Fabrication and Characterization of High Aspect Ratio Conducting Polymer Fibers

2009 ◽  
Vol 1240 ◽  
Author(s):  
Miguel A. Saez ◽  
Lauren Montemayor ◽  
Priam Vasudevan Pillai ◽  
Ian W Hunter

AbstractElectroactive conducting polymers are currently studied for use in smart textiles that incorporate sensing, actuation, control, and data transmission. The development of intelligent garments that integrate these various functionalities over wide areas (i.e. the human body) requires the production of long, highly conductive, and mechanically robust fibers. This study focuses on the electrical, mechanical and electrochemical characterization of high aspect ratio polypyrrole fibers produced using a novel, custom-built fiber slicing instrument. In order to ensure high conductivity and mechanical robustness, the fibers are sliced from tetra-ethylammonium hexafluorophosphate-doped polypyrrole thin films electrodeposited onto a glassy carbon crucible. The computer-controlled, four-axis slicing instrument precisely cuts the film into thin, long fibers by running a sharp blade over the crucible in a continuous helical pattern. This versatile fabrication process has been used to produce free-standing fibers with square cross-sections of 2 μm × 3 μm, 20 μm × 20 μm, and 100 μm × 20 μm with lengths of 15 mm, 460 mm, and 1,200 mm, respectively. An electrochemical dynamic mechanical analyzer built in-house for nano- and microfiber testing was used to perform stress-strain and conductivity measurements in air. The fibers were found to, on average, have an elastic modulus of 1.7 GPa, yield strength of 37 MPa, ultimate tensile strength of 80 MPa, elongation at break of 49%, and an electrical conductivity of 12,700 S/m. SEM micrographs show that the fibers are free of defects and have cleanly cut edges. Preliminary measurements of the fibers’ strain-resistance relationship have resulted in gage factors suitable for strain sensing applications. Initial tests of the actuation performance of fibers in neat 1-butyl-3-methylimidazolium hexaflourophosphate have shown promising results. These monofilament fibers may be spun into yarns or braided into 2- and 3-dimensional structures for use as actuators, sensors, antennae, and electrical interconnects in smart fabrics.

2012 ◽  
Vol 1512 ◽  
Author(s):  
Jian-Wei Ho ◽  
Qixun Wee ◽  
Jarrett Dumond ◽  
Li Zhang ◽  
Keyan Zang ◽  
...  

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.


2011 ◽  
Vol 25 ◽  
pp. 1669-1672 ◽  
Author(s):  
Umesh Singh ◽  
Hyun Ae Lee ◽  
Young-Chul Byun ◽  
Amit Kumar ◽  
Sudipta Seal ◽  
...  

2012 ◽  
Vol 22 (5) ◽  
pp. 055021 ◽  
Author(s):  
Pradeep Dixit ◽  
Tapani Vehmas ◽  
Sami Vähänen ◽  
Philippe Monnoyer ◽  
Kimmo Henttinen

2015 ◽  
Vol 54 (32) ◽  
pp. 9422 ◽  
Author(s):  
Nojan Motamedi ◽  
Salman Karbasi ◽  
Joseph E. Ford ◽  
Vitaliy Lomakin

2010 ◽  
Vol 2010 (1) ◽  
pp. 000703-000706
Author(s):  
Colin Stevens ◽  
Robert Dean ◽  
Samuel Lawrence ◽  
Lee Levine

The Bosch Deep Reactive Ion Etch Process is commonly used for the manufacture of MEMS and MOEMS devices that require deep high aspect ratio trenches. In many cases fully released, high aspect ratio features can be generated in one pass. However the process must be understood to avoid generating some of the defect structures that are characteristic of the process. Defects such as scalloping, silicon grass, and undercutting at the interface of a nonconductive layer can be controlled by process parameters and optimization. Measurement and characterization of the defective structures is a key element of controlling them. The use of SEM measurement techniques for characterizing the small features associated with scalloping and silicon grass is essential. No other technique is capable of providing the large depth of focus required to visualize these features. The use of metallographic techniques furthers understanding of the surface conditions on the side walls of these deep trenches.


Micromachines ◽  
2020 ◽  
Vol 11 (4) ◽  
pp. 378 ◽  
Author(s):  
Hailiang Li ◽  
Changqing Xie

We report a robust, sidewall transfer metal assistant chemical etching scheme for fabricating Al2O3 nanotube arrays with an ultra-high aspect ratio. Electron beam lithography followed by low-temperature Au metal assisted chemical etching (MacEtch) is used to pattern high resolution, high aspect ratio, and vertical silicon nanostructures, used as a template. This template is subsequently transferred by an atomic layer deposition of the Al2O3 layer, followed by an annealing process, anisotropic dry etching of the Al2O3 layer, and a sacrificial silicon template. The process and characterization of the Al2O3 nanotube arrays are discussed in detail. Vertical Al2O3 nanotube arrays with line widths as small as 50 nm, heights of up to 21 μm, and aspect ratios up to 420:1 are fabricated on top of a silicon substrate. More importantly, such a sidewall transfer MacEtch approach is compatible with well-established silicon planar processes, and has the benefits of having a fully controllable linewidth and height, high reproducibility, and flexible design, making it attractive for a broad range of practical applications.


2006 ◽  
Vol 179 (3) ◽  
pp. 708-715 ◽  
Author(s):  
Qi Tao ◽  
Yuanming Zhang ◽  
Xiang Zhang ◽  
Peng Yuan ◽  
Hongping He

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