Solid Phase Epitaxial Regrowth of Microcrystalline Si Films on a (100) Si Substrate

1988 ◽  
Vol 100 ◽  
Author(s):  
S. Roorda ◽  
S. Saito ◽  
W. C. Sinke
Keyword(s):  
Grain Size ◽  
Solid Phase ◽  
Si Substrate ◽  
Two Stage ◽  
Annealing Behaviour ◽  
Explosive Crystallization ◽  
Epitaxial Regrowth ◽  
Amorphous Si ◽  
Si Films ◽  
Size And Structure

ABSTRACTMicrocrystalline Si, as produced by explosive crystallization of an amorphous Si layer on (100) Si, shows a two-stage annealing behaviour. Initially, solid phase epitaxial regrowth occurs very rapidly at temperatures at, or above 800°C. After a few seconds, the regrowth rate slows down to the value typical for alignment of poly-Si. Solid phase epitaxial regrowth of microcrystalline Si is suggested to be strongly dependent on grain size and structure.

Solid Phase Crystallization of LPCVD Amorphous Si Films by Nucleation Interface Control

1996 ◽  
Vol 448 ◽  
Author(s):  
Eui-Hoon Hwang ◽  
Jae-Sang Ro
Keyword(s):  
Grain Size ◽  
Incubation Time ◽  
Solid Phase ◽  
Composite Films ◽  
Deposition Condition ◽  
Solid Phase Crystallization ◽  
Interface Control ◽  
Amorphous Si ◽  
Si Films ◽  
Deposition Conditions

AbstractA novel method for the fabrication of poly-Si films with a large grain size is reported using solid phase crystallization (SPC) of LPCVD amorphous Si films by nucleation interface control. The reference films used in this study were 1000 Ǻ -thick a-Si films deposited at 500°C at a total pressure of 0.35 Torr using Si2H6/He. Since the deposition condition changes the incubation time, i.e. nucleation rate, and since nucleation occurs dominantly at a-Si/SiO2 interface, we devised the following deposition techniques for the first time in order to obtain the larger gain size. A very thin a-Si layer (~ 50 Ǻ) with the deposition conditions having long incubation time is grown first and then the reference films (~ 950 Ǻ) are grown successively. Various composite films with different combinations were tested. The crystallization kinetics of composite films was observed to be determined by the deposition conditions of a thin a-Si layer at the a-Si/SiO2 interface. Nucleation interface was also observed to be modified by interrupted gas supply resulting in the enhancement of the grain size.

Enhancement of lateral solid phase epitaxial growth in evaporated amorphous Si films by phosphorus implantation

1985 ◽  
Vol 46 (3) ◽  
pp. 268-270 ◽  
Author(s):  
Hiroshi Yamamoto ◽  
Hiroshi Ishiwara ◽  
Seijiro Furukawa
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Amorphous Si ◽  
Si Films

Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

1992 ◽  
Author(s):  
H. Ishiwara ◽  
H. Wakabayashi ◽  
K. Miyazaki ◽  
K. Fukao ◽  
A. Sawaoka
Keyword(s):  
Solid Phase ◽  
Ultrahigh Pressure ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films

Polycrystalline Si Films Fabricated by Low Temperature Selective Nucleation and Solid Phase Epitaxy Process

1997 ◽  
Vol 485 ◽  
Author(s):  
Claudine M. Chen ◽  
Harry A. Atwater
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Crystal Growth ◽  
Incubation Time ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Grain Sizes ◽  
Random Nucleation ◽  
Nucleation Sites ◽  
Si Films

AbstractWith a selective nucleation and solid phase epitaxy (SNSPE) process, grain sizes of 10 μm have been achieved to date at 620°C in 100 nrm thick silicon films on amorphous SiO2, with potential for greater grain sizes. Selective nucleation occurs via a thin film reaction between a patterned array of 20 rnm thick indium islands which act as heterogeneous nucleation sites on the amorphous silicon starting material. Crystal growth proceeds by lateral solid phase epitaxy from the nucleation sites, during the incubation time for random nucleation. The largest achievable grain size by SNSPE is thus approximately the product of the incubation time and the solid phase epitaxy rate. Electronic dopants, such as B, P, and Al, are found to enhance the solid phase epitaxy rate and affect the nucleation rate.

Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films

1985 ◽  
Vol 24 (Part 2, No. 7) ◽  
pp. L513-L515 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Hiroshi Yamamoto ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Boron Doping ◽  
Solid Phase Epitaxy ◽  
Doping Effects ◽  
Amorphous Si ◽  
Si Films

Grain size, Grain Uniformity, and (111) Texture Enhancement by Solid-phase Crystallization of F- and C-implanted SiGe Films

2000 ◽  
Vol 15 (7) ◽  
pp. 1630-1634 ◽  
Author(s):  
A. Rodríguez ◽  
J. Olivares ◽  
C. González ◽  
J. Sangrador ◽  
T. Rodríguez ◽  
...  
Keyword(s):  
Grain Size ◽  
Vapor Deposition ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Solid Phase Crystallization ◽  
Grain Sizes ◽  
Pressure Chemical ◽  
Film Microstructure ◽  
Si Films ◽  
Size Dispersion

The crystallization kinetics and film microstructure of poly-SiGe layers obtained by solid-phase crystallization of unimplanted and C- and F-implanted 100-nm-thick amorphous SiGe films deposited by low-pressure chemical vapor deposition on thermally oxidized Si wafers were studied. After crystallization, the F- and C-implanted SiGe films showed larger grain sizes, both in-plane and perpendicular to the surface of the sample, than the unimplanted SiGe films. Also, the (111) texture was strongly enhanced when compared to the unimplanted SiGe or Si films. The crystallized F-implanted SiGe samples showed the dendrite-shaped grains characteristic of solid-phase crystallized pure Si. The structure of the unimplanted SiGe and C-implanted SiGe samples consisted of a mixture of grains with well-defined contour and a small number of quasi-dendritic grains. These samples also showed a very low grain-size dispersion.

Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films

1986 ◽  
Vol 25 (Part 1, No. 5) ◽  
pp. 667-672 ◽  
Author(s):  
Hiroshi Yamamoto ◽  
Hiroshi Ishiwara ◽  
Seijiro Furukawa
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Orientation Dependence ◽  
Amorphous Si ◽  
Si Films

High-Quality Thin Si Film By Spe Regrowth on Epitaxially Grown Spinel

1985 ◽  
Vol 53 ◽  
Author(s):  
Takafumi Kimura ◽  
Hideki Yamawaki ◽  
Yoshihiro Arimoto ◽  
Kazuto Ikeda ◽  
Masaru Ihara ◽  
...  
Keyword(s):  
Hall Mobility ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Stacking Fault ◽  
High Electron ◽  
Si Substrate ◽  
High Quality ◽  
Spinel Layer ◽  
Fault Density ◽  
Amorphous Si

ABSTRACTA high-quality thin Si layer on epitaxial spinel(MgO·Al2O3) on Si substrate has been developed. It was obtained by the solid phase epitaxial (SPE) regrowth of amorphous Si with Si seed islands on the epitaxially grown spinel. The SPE-Si layer on the epitaxial spinel was superior to conventional Si on sapphire (SOS) in stacking-fault density, Hall mobility, and contamination from the insulating materials. The SPESi layer has low stacking-fault density of 10–50 cm-2, even for 0.4 μm thickness. This value is eight orders of magnitude less than that of Si on epitaxial spinel obtained by vapor phase epitaxial (VPE) growth with SiH4. The SPE-Si also has high electron Hall mobility of 880 cm2/V-s for n=5×l016 cm-3, for 1-μm-thick Si. This value is about 85% of that in bulk Si, and is higher than that in Si on spinel grown by VPE-growth and SOS. (100) spinel layer was grown on (100) Si substrate by a MgCI2-Al-HCI-CO2-H2 VPE growth system. After thermal oxidation, Si seed islands were grown on the spinel by the pyrolysis of SiH4. Amorphous Si was deposited on the Si seed islands by chemical vapor deposition (CVD) of SiH4. The SPE-Si layer was obtained by regrowth of the amorphous Si in a hydrogen atmosphere.

Copper-Enhanced Solid Phase Crystallization of Amorphous Silicon Films

1996 ◽  
Vol 424 ◽  
Author(s):  
Dong Kyun Sohn ◽  
Dae Gyu Moon ◽  
Byung Tae Ahn
Keyword(s):  
Solid Phase ◽  
Copper Ions ◽  
Crystallization Time ◽  
Solid Phase Crystallization ◽  
New Process ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Fractal Size ◽  
Temperature Crystallization

AbstractLow-temperature crystallization of amorphous Si (a-Si) films was investigated by adsorbing copper ions on the surface of the films. The copper ions were adsorbed by spincoating of Cu solution. This new process lowered the crystallization temperature and reduced crystallization time of a-Si films. For 1000 ppm solution, the a-Si film was partly crystallized down to 500°C in 20 h and almost completely crystallized at 530°C in 20 h. The adsorbed Cu on the surface acted as a seed of crystalline and caused fractal growth. The fractal size was varied from 10 to 200 prm, depending on the Cu concentration in solution. But the grain size of the films was about 400 nm, which was similar to that of intrinsic films crystallized at 600°C.

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