Thin silicon dioxide and nitrided oxide using rapid thermal processing for trench capacitors

1991 ◽  
Vol 6 (11) ◽  
pp. 2362-2370 ◽  
Author(s):  
Kenji Yoneda ◽  
Yoshihiro Todokoro ◽  
Morio Inoue
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Dielectric Strength ◽  
Gate Insulator ◽  
Time To Failure ◽  
Electrical Characteristics ◽  
Gate Insulators ◽  
Conventional Furnace ◽  
The Mean ◽  
Mean Time

Electrical characteristics of trench capacitors using RTO (Rapid Thermal Oxidation) oxides, nitroxides, and reoxidized nitroxides as the gate insulators are discussed. High temperature RTO is effective in preventing oxide thinning at the trench corner, and so the dielectric strength of trench capacitors is improved drastically. The mean time to failure (MTTF) of trench capacitors using RTO is more than ten times longer than that of trench capacitors using conventional furnaces. Using reoxidized nitroxides as the gate insulator, superior charge to breakdown (QBD) is obtained. RTP (Rapid Thermal Processing) is superior to the process using the conventional furnace for the gate insulators of trench capacitors. Improvements in temperature uniformity, repeatability, and lessening of slip line formation are essential for RTP equipment to be practical.

Thin Silicon Dioxide using the Rapid Thermal Oxidation Process for Trench Capacitors

1989 ◽  
Vol 146 ◽  
Author(s):  
Morio Inoue ◽  
Kenji Yoneda
Keyword(s):  
High Temperature ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Dielectric Strength ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Temperature Uniformity ◽  
Conventional Furnace ◽  
Thermal Oxidation Process

ABSTRACTElectrical characteristics of trench capacitor using RTO oxide, nitroxide and reoxidized nitroxide as the gate insulator are discussed. High temperature RTO is effective to prevent the oxide thinning at the trench corner and dielectric strength of trench capacitor is improved drastically. The lifetime of trench capacitors using RTO is more than 10 times longer than that of trench capacitors using conventional furnaces. Using reoxidized nitroxide as the gate insulator, higher charge to breakdown is obtained. The RTP is superior to the process using the conventional furnace for gate insulator of trench capacitor. Improvement in temperature uniformity and operation reproducibility are essential to RTP equipments for production use.

scholarly journals Surveillance System in Smart Cities: A Dependability Evaluation Based on Stochastic Models

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 876
Author(s):  
Igor Gonçalves ◽  
Laécio Rodrigues ◽  
Francisco Airton Silva ◽  
Tuan Anh Nguyen ◽  
Dugki Min ◽  
...  
Keyword(s):  
Surveillance System ◽  
Smart Cities ◽  
Heterogeneous Data ◽  
Time To Failure ◽  
Video Streams ◽  
Dependability Evaluation ◽  
The Mean ◽  
Mean Time ◽  
The Internet Of Things

Surveillance monitoring systems are highly necessary, aiming to prevent many social problems in smart cities. The internet of things (IoT) nowadays offers a variety of technologies to capture and process massive and heterogeneous data. Due to the fact that (i) advanced analyses of video streams are performed on powerful recording devices; while (ii) surveillance monitoring services require high availability levels in the way that the service must remain connected, for example, to a connection network that offers higher speed than conventional connections; and that (iii) the trust-worthy dependability of a surveillance system depends on various factors, it is not easy to identify which components/devices in a system architecture have the most impact on the dependability for a specific surveillance system in smart cities. In this paper, we developed stochastic Petri net models for a surveillance monitoring system with regard to varying several parameters to obtain the highest dependability. Two main metrics of interest in the dependability of a surveillance system including reliability and availability were analyzed in a comprehensive manner. The analysis results show that the variation in the number of long-term evolution (LTE)-based stations contributes to a number of nines (#9s) increase in availability. The obtained results show that the variation of the mean time to failure (MTTF) of surveillance cameras exposes a high impact on the reliability of the system. The findings of this work have the potential of assisting system architects in planning more optimized systems in this field based on the proposed models.

On classes of life distributions based on the mean time to failure function

2021 ◽  
Vol 58 (2) ◽  
pp. 289-313
Author(s):  
Ruhul Ali Khan ◽  
Dhrubasish Bhattacharyya ◽  
Murari Mitra
Keyword(s):  
Damage Model ◽  
Replacement Policy ◽  
Time To Failure ◽  
Mean Time To Failure ◽  
Moment Convergence ◽  
Life Distributions ◽  
Cumulative Damage Model ◽  
The Mean ◽  
Age Replacement ◽  
Mean Time

AbstractThe performance and effectiveness of an age replacement policy can be assessed by its mean time to failure (MTTF) function. We develop shock model theory in different scenarios for classes of life distributions based on the MTTF function where the probabilities $\bar{P}_k$ of surviving the first k shocks are assumed to have discrete DMTTF, IMTTF and IDMTTF properties. The cumulative damage model of A-Hameed and Proschan [1] is studied in this context and analogous results are established. Weak convergence and moment convergence issues within the IDMTTF class of life distributions are explored. The preservation of the IDMTTF property under some basic reliability operations is also investigated. Finally we show that the intersection of IDMRL and IDMTTF classes contains the BFR family and establish results outlining the positions of various non-monotonic ageing classes in the hierarchy.

