scholarly journals High-frequency performance of scaled carbon nanotube array field-effect transistors

2012 ◽  
Vol 101 (5) ◽  
pp. 053123 ◽  
Author(s):  
Mathias Steiner ◽  
Michael Engel ◽  
Yu-Ming Lin ◽  
Yanqing Wu ◽  
Keith Jenkins ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Nanotube Array ◽  
Carbon Nanotube Array ◽  
High Frequency Performance

Polyfluorene-Sorted, Carbon Nanotube Array Field-Effect Transistors with Increased Current Density and High On/Off Ratio

ACS Nano ◽  
2014 ◽  
Vol 8 (11) ◽  
pp. 11614-11621 ◽  
Author(s):  
Gerald J. Brady ◽  
Yongho Joo ◽  
Meng-Yin Wu ◽  
Matthew J. Shea ◽  
Padma Gopalan ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Nanotube Array ◽  
Carbon Nanotube Array

scholarly journals Improving the RF Performance of Carbon Nanotube Field Effect Transistor

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
S. Hamieh
Keyword(s):  
Carbon Nanotube ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Parasitic Capacitance ◽  
Transistor Channel ◽  
Performance Limit ◽  
Rf Performance ◽  
High Frequency Performance

Compact model of single-walled semiconducting carbon nanotube field-effect transistors (CNTFETs) implementing the calculation of energy conduction subband minima under VHDLAMS simulator is used to explore the high-frequency performance potential of CNTFET. The cutoff frequency expected for a MOSFET-like CNTFET is well below the performance limit, due to the large parasitic capacitance between electrodes. We show that using an array of parallel nanotubes as the transistor channel combined in a finger geometry to produce a single transistor significantly reduces the parasitic capacitance per tube and, thereby, improves high-frequency performance.

FABRICATION OF DISPERSED ALIGNED CARBON NANOTUBE ARRAY BETWEEN METAL ELECTRODES

2006 ◽  
Vol 05 (04n05) ◽  
pp. 389-394
Author(s):  
CHANGXIN CHEN ◽  
YAFEI ZHANG
Keyword(s):  
Carbon Nanotube ◽  
Electric Field ◽  
High Frequency ◽  
Metal Electrodes ◽  
Nanotube Array ◽  
Carbon Nanotube Array ◽  
Ac Electric Field ◽  
High Volatility ◽  
Surface Decoration ◽  
High Frequency Ac

Dispersed aligned single-wall carbon nanotube (SWCNT) array has been formed between electrodes by electric field assisted alignment of surface decorated SWCNTs. The surface decoration of SWCNTs with functional molecules allows them to dispersedly bridge metal electrodes and effectively obviates the entanglement between SWCNTs. The influences of solution volatility and electric-field type on the alignment are investigated. It is indicated that the well-oriented SWCNT array can be achieved by using the high-volatility solvent and the high-frequency AC electric field to align SWCNTs.

Sign in / Sign up

Export Citation Format

Share Document