Si-On-Sapphire and Si Implanted with Zr Ions: Lattice Location, Solid Phase Epitaxial Regrowth, and Electrical Properties

1982 ◽  
Vol 14 ◽  
Author(s):  
I. Golecki ◽  
I. Suni
Keyword(s):  
Electrical Properties ◽  
Surface Segregation ◽  
Solid Phase ◽  
Rutherford Backscattering ◽  
Lattice Location ◽  
Temperature Range ◽  
Epitaxial Regrowth ◽  
Amorphous Si ◽  
Solid Phase Regrowth

ABSTRACTZr ions have been implanted at 300 keV (Rp= 1400Å) and doses of 3×1012 − 3×l015 Zr/cm2 into Si-implanted, amorphous Sip layers on (100) bulk Si and Sion- sapphire. Rutherford backscattering and channeling spectrometry was used to study the Zr distribution and lattice location during solid-phase regrowth of the Si layers. The regrowth at 500—550°C stops at 3.4хl020 Zr/cm3, and Zr exhibits interface trapping and surface segregation effects. In this temperature range, Zr is essentially non-substitutional, and inactive electrically.

On the Role of Interfacial Defect Sites During Solid Phase Epitaxial Regrowth of Implantation Amorphized Silicon

1988 ◽  
Vol 100 ◽  
Author(s):  
W. O. Adekoya ◽  
M. Hage-Ali ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Rutherford Backscattering ◽  
Temperature Range ◽  
Interfacial Defect ◽  
A Value ◽  
Epitaxial Regrowth ◽  
Defect Sites

ABSTRACTWe have studied the solid phase epitaxial regrowth (SPER) of implantation (31P+11B+ (73Ge+ preamorphized)) amorphized silicon in the temperature range 500–600°C induced by Rapid Thermal Annealing (RTA) using Rutherford Backscattering and channeling measurements (RBS). Our results show rate enhancements (≃ 3.5–6.5) of the velocities of regrowth in all studied cases with respect to literature-reported values for furnace-induced SPER. Also, the ratio VB/VP (velocity of regrowth in the presence of boron with respect to phosphorus) gives a value of approximately 3 in both RTA and furnace-induced kinetics. These results are explained by a model which takes into account the role of electrically-active interfacial defect sites during SPER.

Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial–regrowth of amorphous Si

2012 ◽  
Vol 101 (10) ◽  
pp. 103113 ◽  
Author(s):  
F. Panciera ◽  
K. Hoummada ◽  
M. Mastromatteo ◽  
D. De Salvador ◽  
E. Napolitani ◽  
...  
Keyword(s):  
Solid Phase ◽  
Three Dimensional ◽  
Epitaxial Regrowth ◽  
Amorphous Si

Influence of carbon on erbium lattice location in Si:Er

2000 ◽  
Vol 647 ◽  
Author(s):  
X. T. Ren ◽  
M. B. Huang
Keyword(s):  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Surface Segregation ◽  
Solid Phase ◽  
Liquid Nitrogen Temperature ◽  
Lattice Location ◽  
Carbon Ions ◽  
Co Doping ◽  
Defect Complexes ◽  
Float Zone

AbstractThe 1.5 µm luminescence from Si:Er is known to strongly depend on impurities (e.g. carbon) in silicon. In this work, we investigate the effect of carbon co-doping on the lattice location of Er atoms in Si by Rutherford backscattering(RBS)/channeling techniques. A float-zone (FZ) Si (100) wafer was first amorphized to a depth of ~ 0. 3 µm by Si ions implanted to a dose of ~ 1×1015cm2 at liquid nitrogen temperature. Carbon ions were then implanted into the amorphous silicon, which was recrystallized via solid phase epitaxial growth (SPEG) at 600°C following C implant. Finally Er ions were implanted into the C-doped and C-free Si crystals, with the substrate temperature at 25°C and 300°C respectively. The RBS/channeling results show that the Er redistribution and Si crystallinity are strongly affected by C co-doping. The incorporation of C into Si can significantly suppress Er surface segregation, and modify the lattice location of Er atoms in Si. We discuss these effects in terms of the formation of Er-C defect complexes.

