Effects of growth interruption on the optical properties of AIGaAs/GaAs and GaAs/InGaAs quantum wells grown by atmospheric pressure organometallic chemical vapor deposition

1991 ◽  
Vol 20 (2) ◽  
pp. 197-201 ◽  
Author(s):  
Daniel C. Bertolet ◽  
Jung-Kuei Hsu ◽  
Kei May Lau ◽  
Emil S. Koteles
1987 ◽  
Vol 102 ◽  
Author(s):  
S. Bethke ◽  
H-C Pan ◽  
B. W. Wessels

ABSTRACTZnO layers have been heteroepitaxially deposited on sapphire using organometallic chemical vapor deposition at atmospheric pressure. The quality of the layers was assessed using photoluminescence spectroscopy at 16K. The layers exhibited strong ultraviolet near bandedge luminescence. The dependence of near bandedge and deep level photoluminescence emission on deposition conditions was examined.


1999 ◽  
Vol 595 ◽  
Author(s):  
Takao Someya ◽  
Katsuyuki Hoshino ◽  
Janet C. Harris ◽  
Koichi Tachibana ◽  
Satoshi Kako ◽  
...  

AbstractPhotoluminescence (PL) spectra were measured at room temperature for GaN quantum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheric-pressure metal organic chemical vapor deposition (MOCVD). The thickness of the GaN QW layers was systematically varied from one monolayer to four monolayers. We clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.


Sign in / Sign up

Export Citation Format

Share Document