Diffusion of Zn into Gaas 0.6 P0.4:Te From Zn-Doped Oxide Films By Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
A. Usami ◽  
Y. Tokuda ◽  
H. Shiraki ◽  
H. Ueda ◽  
T. Wada ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Zn Diffusion ◽  
Enhanced Diffusion ◽  
Conventional Furnace ◽  
Zn Concentration ◽  
The Difference ◽  
Doped Oxide

ABSTRACTRapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C for 6 s was about two orders of magnitude higher than that of the conventional furnace diffused samples at 800°C for 60 min. The enhanced diffusion of Zn by RTD may be ascribed to the stress field due to the difference in the thermal expansion coefficient between the doped oxide films and GaAs0.6P0.4 materials, and due to the temperature gradient in GaAs0.6P0 4 materials. The Zn diffusion coefficient at Zn concentration of 1.0 × l018 cm−3 was 3.6 × 10−11, 3.1 × 10−11 and 5.0 × 10−12 cm2 /s for the RTD samples at 950°C for 6 s from Zn-, (Zn,Ga)- and (Zn,P)-doped oxide films, respectively. This suggests that Zn diffusibility was controlled by the P in the doped oxide films.

Điều trị tăng liều Imatinib trên bệnh nhân u mô đệm đường tiêu hoá giai đoạn muộn tiến triển sau điều trị bước 1 liều chuẩn

2020 ◽  
Author(s):  
Kien Do Hung
Keyword(s):  
Primary Tumor ◽  
Standard Dose ◽  
Performance Status ◽  
Gastric Tumor ◽  
High Dose ◽  
Time To Failure ◽  
Gastrointestinal Stromal Tumours ◽  
Mean Time To Failure ◽  
The Mean ◽  
Mean Time

Objective: Evaluating the result of high-dose imatinib for metastatic gastrointestinal stromal tumours after failure standard-dose first line. Patients and method: Restrospective analysis of 46 patients with metastatic gastrointestinal stromal tumours after failure standard-dose imatinib treated with high-dose imatinib at K hospital from 1/2015 đến 10/2019. Results: Median age was 54.6±9.5, male was 58.7%. The common primary tumor was gastric tumor. The mean time to failure of imatinib standard-dose 400mg/day was 38.2±5.3 months. Liver lesions were the most common lesions progressed after imatinib standard-dose failure (71.7%), primary tumor progressed was 39.1%. There was no patient who had complete response with treatment, the proportion of partial response accounted for 21.7% and stable disease was 45.7%. The clinical benefit rate was 67.4%. The sex-female, primary gastric tumor, good ECOG performance status, neutrophils, hemoglobine and albumin before treatment were the significant prognostic factors affecting the treatment response, p <0.05. The mean time to failure was 22.5 ± 3.4 (months), (min: 2.0; max: 58.0), median was 11.0 months. Conclusion: Treatment of high-dose imatinib after failure standard-dose 400mg/day showed the efficacy and good tolerance in metastatic GISTs.

scholarly journals On the estimation of the mean time to failure by simulation

2017 ◽  
Author(s):  
Peter W. Glynn ◽  
Marvin K. Nakayama ◽  
Bruno Tuffin
Keyword(s):  
Time To Failure ◽  
Mean Time To Failure ◽  
The Mean ◽  
Mean Time

Nitridation of vanadium in molecular nitrogen: a comparison of rapid thermal processing (RTP) and conventional furnace annealing

Vacuum ◽  
2001 ◽  
Vol 61 (2-4) ◽  
pp. 479-484 ◽  
Author(s):  
I Galesic ◽  
U Reusch ◽  
C Angelkort ◽  
H Lewalter ◽  
A Berendes ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Molecular Nitrogen ◽  
Rapid Thermal Processing ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing

Effects of Rapid Thermal Processing on SiO2/GaAs Interfaces

1988 ◽  
Vol 126 ◽  
Author(s):  
Yutaka Tokuda ◽  
Masayuki Katayama ◽  
Nobuo Ando ◽  
Akio Kitagawa ◽  
Akira Usami ◽  
...  
Keyword(s):  
Outer Surface ◽  
Photoelectron Spectroscopy ◽  
Thermal Processing ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Rf Sputtering ◽  
Electron Traps ◽  
Conventional Furnace ◽  
Pile Up ◽  
Transient Spectroscopy

ABSTRACTEffects of rapid thermal processing (RTP) on SiO2/GaAs interfaces have been investigated with Auger electron spectroscopy and X-ray photoelectron spectroscopy. SiO2 films of 100, 175, 200 and 1250 nm thickness have been deposited on liquid encapsulated Czochralski-grown (100) n-type GaAs wafers by the RF sputtering method. RTP has been performed at 800°C for 6 s. For comparison, conventional furnace processing (CFP) has also been performed at 800°C for 20 min for 200-nm-thick SiO2/GaAs. The Ga is observed on the outer SiO2 surface for RTP samples as well as CFP samples. This indicates that the outdiffusion of Ga occurs after only 6 s at 800°C even through 1250-nm-thick SiO2 films. The depth profile of Ga reveals the pile-up of Ga on the outer SiO2 surface for both RTP and CFP samples. The amount of Ga on the outer surface gradually increases in the thickness range 1250 to 175 nm. The As is also observed on the outer surface. The amount of Ga and As on the outer surface rapidly increases at 100 nm thickness. Electron traps in RTP samples have been studied with deep-level transient spectroscopy. Different electron traps are produced in GaAs by RTP between 100-nm- and 200-nm-thick SiO2/GaAs. It is thought that the production of different traps by RTP is related to the amount of Ga and As loss through SiO2 films from GaAs.

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