Influence of Ion Beam Irradiation on Solid-Phase Regrowth of Amorphous Si on SiO2

2001 ◽  
Vol 78-79 ◽  
pp. 345-348
Author(s):  
I. Tsunoda ◽  
T. Nagata ◽  
Taizoh Sadoh ◽  
A. Kenjo ◽  
Masanobu Miyao
Keyword(s):  
Solid Phase ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Amorphous Si ◽  
Solid Phase Regrowth

Nitrogen Implanted Germanium: Damage, Lattice Location, and Electrical Properties

1975 ◽  
Vol 53 (3) ◽  
pp. 303-309 ◽  
Author(s):  
A. B. Campbell ◽  
J. B. Mitchell ◽  
J. Shewchun ◽  
D. A. Thompson ◽  
J. A. Davies
Keyword(s):  
Electrical Properties ◽  
Radiation Damage ◽  
Nuclear Reactions ◽  
Lattice Location ◽  
Site Location ◽  
Temperature Range ◽  
Helium Ion ◽  
Location Study ◽  
Ion Backscattering

The radiation damage, implanted atom location, and electrical properties of nitrogen implanted germanium have been studied following anneals in the temperature range of 300–700 °C. Helium ion backscattering was used to measure the damage while two nuclear reactions, the 14N(d, α)12C and the 15N(p, α)12C, were used together with channeling techniques for the atom site location study. The results indicate that ~85% of the implanted nitrogen was located on nonsubstitutional sites, and also that the nitrogen did not outdiffuse from the germanium for anneals as high as 700 °C. The I–V characteristics of mesa structures formed in the implanted germanium indicate that, nitrogen had not become a donor in germanium.

Solid-phase regrowth of compound semiconductors by reaction-driven decomposition of intermediate phases

1988 ◽  
Vol 3 (5) ◽  
pp. 914-921 ◽  
Author(s):  
T. Sands ◽  
E. D. Marshall ◽  
L. C. Wang
Keyword(s):  
Ohmic Contacts ◽  
Intermediate Phase ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Compound Semiconductor ◽  
Semiconductor Layer ◽  
Transmission Electron Microscopy Data ◽  
Semiconductor Substrate ◽  
Epitaxial Regrowth ◽  
Solid Phase Regrowth

The solid-phase epitaxial regrowth of a III–V compound semiconductor by a two-stage reaction between a two-layer metallization and a compound semiconductor substrate is described. The regrowth process begins with a low-temperature reaction between a metal M (e.g. Ni, Pd, or Pt) and a compound semiconductor substrate, AB, to produce an intermediate M, AB or MB, phase. A subsequent reaction at a higher temperature between an overlayer of Si, Ge, Al, or In and the intermediate phase results in the decomposition of the intermediate phase and the epitaxial regrowth of a layer of the compound semiconductor. This regrowth mechanism is verified experimentally for the specific case of the Si/Ni/GaAs system. Rutherford backscattering spectrometry and transmission electron microscopy data show that the ternary phase Nix GaAs, formed during the initial stage of the reaction, decomposes toNiSi and GaAs by reaction with the Si overlayer. The incorporation of the overlayer element into the regrown semiconductor layer is proposed as a mechanism to explain the formation of Ohmic contacts in Si/Pd/n-GaAs, In/Pd/n-GaAs, In/Pt/n-GaAs, and similar two-layer metallization systems on n-GaAs.

Solid Phase Epitaxial Regrowth of Microcrystalline Si Films on a (100) Si Substrate

1988 ◽  
Vol 100 ◽  
Author(s):  
S. Roorda ◽  
S. Saito ◽  
W. C. Sinke
Keyword(s):  
Grain Size ◽  
Solid Phase ◽  
Si Substrate ◽  
Two Stage ◽  
Annealing Behaviour ◽  
Explosive Crystallization ◽  
Epitaxial Regrowth ◽  
Amorphous Si ◽  
Si Films ◽  
Size And Structure

ABSTRACTMicrocrystalline Si, as produced by explosive crystallization of an amorphous Si layer on (100) Si, shows a two-stage annealing behaviour. Initially, solid phase epitaxial regrowth occurs very rapidly at temperatures at, or above 800°C. After a few seconds, the regrowth rate slows down to the value typical for alignment of poly-Si. Solid phase epitaxial regrowth of microcrystalline Si is suggested to be strongly dependent on grain size and structure.

Solid‐phase epitaxial regrowth of Sb‐implanted Si1−xGexstrained layers: Kinetics and electrical properties

1994 ◽  
Vol 75 (8) ◽  
pp. 3936-3943 ◽  
Author(s):  
Z. Atzmon ◽  
M. Eizenberg ◽  
Y. Shacham‐Diamand ◽  
J. W. Mayer ◽  
F. Schäffler
Keyword(s):  
Electrical Properties ◽  
Solid Phase ◽  
Epitaxial Regrowth

Performance of (110) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

2011 ◽  
Vol 88 (7) ◽  
pp. 1265-1268
Author(s):  
A. Ohata ◽  
Y. Bae ◽  
T. Signamarcheix ◽  
J. Widiez ◽  
B. Ghyselen ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth

Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation

1989 ◽  
Vol 54 (1) ◽  
pp. 42-44 ◽  
Author(s):  
B. T. Chilton ◽  
B. J. Robinson ◽  
D. A. Thompson ◽  
T. E. Jackman ◽  
J.‐M. Baribeau
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Strained Layer ◽  
Epitaxial Regrowth ◽  
Layer Structures
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