The Promotion of Metal/Polymer Adhesion by Ion Beam Enhanced Deposition

ABSTRACTThe adhesion between metals and polymers is normally weak because they have drastically different electronic properties and interfacial bonding between metals and organic polymers is not readily affected by conventional coating techniques. The ion beam enhanced deposition (IBED) approach to improve adhesion focuses on the promotion of non-equilibrium “interdiffusion” and the creation of nucleation sites at the interfaces by low energy ion bombardment before and during metal deposition onto the polymer substrate.The results of our work show a significant improvement of adhesion at the metal (Au)/polymer (Teflon) interface.

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Electronic properties of silicon-nitride films deposited by low-energy ion-beam bombardment

Applied Physics A ◽

10.1007/bf01542876 ◽

1995 ◽

Vol 61 (6) ◽

pp. 643-644 ◽

Cited By ~ 1

Author(s):

Zhong-Min Ren ◽

Fang Lu ◽

Yuan-Cheng Du ◽

Zhi-Feng Ying ◽

Fu-Ming Li

Keyword(s):

Silicon Nitride ◽

Electronic Properties ◽

Ion Beam ◽

Low Energy ◽

Silicon Nitride Films

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Position Controlled GaN Nano-Structures Fabricated by Low Energy Focused Ion Beam System.

MRS Proceedings ◽

10.1557/proc-792-r9.39 ◽

2003 ◽

Vol 792 ◽

Author(s):

Takahiro Nagata ◽

Parhat Ahmet ◽

Takashi Koida ◽

Shigefusa F. Chichibu ◽

Toyohiro Chikyow

Keyword(s):

Nitrogen Source ◽

Focused Ion Beam ◽

Ion Beam ◽

Surface Treatments ◽

Low Energy ◽

Atomic Nitrogen ◽

Sem Observation ◽

Nano Structures ◽

Beam System ◽

Nucleation Sites

ABSTRACTWe have demonstrated position controlled GaN nano structures with a combination of surface treatments and nucleation sites control assisted by low energy focused ion beam. Ga ions in the range of 100 eV - 10 keV were irradiated onto the surface of the As-terminated Si (100) to create the nucleation sites. The deposited Ga atoms migrated on the surface and were trapped at the nucleation sites to form Ga droplets. Subsequently an excited atomic nitrogen source was supplied to the surface. By SEM observation, the GaN microcrystals of diameter about 800 nm were found to be allocated every 2 μm periodically on the substrates, and cathodoluminescence peaks from GaN nano structures were observed.

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Electronic properties of silicon-nitride films deposited by low-energy ion-beam bombardment

Applied Physics A ◽

10.1007/s003390050253 ◽

1995 ◽

Vol 61 (6) ◽

pp. 643-644

Author(s):

Zhong-Min Ren ◽

Fang Lu ◽

Yuan-Cheng Du ◽

Zhi-Feng Ying ◽

Fu-Ming Li

Keyword(s):

Silicon Nitride ◽

Electronic Properties ◽

Ion Beam ◽

Low Energy ◽

Silicon Nitride Films

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Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

MRS Proceedings ◽

10.1557/proc-223-215 ◽

1991 ◽

Vol 223 ◽

Cited By ~ 3

Author(s):

Richard B. Jackman ◽

Glenn C. Tyrrell ◽

Duncan Marshall ◽

Catherine L. French ◽

John S. Foord

Keyword(s):

Ion Beam ◽

Ion Beams ◽

Low Energy ◽

Ion Beam Etching ◽

Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

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Analysis of Al-over-Cu Bond Pad Hillock and Pit Hole Defects

ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2005p0031 ◽

2005 ◽

Author(s):

Daniel Cavasin ◽

Abdullah Yassine

Keyword(s):

Focused Ion Beam ◽

Galvanic Corrosion ◽

Process Analysis ◽

Ion Beam ◽

Metal Corrosion ◽

Process Characterization ◽

Nucleation Sites ◽

Hole Defects ◽

Bond Pads ◽

Sawing Process

Abstract Bond pad metal corrosion was observed during assembly process characterization of a 0.13um Cu microprocessor device. The bond pad consisted of 12kÅ of Al-0.5%Cu atop 9kÅ of Cu, separated by a thin Ta diffusion barrier. The corrosion was first noted after the wafer dicing process. Analysis of the pad surface revealed pitting-type corrosion, consistent with published reports of classic galvanic cell reactions between Al2Cu (theta phase) particles and the surrounding Al pad metal. Analysis of the bond pads on samelot wafers which had not been diced showed higher-thanexpected incidence of hillock and pit hole defects on the Al surface. Statistically designed experiments were formulated to investigate the possibility that the observed pre-saw pad metal defects act as nucleation sites for galvanic corrosion during the sawing process. Analyses of the experimental samples were conducted using optical and scanning electron microscopy, along with focused ion beam deprocessing and energy dispersive X-ray. This paper explores the relationship between the presence of these pre-existing defects and the propensity for the bond pads to corrode during the dicing process, and reviews the conditions under which pit hole defects are formed during the final stages of the Cu-metallized wafer fabrication process. Indications are that strict control of wafer fab backend processes can reduce or eliminate the incidence of such defects, resulting in elimination of bond pad corrosion in the wafer dicing process.

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TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2011p0305 ◽

2011 ◽

Author(s):

Liew Kaeng Nan ◽

Lee Meng Lung

Keyword(s):

Sample Preparation ◽

Semiconductor Device ◽

Ion Beam ◽

Critical Dimension ◽

Low Energy ◽

Ex Situ ◽

Good Image Quality ◽

Ion Beam Etching ◽

Device Structures ◽

Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

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