In-situ, analytical, high-voltage and high-resolution transmission electron microscopy of Xe ion implantation into Al

1999 ◽  
Vol 48 (5) ◽  
pp. 511-518 ◽  
Author(s):  
K. Furuya ◽  
k. Mitsuishi ◽  
M. Song ◽  
T. Saito
1989 ◽  
Vol 169 ◽  
Author(s):  
C. P. Burmester ◽  
L. T. Wille ◽  
R. Gronsky ◽  
B. T. Ahn ◽  
V. Y. Lee ◽  
...  

AbstractHigh resolution transmission electron microscopy during in‐situ quenching of YBa2Cu3Oz is used to study the kinetics of microdomain formation during oxygen loss in this system. Image simulations based on atomic models of oxygen‐vacancy order in the basal plane of this material generated by Monte Carlo calculations are used to interpret high resolution micrographs of the structures obtained by quenching. The observed domain structures agree well with those obtained from the simualtions.


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