Nucleation Phenomena during Titanium Silicon Reaction

1989 ◽  
Vol 146 ◽  
Author(s):  
Ivo J.M.M. Raaijmakers ◽  
Leo J. van Ijzendoorn ◽  
Anton M.L. Theunissen ◽  
Ki-Bum Kim
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cross Section ◽  
Nucleation And Growth ◽  
Diffusion Control ◽  
Transmission Electron ◽  
First Results ◽  
Titanium Silicon

ABSTRACTIt is known that thermal annealing of Ti and amorphous (α) Si first results in an amorphous silicide, after which the crystalline disilicide grows under diffusion control. The situation with respect to the reaction of Ti with crystalline (x) Si is much less clear. We have investigated the reaction of Ti with xSi with (high resolution) cross-section transmission electron microscopy and in-situ Rutherford backscattering spectroscopy. It is shown that an amorphous silicide can also be formed on crystalline Si. The presence of this amorphous silicide as a precursor to the C49TiSi2 phase is suggested to be an important issue in the nucleation and growth of the disilicide.

Heteroepitaxy of CoSi2 on Patterned Si(100) Substrates

1995 ◽  
Vol 402 ◽  
Author(s):  
O. P. Karpenko ◽  
D. J. Eaglesham ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cross Section ◽  
Nucleation And Growth ◽  
High Quality ◽  
Plan View ◽  
Transmission Electron ◽  
Triple Points ◽  
Sharp Interfaces

AbstractThis study has addressed the effect of starting surface topography on the nucleation and growth of epitaxial siicide layers. CoSi2 layers were grown via the template technique on one-dimensionally patterned Si (100) substrates. These substrates contained mesa stripes, running parallel to Si[011], and exhibited either smoothly varying sinusoidal profiles, or a number of well defined Si Ihkl) facets. Conventional plan view and high resolution cross section transmission electron microscopy were used to analyze the films grown on these substrates. The orientation and morphology of the CoSi2 grains depend on the angle (θ), between the CoSi2 / Si interface normal and Si (100). High quality (100) oriented CoSi2 grew on the tops and bottoms of mesa structures, where θ < 5°, and formed atomically sharp interfaces with the substrate. In contrast, CoSi2 (110) and CoSi2 (221 ) grains nucleated along the sidewalls of the mesa structures. The CoSi2 (110) grains formed rough interfaces with the substrate and were terminated by regions of step bunching at the grain boundary / substrate triple points. CoSi2 (110) grains were most highly concentrated in regions where θ varied from 5° to 12°. Similarly, the CoSi2 (221 ) grains formed faceted (111) b-type silicide / substrate interfaces, and were most highly concentrated in regions where θ > 10°. These data suggest that double height steps, step bunches and facets on the substrate are related to the nucleation of misoriented silicide grains.

Defects Analysis of Diamond Films in Cross Section Using Cathodoluminescence and High-Resolution Transmission Electron Microscopy

2001 ◽  
Vol 78-79 ◽  
pp. 197-204
Author(s):  
Daisuke Takeuchi ◽  
Hideyuki Watanabe ◽  
Sadanori Yamanaka ◽  
Hidetaka Sawada ◽  
Hideki Ichinose ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cross Section ◽  
Diamond Films ◽  
Transmission Electron ◽  
Defects Analysis
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