MOVPE of m-plane InGaN/GaN Buffer and LED Structures on γ-LiAlO2

2008 ◽  
Vol 1068 ◽  
Author(s):  
H. Behmenburg ◽  
C. Mauder ◽  
L. Rahimzadeh Khoshroo ◽  
T.C. Wen ◽  
Y. Dikme ◽  
...  

ABSTRACTWe report on deposition and properties of m-plane GaN/InGaN/AlInN structures on LiAlO2 substrates grown by metal organic vapor phase epitaxy (MOVPE). At first, two different buffer structures, one of them including an m-plane AlInN interlayer, were investigated concerning their suitability for the subsequent coalesced single-phase m-plane GaN growth. A series of quantum well structures with different well thickness based on one of these buffers showed absence of polarization-induced electric fields verified by room temperature photoluminescence (RT PL) measurements at different excitation intensities. Furthermore, polarization-resolved PL measurements revealed a high degree of polarization (DoP) of the emitted light with an intensity ratio of 8:1 between light polarized perpendicular and parallel to the c-axis.

2011 ◽  
Vol 23 (12) ◽  
pp. 774-776 ◽  
Author(s):  
A B Krysa ◽  
D G Revin ◽  
J P Commin ◽  
C N Atkins ◽  
K Kennedy ◽  
...  

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JL10 ◽  
Author(s):  
Liyang Zhang ◽  
Ruben R. Lieten ◽  
Magdalena Latkowska ◽  
Michał Baranowski ◽  
Robert Kudrawiec ◽  
...  

2005 ◽  
Vol 86 (9) ◽  
pp. 092106 ◽  
Author(s):  
H. D. Sun ◽  
A. H. Clark ◽  
S. Calvez ◽  
M. D. Dawson ◽  
Y. N. Qiu ◽  
...  

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