Ejected Product Energy Distributions from Laser Ablated Solids

1988 ◽  
Vol 129 ◽  
Author(s):  
H. Helvajian ◽  
R. P. Welle
Keyword(s):  
Laser Ablation ◽  
Kinetic Energy ◽  
Product Formation ◽  
Uv Laser ◽  
Energy Distributions ◽  
Laser Threshold ◽  
Ion Kinetic Energy ◽  
The Mean ◽  
Mean Kinetic Energy ◽  
Kinetic Energy Distributions

ABSTRACTAt laser threshold fluences near ion product formation, we have measured the ejected ion kinetic-energy distributions from the UV laser ablation of crystalline aluminum and silver targets. The mean kinetic energy is found to be hyperthermal.

Ion Kinetic Energy Distributions and Mechanisms of Pulsed Laser Ablation on Al

2008 ◽  
Vol 112 (42) ◽  
pp. 16556-16560 ◽  
Author(s):  
Jon I. Apiñániz ◽  
Borja Sierra ◽  
Roberto Martínez ◽  
Asier Longarte ◽  
Carolina Redondo ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Kinetic Energy ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Energy Distributions ◽  
Ion Kinetic Energy ◽  
Kinetic Energy Distributions

UV Tunable Laser Ablation of YBa2Cu3Ox+6: Changes in the Product Population and Kinetic Energy Distributions as a Function of the Laser Wavelength and Target Bulk Temperature

1990 ◽  
Vol 191 ◽  
Author(s):  
L. Wiedeman ◽  
H. Helvajian
Keyword(s):  
Laser Ablation ◽  
Kinetic Energy ◽  
Optical Transition ◽  
Tunable Laser ◽  
Product Formation ◽  
Laser Wavelength ◽  
Bulk Temperature ◽  
Uv Laser ◽  
Laser Fluences ◽  
Population Distributions

ABSTRACTWe have conducted two separate experiments in the UV laser ablation of a sintered Yba2Cu3Ox+6wafer. We have measured the photoejected population distributions using selected UV laser wavelengths (4.01, 4.17 and 4.35 eV) near the 4.1 eV optical transition in Yba2Cu3Ox+6 In addition, we have measured the change in the ejected species kinetic energy as a function of the target bulk temperature. All the experiments were conducted at laser fluences well below the plasma formation threshold, and near that for product formation. Our results show that the UV laser ablation, at threshold fluences, proceeds via a nonthermal electronic excitation mechanism.

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