He+ Implanted Stripe Optical Waveguides in LiNbo3

1988 ◽  
Vol 126 ◽  
Author(s):  
B. L. Weiss ◽  
G. T. Reed
Keyword(s):  
Optical Waveguides ◽  
Fabrication Process ◽  
Propagation Losses ◽  
Te And Tm Modes

ABSTRACTIn this paper the fabrication process and characteristics of waveguides produced by He+ implantation in Y-cut X- and Z-propagating LiNbO3 are presented It is shown that low propagation losses, down to 1dB cm−1 at λ = 633μm can be obtained for TM modes only in Y-cut X-propagation samples whilst Y-cut Z propagating samples support both TE and TM modes with relatively low losses.

Fabrication and Characterisation of Reverse Proton Exchange Optical Waveguides in Neodymium Doped Lithium Niobate Crystals

2005 ◽  
Vol 480-481 ◽  
pp. 429-436
Author(s):  
M. Domenech ◽  
G. Lifante ◽  
F. Cussó ◽  
A. Parisi ◽  
A.C. Cino ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Optical Waveguides ◽  
Spectroscopic Properties ◽  
Proton Exchange ◽  
Fabrication Process ◽  
The Other ◽  
Ion Plating ◽  
Other Hand ◽  
Channel Waveguides ◽  
Lithium Niobate Crystals

In this work, the complete fabrication process which combines Proton Exchange (PE) and Reverse Proton Exchange (RPE) in Neodymium doped LiNbO3 channel waveguides is reported. To produce the PE-RPE channel waveguides the fabrication of dielectric SiO2 masks had to be implemented. For this propose, we adopted a technique based on the Ion Plating Plasma Assisted Deposition of SiO2 followed by the standard ultraviolet photolithographic patterning. On the other hand, we determined the main optical and spectroscopic properties of Nd3+ ions in the channel waveguides including the study of the lifetime as function as the polarisation.

scholarly journals Analysis and optimization of propagation losses in LiNbO3 optical waveguides produced by swift heavy-ion irradiation

2012 ◽  
Vol 107 (1) ◽  
pp. 157-162 ◽  
Author(s):  
M. Jubera ◽  
J. Villarroel ◽  
A. García-Cabañes ◽  
M. Carrascosa ◽  
J. Olivares ◽  
...  
Keyword(s):  
Optical Waveguides ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Propagation Losses

Cold Deposition of Zinc Sulfide Optical Waveguides Using Thermoelectric Device

2011 ◽  
Vol 264-265 ◽  
pp. 856-861 ◽  
Author(s):  
Saafie Salleh ◽  
Harvey N. Rutt ◽  
M.N. Dalimin ◽  
Muhamad Mat Salleh
Keyword(s):  
Zinc Sulfide ◽  
Optical Waveguides ◽  
Thermoelectric Device ◽  
Force Microscopy ◽  
Prism Coupler ◽  
Atomic Force ◽  
Propagation Losses ◽  
Evaporation Technique ◽  
Scanning Detection ◽  
Zns Films

Zinc sulfide (ZnS) thin films as the waveguide medium have been deposited onto oxidized silicon wafer substrates at cold temperature (Tcold = –50oC) and ambient temperature (Tambient = 25oC) by thermal evaporation technique. The surface morphology of ZnS films were pictured with an atomic force microscopy (AFM) and the surface roughness were calculated from the AFM images. The propagation losses of the samples were measured using a scanning detection technique attached to a prism coupler. The AFM results revealed that the surface of cold deposited ZnS film is rougher than the surface of ambient deposited ZnS film. The propagation losses of the cold deposited ZnS waveguide are consistently lower than the ambient deposited ZnS waveguide at all measured wavelengths.

Process Modeling, Optimization and Characterization of Silicon Optical Waveguides by Anisotropic Wet Etching

2011 ◽  
Vol 403-408 ◽  
pp. 4295-4299
Author(s):  
H. Hazura ◽  
A.R. Hanim ◽  
B. Mardiana ◽  
Sahbudin Shaari ◽  
P.S. Menon
Keyword(s):  
Optical Waveguide ◽  
Optical Waveguides ◽  
Photonic Devices ◽  
Wet Etching ◽  
Fabrication Process ◽  
Etching Time ◽  
Optical Modulators ◽  
Silicon Waveguide ◽  
Simulation And Experiment ◽  
Silicon Based

We present a detailed fabrication process of silicon optical waveguide with a depth of 4μm via simulation and experiment. An anisotropic wet etching using Potassium Hydroxide (KOH) solutions was selected to study the influence of major fabrication parameters such as etch rate, oxidation time and development time to the fabrication performance. The fabrication of the silicon waveguide with the orientation of was modeled using ATHENA from 2D Silvaco software and was later compared with the actual fabricated device. Etching time of 4 minutes was required to etch the Si to the depth of 4μm to obtain a perfectly trapeizoidal optical waveguide structure. Our results show that the simulation model is trustworthy to predict the performance of the practical anisotropic wet etching fabrication process. The silicon-based waveguide components are targeted to be employed in realizing future photonic devices such as optical modulators.

Synthesis of UV-Writing Fluorinated Polymer for Organic Optical Waveguide

2013 ◽  
Vol 690-693 ◽  
pp. 1604-1608
Author(s):  
Xu Fei ◽  
Shu Qi Fan ◽  
Jing Tian ◽  
Yi Wang
Keyword(s):  
Refractive Index ◽  
Epoxy Resin ◽  
Polymer Film ◽  
Optical Waveguide ◽  
Optical Waveguides ◽  
Uv Light ◽  
Uv Exposure ◽  
Propagation Losses ◽  
Channel Waveguides ◽  
Uv Writing

UV-Writing Poly(FPS-co-GMA) for optical waveguide was synthesized and the refractive index of the polymer film was tuned in the range of 1.460~1.555 at 1550 nm by mixing with bis-phenol-A epoxy resin. The film, which was made by spinning coated the Poly(FPS-co-GMA) with photo initiator, had good UV light lithograph sensitivity. The optical waveguides with very smooth top surface were fabricated from the resulting polymer by direct UV exposure and chemical development. The propagation losses of the channel waveguides were measured to be below 0.6 dB/cm at 1550 nm.

Optical Characteristics of Planar Waveguides in Simox Structures

1991 ◽  
Vol 244 ◽  
Author(s):  
G T Reed ◽  
A G Rickman ◽  
B L Weiss ◽  
F Namavar ◽  
E Cortesi ◽  
...  
Keyword(s):  
Optical Waveguides ◽  
Planar Waveguides ◽  
Propagation Loss ◽  
Optical Characteristics ◽  
Propagation Losses ◽  
Planar Optical Waveguides

ABSTRACTResults are presented for the propagation loss of planar optical waveguides fabricated in SIMOX structures with Si overlayers whose thickness varies from 0.57 μm to 6.0 μm. The results demonstrate that thick Si overlayers are required to produce propagation losses below 1 dB/cm. In addition, the results of the coupling between two vertically integrated waveguides formed using two buried SiO2 layers are also reported.

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