Magnetostrictive Vibration Sensor based on Iron-Gallium Alloy

2005 ◽  
Vol 888 ◽  
Author(s):  
Supratik Datta ◽  
Alison B. Flatau
Keyword(s):  
Single Crystal ◽  
Dynamic Loading ◽  
Figure Of Merit ◽  
Stress Conditions ◽  
Vibration Sensor ◽  
Bending Mode ◽  
Aluminum Beam ◽  
Static And Dynamic Loading ◽  
Gallium Alloy ◽  
Iron Gallium

ABSTRACTThis work characterizes magnetostrictive single crystal Fe84Ga16 (Galfenol) as static and dynamic sensor in bending mode. Galfenol patch bonded to a cantilevered aluminum beam was characterized for static and dynamic loading of the beam. A figure of merit has been defined and sensor parameters have been obtained for different stress conditions and Galfenol patch thickness. Issues related to application in static and dynamic sensing have been discussed.

Effect of hydrogen and magnetic field on the mechanical behavior of magnetostrictive iron–gallium alloy single crystal

2013 ◽  
Vol 578 ◽  
pp. 54-61 ◽  
Author(s):  
Meenakshisundaram Ramanathan ◽  
Biswadeep Saha ◽  
Chai Ren ◽  
Sivaraman Guruswamy ◽  
Michael K. McCarter
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Mechanical Behavior ◽  
Alloy Single Crystal ◽  
Gallium Alloy ◽  
Iron Gallium

The effect of magnetic field annealing on single crystal iron gallium alloy

2008 ◽  
Vol 103 (7) ◽  
pp. 07B325 ◽  
Author(s):  
J.-H. Yoo ◽  
J. B. Restorff ◽  
M. Wun-Fogle ◽  
A. B. Flatau
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Field Annealing ◽  
Gallium Alloy ◽  
Iron Gallium

Size Effects on Yield Instabilities in Nickel

2006 ◽  
Vol 976 ◽  
Author(s):  
Megan J Cordill ◽  
Neville R Moody ◽  
William W Gerberich
Keyword(s):  
Single Crystal ◽  
Dynamic Loading ◽  
Size Effects ◽  
Statistical Distribution ◽  
Loading Rates ◽  
Initial Loading ◽  
Diamond Indenter ◽  
Cube Corner ◽  
Load Displacement ◽  
Static And Dynamic Loading

AbstractDislocation events are seen as excursions, or pop-in events, in the load-displacement trace of nanoindentation experiments. When indenting single crystal metals these events occur frequently during quasi-static and dynamic loading. A single crystal of Ni (111) has been indented quasi-statically using three different loading rates (10, 100, and 1000 μN/s) as well as with three different radii diamond indenter tips (1000 nm cone, 300 nm Berkovich, and 50 nm cube corner) to examine the occurrences of excursions. As expected, excursions at higher loads have larger displacements, and that initial loading follows Hertzian behavior up to the point of yield. Also, as the tip size is reduced the excursion loads are reduced. The excursion events depend mostly on the statistical distribution of surface sources and substructure dislocation arrangements.

scholarly journals Damage to Shallow Tunnels under Static and Dynamic Loading

2017 ◽  
Vol 173 ◽  
pp. 1322-1329 ◽  
Author(s):  
Swapnil Mishra ◽  
K.S. Rao ◽  
N.K. Gupta ◽  
Ankeh Kumar
Keyword(s):  
Dynamic Loading ◽  
Shallow Tunnels ◽  
Static And Dynamic Loading

scholarly journals Polycrystalline SnSe with a thermoelectric figure of merit greater than the single crystal

2021 ◽  
Author(s):  
Chongjian Zhou ◽  
Yong Kyu Lee ◽  
Yuan Yu ◽  
Sejin Byun ◽  
Zhong-Zhen Luo ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
High Performance ◽  
Figure Of Merit ◽  
Waste Heat ◽  
Electric Energy ◽  
Cost Effective ◽  
Tin Selenide ◽  
Tin Oxides ◽  
Thermally Conductive

AbstractThermoelectric materials generate electric energy from waste heat, with conversion efficiency governed by the dimensionless figure of merit, ZT. Single-crystal tin selenide (SnSe) was discovered to exhibit a high ZT of roughly 2.2–2.6 at 913 K, but more practical and deployable polycrystal versions of the same compound suffer from much poorer overall ZT, thereby thwarting prospects for cost-effective lead-free thermoelectrics. The poor polycrystal bulk performance is attributed to traces of tin oxides covering the surface of SnSe powders, which increases thermal conductivity, reduces electrical conductivity and thereby reduces ZT. Here, we report that hole-doped SnSe polycrystalline samples with reagents carefully purified and tin oxides removed exhibit an ZT of roughly 3.1 at 783 K. Its lattice thermal conductivity is ultralow at roughly 0.07 W m–1 K–1 at 783 K, lower than the single crystals. The path to ultrahigh thermoelectric performance in polycrystalline samples is the proper removal of the deleterious thermally conductive oxides from the surface of SnSe grains. These results could open an era of high-performance practical thermoelectrics from this high-performance material.

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