Transfer characteristics and high frequency modeling of logic gates using carbon nanotube field effect transistors (CNT-FETs)

The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nanotube between the end contacts and the edge of the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour, which leads to a significant bias dependence of the small-signal capacitances and transconductance. This could lead to high-frequency figures of merit (fT and fmax) in the terahertz regime.

Download Full-text

High-Frequency Response in Carbon Nanotube Field-Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2003.821589 ◽

2004 ◽

Vol 25 (1) ◽

pp. 34-36 ◽

Cited By ~ 45

Author(s):

D.J. Frank ◽

J. Appenzeller

Keyword(s):

Carbon Nanotube ◽

Frequency Response ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

High Frequency Response

Download Full-text

High-frequency performance of scaled carbon nanotube array field-effect transistors

Applied Physics Letters ◽

10.1063/1.4742325 ◽

2012 ◽

Vol 101 (5) ◽

pp. 053123 ◽

Cited By ~ 77

Author(s):

Mathias Steiner ◽

Michael Engel ◽

Yu-Ming Lin ◽

Yanqing Wu ◽

Keith Jenkins ◽

...

Keyword(s):

Carbon Nanotube ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Nanotube Array ◽

Carbon Nanotube Array ◽

High Frequency Performance

Download Full-text

Gate Spacer Investigation for Improving the Speed of High-Frequency Carbon Nanotube-Based Field-Effect Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c01171 ◽

2020 ◽

Vol 12 (24) ◽

pp. 27461-27466

Author(s):

Martin Hartmann ◽

Jana Tittmann-Otto ◽

Simon Böttger ◽

Georg Heldt ◽

Martin Claus ◽

...

Keyword(s):

Carbon Nanotube ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors

Download Full-text

High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419263 ◽

2005 ◽

Cited By ~ 8

Author(s):

X. Huo ◽

M. Zhang ◽

P.C.H. Chan ◽

Q. Liang ◽

Z.K. Tang

Keyword(s):

Carbon Nanotube ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Back Gate ◽

S Parameters

Download Full-text

Improving the RF Performance of Carbon Nanotube Field Effect Transistor

Journal of Nanomaterials ◽

10.1155/2012/724121 ◽

2012 ◽

Vol 2012 ◽

pp. 1-7 ◽

Cited By ~ 3

Author(s):

S. Hamieh

Keyword(s):

Carbon Nanotube ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Cutoff Frequency ◽

Parasitic Capacitance ◽

Transistor Channel ◽

Performance Limit ◽

Rf Performance ◽

High Frequency Performance

Compact model of single-walled semiconducting carbon nanotube field-effect transistors (CNTFETs) implementing the calculation of energy conduction subband minima under VHDLAMS simulator is used to explore the high-frequency performance potential of CNTFET. The cutoff frequency expected for a MOSFET-like CNTFET is well below the performance limit, due to the large parasitic capacitance between electrodes. We show that using an array of parallel nanotubes as the transistor channel combined in a finger geometry to produce a single transistor significantly reduces the parasitic capacitance per tube and, thereby, improves high-frequency performance.

Download Full-text