Evidence of different conduction channels in bulk ZnO using f-MEMSA Analysis of transport properties

2007 ◽  
Vol 1035 ◽  
Author(s):  
Celine Tavares Chevalier ◽  
J. Rothman ◽  
G. Feuillet
Keyword(s):  
Electrical Properties ◽  
Transport Properties ◽  
Spectrum Analysis ◽  
Bulk Material ◽  
Mobility Spectrum ◽  
Annealing Conditions ◽  
Conductive Channel ◽  
Hall Effect Measurements ◽  
Heteroepitaxial Layers

AbstractThe characterization of transport properties in Zn0 is known to be challenging, particularly due to surface (in the case of bulk) or interface (in the case of heteroepitaxial layers) conduction channels, which puts severe limitations on the interpretation of Hall Effect measurements. In this communication, we report on the study of transport properties of n-type ZnO bulk material using Hall mobility spectrum analysis estimated through the algorithm known as full Maximum Entropy Mobility Spectrum Analysis, f-MEMSA. The electrical properties of bulk Zn0 are measured using a Hall setup for applied magnetic fields µ0H in the range 0T-9T and for temperatures between 50K and 400K. The f-MEMSA analysis highlights the existence of two types of conduction channels in the considered ZnO substrate. We also show that surface conductive channel can be suppressed using appropriate annealing conditions.

Quantitative mobility spectrum analysis (QMSA) for hall characterization of electrons and holes in anisotropic bands

1999 ◽  
Vol 28 (5) ◽  
pp. 548-552 ◽  
Author(s):  
I. Vurgaftman ◽  
J. R. Meyer ◽  
C. A. Hoffman ◽  
S. Cho ◽  
J. B. Ketterson ◽  
...  
Keyword(s):  
Spectrum Analysis ◽  
Mobility Spectrum ◽  
Quantitative Mobility Spectrum Analysis

Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis

2019 ◽  
Vol 98 ◽  
pp. 230-235 ◽  
Author(s):  
I.I. Izhnin ◽  
K.D. Mynbaev ◽  
A.V. Voitsekhovsky ◽  
A.G. Korotaev ◽  
I.I. Syvorotka ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Hall Effect ◽  
Spectrum Analysis ◽  
Mobility Spectrum ◽  
Hall Effect Measurements ◽  
Induced Defects

Advanced magneto-transport characterization of LPE-grown Hg1-xCdx Te by quantitative mobility spectrum analysis

1996 ◽  
Vol 25 (8) ◽  
pp. 1157-1164 ◽  
Author(s):  
J. R. Meyer ◽  
C. A. Hoffman ◽  
F. J. Bartoli ◽  
J. Antoszewski ◽  
L. Faraone ◽  
...  
Keyword(s):  
Spectrum Analysis ◽  
Mobility Spectrum ◽  
Quantitative Mobility Spectrum Analysis

Demonstration of Improved Quantitative Mobility Spectrum Analysis (i-QMSA)

1997 ◽  
Vol 490 ◽  
Author(s):  
I. Vurgaftman ◽  
J. R. Meyer ◽  
C. A. Hoffman ◽  
D. Redfern ◽  
J. Antoszewski ◽  
...  
Keyword(s):  
Spectrum Analysis ◽  
Real Data ◽  
Semiconductor Materials ◽  
Data Sets ◽  
Mobility Spectrum ◽  
Data Set ◽  
Standard Tool ◽  
Field Dependent ◽  
Quantitative Mobility Spectrum Analysis

ABSTRACTWe discuss an improved quantitative mobility spectrum analysis (i-QMSA) of magnetic-field-dependent Hall and resistivity data, which can determine multiple electron and hole densities and mobilities. A fully automated computer implementation of i-QMSA is applied to a variety of synthetic and real data sets. The results show that the new algorithm increases the information available from a given data set and is suitable for use as a standard tool in the characterization of semiconductor materials and devices.

scholarly journals Electronic transport characterization of AlGaN∕GaN heterostructures using quantitative mobility spectrum analysis

2007 ◽  
Vol 91 (10) ◽  
pp. 102113 ◽  
Author(s):  
S. B. Lisesivdin ◽  
A. Yildiz ◽  
S. Acar ◽  
M. Kasap ◽  
S. Ozcelik ◽  
...  
Keyword(s):  
Spectrum Analysis ◽  
Electronic Transport ◽  
Mobility Spectrum ◽  
Quantitative Mobility Spectrum Analysis

scholarly journals Electrical Characterization of Sige Thin Films

1991 ◽  
Vol 234 ◽  
Author(s):  
J. A. Mccormack ◽  
J.-P. Fleurial
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Liquid Phase ◽  
Electrical Properties ◽  
Hall Coefficient ◽  
Liquid Phase Epitaxy ◽  
Bulk Material ◽  
Electrical Characterization ◽  
Temperature Range

ABSTRACTAn apparatus for measuring electrical resistivity and Hall coefficient on both thin films and bulk material over a temperature range of 300K to 1300K has been built. A unique alumina fixture, with four molybdenum probes, allows arbitrarily shaped samples, up to 2.5 cm diameter, to be measured using van der Pauw's method. The system is fully automated and is constructed with commercially available components. Measurements of the electrical properties of doped and undoped Si-Ge thin films, grown by liquid phase epitaxy reported here, are to illustrate the capabilities of the apparatus.

Mbe Growth and Characterization of Lwir HgCdTe

1989 ◽  
Vol 161 ◽  
Author(s):  
M.B. Lee ◽  
J. Decarlo ◽  
D. Dimarzio ◽  
M. Kesselman
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Molecular Beam ◽  
High Mobility ◽  
Optical And Electrical Properties ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Hall Effect Measurements ◽  
Exafs Study

ABSTRACTWe have grown high-mobility LWIR HgCdTe thin films on CdTe substrates, using molecular beam epitaxy (MBE). The structural, optical, and electrical properties of these epilayers were determined by SEM, DCRC, FTIR, and Hall effect measurements. For films of 10 to 11 µm thick and composition X value ranging from 0.152 to 0.172, the highest mobility observed was 7.5 × 105 cm2 /V-sec, and the FWHMs of the rocking curves were 75 to 110 arcsec. We also have carried out the temperature-dependent EXAFS study of HgCdTe.

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