Photoluminescent Properties of ZnO Layers Prepared by Organometallic Chemical Vapor Deposition

1987 ◽  
Vol 102 ◽  
Author(s):  
S. Bethke ◽  
H-C Pan ◽  
B. W. Wessels
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Deep Level ◽  
Chemical Vapor ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Emission ◽  
Deposition Conditions ◽  
Organometallic Chemical Vapor Deposition

ABSTRACTZnO layers have been heteroepitaxially deposited on sapphire using organometallic chemical vapor deposition at atmospheric pressure. The quality of the layers was assessed using photoluminescence spectroscopy at 16K. The layers exhibited strong ultraviolet near bandedge luminescence. The dependence of near bandedge and deep level photoluminescence emission on deposition conditions was examined.

Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor deposition

1992 ◽  
Vol 60 (10) ◽  
pp. 1238-1240 ◽  
Author(s):  
Itaru Kamiya ◽  
H. Tanaka ◽  
D. E. Aspnes ◽  
L. T. Florez ◽  
E. Colas ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Organometallic Chemical Vapor Deposition

Characteristics of ZnO Nanowall Structures Grown on GaN Template Using Organometallic Chemical Vapor Deposition

2008 ◽  
Vol 8 (8) ◽  
pp. 3851-3856 ◽  
Author(s):  
C. C. Wu ◽  
D. S. Wuu ◽  
T. N. Chen ◽  
T. E. Yu ◽  
P. R. Lin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Sapphire Substrate ◽  
Vapor Deposition ◽  
Lattice Mismatch ◽  
Deep Level ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Band Emission ◽  
Vapor Deposition Technique ◽  
Organometallic Chemical Vapor Deposition

Uniformly distributed ZnO nanowall network structures were grown at 550 °C by organometallic chemical vapor deposition technique on the GaN/sapphire substrate without using any catalysts. In this research, we discussed the nanostructures and optical properties of ZnO samples grown under the same conditions but on different underlying materials (GaN/sapphire and sapphire). By adjusting the growth parameters, ZnO nanowall networks with a honeycomb-like pattern without using any metal catalysts were successfully fabricated on the GaN/sapphire and sapphire substrates. Since the lattice mismatch between ZnO and GaN is only about 1.8% while the lattice mismatch between ZnO and sapphire is about 18.4%. Lattice mismatch may not be the decisive factor in the formation process of ZnO nanowall networks. The ZnO grown on GaN epilayer had smaller full width at half maximum value than that of ZnO grown under the same growth condition on the sapphire substrate, indicating a higher crystal quality in the sample of ZnO on GaN. The room temperature PL measurement of both ZnO nanostructures grown on GaN and sapphire show strong ultraviolet peak intensity and high intensity ratio of the near band emission to the deep-level emission in a PL spectrum.

Formic acid and formate salts for chemical vapor deposition of copper on glass substrates under atmospheric pressure

2021 ◽  
Author(s):  
Omid Mokhtari ◽  
Fosca Conti ◽  
Rodolfo Saccon ◽  
Sri Krishna Bhogaraju ◽  
Gordon Elger
Keyword(s):  
Chemical Vapor Deposition ◽  
Formic Acid ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Glass Substrates

Chemical vapor deposition (CVD) is typically at pressures below 100 kPa, because the quality of the produced film usually degrades at higher pressures. Two approaches of CVD are presented in...

Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition

1992 ◽  
Vol 68 (5) ◽  
pp. 627-630 ◽  
Author(s):  
Itaru Kamiya ◽  
D. E. Aspnes ◽  
H. Tanaka ◽  
L. T. Florez ◽  
J. P. Harbison ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Science ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Organometallic Chemical Vapor Deposition
Sign in / Sign up

Export Citation Format

Share Document