scholarly journals Evaluation of Four Imaging Techniques for the Electrical Characterization of Solar Cells

2008 ◽  
Vol 1123 ◽  
Author(s):  
Gregory M. Berman ◽  
Nathan J. Call ◽  
Richard K. Ahrenkiel ◽  
Steven W. Johnston
Keyword(s):  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Imaging Techniques ◽  
Electrical Characterization ◽  
Minority Carrier Lifetime ◽  
Industry Standards ◽  
Lock In

AbstractWe evaluate four techniques that image minority carrier lifetime, carrier diffusion length, and shunting in solar cells. The techniques include photoluminescence imaging, carrier density imaging, electroluminescence imaging, and dark lock-in thermography shunt detection. We compare these techniques to current industry standards and show how they can yield similar results with higher resolution and in less time.

Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

1995 ◽  
Vol 403 ◽  
Author(s):  
R. Venkatasubramanian ◽  
B. O'Quinn ◽  
J. S. Hills ◽  
M. L. Timmons ◽  
D. P. Malta
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cross Sectional ◽  
Plan View ◽  
Electron Beam Induced Current ◽  
Induced Defects

AbstractThe characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AIGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grainstructures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

scholarly journals Characterization of high-quality kerfless epitaxial silicon for solar cells: Defect sources and impact on minority-carrier lifetime

2018 ◽  
Vol 483 ◽  
pp. 57-64 ◽  
Author(s):  
Maulid M. Kivambe ◽  
Douglas M. Powell ◽  
Sergio Castellanos ◽  
Mallory Ann Jensen ◽  
Ashley E. Morishige ◽  
...  
Keyword(s):  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Epitaxial Silicon ◽  
High Quality

Electrical Characterization of Silicon With Buried Defects

1987 ◽  
Vol 104 ◽  
Author(s):  
J. Honeycutt ◽  
Z. Radzimski ◽  
R. R. Kola ◽  
A. S. M. Salih ◽  
G. A. Rozgonyi
Keyword(s):  
Cross Sections ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Electrical Characterization ◽  
Minority Carrier Lifetime ◽  
Misfit Dislocations ◽  
Epitaxial Silicon ◽  
Electrical Behavior ◽  
Generation Lifetime

ABSTRACTDepth-dependent electrical characterization of epitaxial silicon extrinsically gettered with intentionally introduced misfit dislocations is described. To study the effect of buried defects on minority carrier lifetime, a modified Zerbst analysis of the MOS capacitance vs. time response was used to determine generation lifetime as a function of space charge region width. In addition, SEMEBIC imaging at different electron beam energies and EBIC imaging of cross-sections were used to investigate the depth-dependent electrical behavior of these materials.

Minority carrier lifetime and diffusion length in type II superlattice barrier devices

2019 ◽  
Vol 96 ◽  
pp. 155-162 ◽  
Author(s):  
P.C. Klipstein ◽  
Y. Benny ◽  
S. Gliksman ◽  
A. Glozman ◽  
E. Hojman ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
And Diffusion

scholarly journals Minority Carrier Lifetime Measurement in Nanowire Based Solar Cells by a Reverse Recovery Transient Method

2014 ◽  
Vol 60 ◽  
pp. 181-190
Author(s):  
M. Daanoune ◽  
D. Kohen ◽  
A. Kaminski-Cachopo ◽  
C. Morin ◽  
P. Faucherand ◽  
...  
Keyword(s):  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurement ◽  
Transient Method

Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers

2007 ◽  
Vol 131-133 ◽  
pp. 1-8 ◽  
Author(s):  
Nathan Stoddard ◽  
Bei Wu ◽  
Ian Witting ◽  
Magnus C. Wagener ◽  
Yongkook Park ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystal Growth ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Single Crystal Silicon ◽  
Minority Carrier Lifetime ◽  
Crystal Silicon ◽  
Growth Method ◽  
Screen Print ◽  
The Impact

A novel crystal growth method has been developed for the production of ingots, bricks and wafers for solar cells. Monocrystallinity is achievable over large volumes with minimal dislocation incorporation. The resulting defect types, densities and interactions are described both microscopically for wafers and macroscopically for the ingot, looking closely at the impact of the defects on minority carrier lifetime. Solar cells of 156 cm2 size have been produced ranging up to 17% in efficiency using industrial screen print processes.

The Heteroepitaxy and Characterization of Inp and GaInP on Silicon for Solar Cell Applications

1990 ◽  
Vol 198 ◽  
Author(s):  
M.M. Al-Jassim ◽  
R.K. Ahrenkiel ◽  
M.W. Wanlass ◽  
J.M. Olson ◽  
S.M. Vernon
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Defect Density ◽  
Minority Carrier Lifetime ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Si Substrates ◽  
Threading Dislocation Density ◽  
Direct Growth

ABSTRACTInP and GaInP layers were heteroepitaxially grown on (100) Si substrates by atmospheric pressure MOCVD. TEM and photoluminescence (PL) were used to measure the defect density and the minority carrier lifetime in these structures. The direct growth of InP on Si resulted in either polycrystalline or heavily faulted single-crystal layers. The use of GaAs buffer layers in InP/Si structures gave rise to significantly improved morphology and reduced the threading dislocation density. The best InP/Si layers in this study were obtained by using GaAs-GaInAs graded buffers. Additionally, the growth of high quality GaInP on Si was demonstrated. The minority carrier lifetime of 7 ns in these layers is the highest of any III-V/Si semiconductor measured in our laboratory.

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