Current ◽  
Current Voltage ◽  
Non Linear ◽  
Current Voltage Characteristics

Flexible Thermoelectric Devices Based on Indium Phosphide Nanowire Networks on Copper

2014 ◽  
Vol 1682 ◽  
Author(s):  
Kate J. Norris ◽  
Brian Tuan ◽  
Elane Coleman ◽  
David M. Fryauf ◽  
Junce Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Power Generation ◽  
Indium Phosphide ◽  
Metallic Substrate ◽  
Total Power ◽  
Semiconductor Nanowire ◽  
Nanowire Network ◽  
Multiple Materials ◽  
Nanowire Networks ◽  
Si Thin Film

ABSTRACTMore than 50% of total input energy is wasted as heat in various industrial processes. If we could harness a small fraction of the waste heat while satisfying the economic demands of cost versus performance, then thermoelectric (TE) power generation could bring substantial positive impacts. To meet these demands single-crystal semiconductor nanowire networks have been investigated as a method to achieve advanced TE devices because of their predicted large reduction in thermal conductivity and increase in power factor.To further our goal of developing practical and economical TE devices, we designed and developed a material platform that combined a semiconductor nanowire network and a semiconductor thin film integrated directly on a mechanically flexible metallic substrate. We assessed the potential of this platform by using indium phosphide (InP) nanowire networks and a doped poly-silicon (poly-Si) thin film combined on copper sheets. InP nanowires were grown by metal organic chemical vapor deposition (MOCVD). In the nanowire network, InP nanowires were grown in three-dimensional networks in which electrical charges and heat travel under the influence of their characteristic scattering mechanisms over a distance much longer than the mean length of the constituent nanowires. Subsequently, plasma-assisted CVD was utilized to form a poly-Si thin film to prevent electrical shorting when an ohmic copper top contact was made. An additional facet to this design is the utilization of multiple materials to address the various temperature ranges at which each material is most efficient at heat-to-energy conversion. The utilization of multiple materials could enable the enhancement of total power generation for a given temperature gradient. We investigated the use of poly-Si thin films combined with InP nanowires to enhance TE properties. TE power production and challenges of a large area nanowire device on a flexible metallic substrate were presented.

Electronic transport through crossed conducting polymer nanowires

2009 ◽  
Vol 24 (10) ◽  
pp. 3018-3022 ◽  
Author(s):  
Yun-Ze Long ◽  
Jean-Luc Duvail ◽  
Qing-Tao Wang ◽  
Meng-Meng Li ◽  
Chang-Zhi Gu
Keyword(s):  
Conjugated Polymer ◽  
Thermal Fluctuation ◽  
Intrinsic Resistance ◽  
Conduction Model ◽  
Linear Current ◽  
Tunneling Conduction ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
The Individual ◽  
Polymer Nanowires

In order to study the electronic properties of conjugated polymer nanowire junctions, we have fabricated two devices consisting of two crossed poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires with platinum microleads attached to each end of each nanowire. We find that the junction resistance of the crossed nanowires is much larger than the intrinsic resistance of the individual PEDOT nanowire, and increases with decreasing temperature, which can be described by a thermal fluctuation-induced tunneling conduction model. In addition, the crossed junctions show linear current-voltage characteristics at room temperature.

Non-linear current–voltage characteristics of electrically conducting carbon nanotube–polystyrene composites

2002 ◽  
Vol 4 (22) ◽  
pp. 5655-5662 ◽  
Author(s):  
P. C. P. Watts ◽  
W. K. Hsu ◽  
D. P. Randall ◽  
H. W. Kroto ◽  
D. R. M. Walton
Keyword(s):  
Carbon Nanotube ◽  
Electrically Conducting ◽  
Linear Current ◽  
Current Voltage ◽  
Non Linear ◽  
Current Voltage Characteristics

Non-linear current–voltage characteristics in α-(BEDT-TTF)2I3

2010 ◽  
Vol 405 (11) ◽  
pp. S176-S178 ◽  
Author(s):  
K. Kodama ◽  
M. Kimata ◽  
Y. Takahide ◽  
T. Terashima ◽  
H. Satsukawa ◽  
...  
Keyword(s):  
Linear Current ◽  
Current Voltage ◽  
Non Linear ◽  
Current Voltage Characteristics

Tuning the electronic and quantum transport properties of nitrogenated holey graphene nanoribbons

2017 ◽  
Vol 5 (45) ◽  
pp. 11856-11866 ◽  
Author(s):  
Aldilene Saraiva-Souza ◽  
Manuel Smeu ◽  
José Gadelha da Silva Filho ◽  
Eduardo Costa Girão ◽  
Hong Guo
Keyword(s):  
Transport Properties ◽  
Quantum Transport ◽  
Negative Differential Resistance ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Linear Current ◽  
Current Voltage ◽  
Non Linear ◽  
Current Voltage Characteristics ◽  
Peak To Valley Ratio

Strong negative differential resistance (NDR) behavior with a remarkable current peak-to-valley ratio for armchair C2N-hNRs and non-linear current–voltage characteristics for zigzag C2N-hNRs.

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