Annealing Effects on Si Nanocrystal Nonvolatile Memories

2010 ◽  
Vol 1250 ◽  
Author(s):  
Panagiotis Dimitrakis ◽  
Caroline Bonafos ◽  
Sylvie Schamm ◽  
Pascal Normand ◽  
G. Ben Assayag
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Charge Trapping ◽  
Low Energy ◽  
Thermal Treatments ◽  
High Temperature Annealing ◽  
Nonvolatile Memories ◽  
Structural And Electrical Properties ◽  
Si Nanocrystal ◽  
Annealing Effects

AbstractThe effect of thermal treatments in oxidizing ambient on the structural and electrical properties of low-energy Si-implanted thin SiO2 layers which previously suffered or not high temperature annealing in inert ambient was investigated. Based on TEM examination, charge trapping evaluation and FN conduction analysis of the resulting Si-NC SiO2 matrices, a model taking into account the healing of excess silicon atoms introduced by implantation and the generation of Si interstitials by oxidation above and below the viscoelastic temperature of SiO2 is proposed.

High-temperature annealing effects on molybdenum–silicon contact substrate for vertically structured silicon quantum-dot solar cells

2018 ◽  
Vol 9 (2) ◽  
pp. 135-142
Author(s):  
Xuguang Jia ◽  
Ziyun Lin ◽  
Terry Chien-Jen Yang ◽  
Tian Zhang ◽  
Binesh Puthen-Veettil ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Temperature ◽  
Quantum Dot ◽  
High Temperature Annealing ◽  
Silicon Quantum Dot ◽  
Quantum Dot Solar Cells ◽  
Annealing Effects

scholarly journals Исследование нелегированных нанокристаллических алмазных пленок, выращенных из газовой фазы в плазме СВЧ разряда

2021 ◽  
Vol 55 (1) ◽  
pp. 49
Author(s):  
А.Л. Вихарев ◽  
С.А. Богданов ◽  
Н.М. Овечкин ◽  
О.А. Иванов ◽  
Д.Б. Радищев ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Inert Gas ◽  
Dielectric Films ◽  
High Temperature Annealing ◽  
Structural And Electrical Properties ◽  
Methane Mixture

Undoped nanocrystalline diamond (NCD) films less than 1 μm thick grown on Si (100) silicon by microwave plasma-assisted chemical vapor deposition at a frequency of 2.45 GHz are studied. To obtain diamond dielectric films with maximum resistivity the deposition of films in three gas mixtures is investigated: hydrogen-methane mixture, hydrogen-methane mixture with the addition of oxygen and hydrogen-methane mixture with the addition of an inert gas. A relationship has been established between the growth conditions, structural and electrical properties of NCD films. It is shown that for the use of NCD films as effective dielectrics preliminary high-temperature annealing of the films is required, for example, in vacuum at a temperature of 600°C for one hour.

High temperature annealing effects on optical performance of TiAlN-based solar selective absorber with TiN IR reflector

Vacuum ◽  
2021 ◽  
pp. 110836
Author(s):  
Lingheng Xiong ◽  
Yan Liu ◽  
Zhaoyu He ◽  
Xingyu Shao ◽  
Dianqing Gong ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
Optical Performance ◽  
Annealing Effects
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