High-temperature-annealing effects on the electrical properties of RF sputtered SnO2 thin films for microelectronic sensors

Vacuum ◽  
1996 ◽  
Vol 47 (11) ◽  
pp. 1325-1328 ◽  
Author(s):  
SK Andreev ◽  
LI Popova ◽  
VK Gueorguiev ◽  
EB Manolov
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Electrical Properties ◽  
High Temperature Annealing ◽  
Annealing Effects ◽  
Sno2 Thin Films

High temperature annealing effects on chromel (Ni90Cr10) thin films and interdiffusion study for sensing applications

2008 ◽  
Vol 516 (12) ◽  
pp. 4307-4311 ◽  
Author(s):  
Arindom Datta ◽  
Xudong Cheng ◽  
Michael A. Miller ◽  
Xiaochun Li
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Temperature Annealing ◽  
Sensing Applications ◽  
Annealing Effects

FT-IR analysis of high temperature annealing effects in a-SiC:H thin films

2017 ◽  
Author(s):  
Tobias Frischmuth ◽  
Michael Schneider ◽  
Thomas Grille ◽  
U. Schmid
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Temperature Annealing ◽  
Annealing Effects ◽  
Ft Ir ◽  
Ir Analysis

Annealing Effects on Si Nanocrystal Nonvolatile Memories

2010 ◽  
Vol 1250 ◽  
Author(s):  
Panagiotis Dimitrakis ◽  
Caroline Bonafos ◽  
Sylvie Schamm ◽  
Pascal Normand ◽  
G. Ben Assayag
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Charge Trapping ◽  
Low Energy ◽  
Thermal Treatments ◽  
High Temperature Annealing ◽  
Nonvolatile Memories ◽  
Structural And Electrical Properties ◽  
Si Nanocrystal ◽  
Annealing Effects

AbstractThe effect of thermal treatments in oxidizing ambient on the structural and electrical properties of low-energy Si-implanted thin SiO2 layers which previously suffered or not high temperature annealing in inert ambient was investigated. Based on TEM examination, charge trapping evaluation and FN conduction analysis of the resulting Si-NC SiO2 matrices, a model taking into account the healing of excess silicon atoms introduced by implantation and the generation of Si interstitials by oxidation above and below the viscoelastic temperature of SiO2 is proposed.

Fabrication and electrical properties of polymer-derived ceramic (PDC) thin films for high-temperature heat flux sensors

2011 ◽  
Vol 165 (2) ◽  
pp. 250-255 ◽  
Author(s):  
Duckbong Seo ◽  
Sunghoon Jung ◽  
Stephen J. Lombardo ◽  
Z.C. Feng ◽  
J.K. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Flux ◽  
High Temperature ◽  
Electrical Properties ◽  
Heat Flux Sensors ◽  
Polymer Derived Ceramic ◽  
Temperature Heat
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