Characterization of KNbO3 Thin Films Deposited by Ion Beam Sputtering using a Computer-Controlled Rotating Target Holder

ABSTRACTKNbO3 is a strong candidate as a material for use as channel waveguides due to a high electrooptic figure of merit. High quality single crystals are difficult to obtain due to incongruent melting of the compound. Control of cation concentration and oxygen incorporation are problems encountered in current thin film processing routes.In order to overcome the problems discussed above, an ion beam deposition system featuring a computer-controlled rotatable target holder and quartz crystal resonator (QCR) feedback loop has been developed. Multicomponent films are produced via sputtering from elemental or compound targets sequentially exposed to an ion beam. Initial results are presented on the use of this new technique for the deposition of KNbO3. Pressed KNbO3, Nb2O5, and KO2 powders were used as sputtering targets. By varying the programmed thickness of deposited film from each target being sputtered, the ratio of K:Nb could be reproducibly controlled. The variation in sticking coefficients due to substrate temperature was also compensated for in this manner.Thin films were analyzed by X-ray diffraction and TEM to determine phases present and film microstructure. Film morphology and composition has been studied as a function of substrate temperature, layer thickness, and ion beam process parameters. The relation between deposition parameters and film characteristics are discussed.

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X-ray photoelectron spectroscopy studies on AlN thin films grown by ion beam sputtering in reactive assistance of N+/N2+ ions: Substrate temperature induced compositional variations

Thin Solid Films ◽

10.1016/j.tsf.2017.07.006 ◽

2017 ◽

Vol 636 ◽

pp. 626-633 ◽

Cited By ~ 8

Author(s):

Neha Sharma ◽

S. Ilango ◽

S. Dash ◽

A.K. Tyagi

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Photoelectron Spectroscopy ◽

Ion Beam ◽

Ion Beam Sputtering ◽

X Ray ◽

Beam Sputtering ◽

Compositional Variations ◽

Spectroscopy Studies

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Deposition and characterization of YBa2Cu3O7−δ thin films grown in situ by sequential ion beam sputtering

Journal of Materials Research ◽

10.1557/jmr.1992.2003 ◽

1992 ◽

Vol 7 (8) ◽

pp. 2003-2016 ◽

Cited By ~ 5

Author(s):

J.A. Kittl ◽

W.L. Johnson ◽

C.W. Nieh

Keyword(s):

Thin Films ◽

Ion Beam ◽

Film Surface ◽

Lattice Expansion ◽

Ion Beam Sputtering ◽

Orientation Relations ◽

Deposition Parameters ◽

Beam Sputtering ◽

Lattice Distortions

We investigated the in situ growth of YBa2Cu3O7−δ superconducting thin films by a sequential ion beam sputtering technique, studying the relations among deposition parameters, structural and superconducting properties. The films were deposited following the stacking sequence of YBa2Cu3O7−δ, with individual layer thicknesses nominally equal to one monolayer. O2 was supplied during deposition. Predominantly c-axis oriented films were grown on (100) SrTiO3, (100) MgO, and oxidized Si (SiO2/Si) substrates. The microstructure and film-substrate orientation relations were studied by transmission electron microscopy. X-ray studies showed the presence of homogeneous and inhomogeneous strains along the c-direction that persisted after low temperature oxygen anneals. Resistivity measurements showed correlations between the superconducting transition characteristics and the lattice distortions along the c-direction. The effect of deposition parameters on the lattice distortions was investigated, finding that the c-axis lattice parameter was larger in films grown at lower temperatures. This was interpreted in terms of the thermally activated dissociation of O2 at the film surface during growth. We assumed that the c-axis lattice expansion was due to kinetic limitations to the incorporation of oxygen into the film during growth. This led to a consistent description of the results obtained in this work and the O2 pressure dependence of the c-axis lattice expansion reported for other in situ techniques. Studies were performed on films grown by this technique as well as on films grown in situ by magnetron sputtering in an attempt to elucidate the nature of the defect structure causing the c-axis lattice distortions.

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Influence of ion-beam sputtering deposition parameters on highly photosensitive and transparent CdZnO thin films

Journal of Materials Science ◽

10.1007/s10853-014-8396-8 ◽

2014 ◽

Vol 49 (20) ◽

pp. 6917-6929 ◽

Cited By ~ 16

Author(s):

Shruti Verma ◽

Sushil Kumar Pandey ◽

Mukul Gupta ◽

Shaibal Mukherjee

Keyword(s):

Thin Films ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Sputtering Deposition ◽

Deposition Parameters ◽

Beam Sputtering

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Effects of the Substrate Temperature on the Crystallization and Development of Texture of Mn-Zn Ferrite thin Films Deposited by Ion Beam Sputtering

MRS Proceedings ◽

10.1557/proc-317-541 ◽

1993 ◽

Vol 317 ◽

Cited By ~ 1

Author(s):

Hae Seok Cho ◽

Sang Ki Ha ◽

Min Hong Kim ◽

Hyeong Joon Kim

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Ion Beam ◽

Preferred Orientation ◽

Crystallographic Structure ◽

Ion Beam Sputtering ◽

Zn Ferrite ◽

Beam Sputtering ◽

Ferrite Thin Films ◽

Deposited Films

ABSTRACTWe investigated the effects of the substrate temperature (Ts) on the crystallization and the development of texture of Mn-Zn ferrite thin films on SiO2/Si (100) under ion bombardment during ion beam sputtering. As-deposited films showed ferrimagnetic properties in spite of their crystallographic structure of wustite. The crystallographic structure of as-deposited films changed from (111) wustite structure to (222) spinel structure as oxygen partial pressure increased. The (222) preferred orientation seems to originate from oxygen-deficit ambient and preferential resputtering of oxygen ions in films during sputtering. The interplanar distance of the films deposited without oxygen flow decreased with increasing Ts due to release of compressive stress. The saturation Magnetization (Ms) of the film had maximum value at about 275°C, while the resistivity was almost of the same value irrespective of Ts. The unusual fact that crystallization and preferred orientation were less progressed at higher Ts was discussed.

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AMORPHOUS CARBON THIN FILMS FOR OPTOELECTRIC DEVICE APPLICATION

International Journal of Modern Physics B ◽

10.1142/s0217979200000200 ◽

2000 ◽

Vol 14 (02n03) ◽

pp. 206-217 ◽

Cited By ~ 16

Author(s):

T. SOGA ◽

T. JIMBO ◽

K. M. KRISHNA ◽

M. UMENO

Keyword(s):

Thin Films ◽

Amorphous Carbon ◽

Ion Beam ◽

Carbon Films ◽

Ion Beam Sputtering ◽

Photovoltaic Properties ◽

Deposition Parameters ◽

Beam Sputtering ◽

Device Applications ◽

Carbon Thin Films

Thin films of amorphous carbon (a-C and a-C:H) have been deposited using different carbon precursor materials such as camphor - a natural source, graphite and CH4/H2 mixture by different deposition methods, such as ion beam sputtering, pyrolysis, pulsed laser deposition and r.f. plasma CVD. The films are subjected to various standard characterization techniques in order to tailor the required structural and opto-electrical properties for device applications. The effects of deposition parameters and annealing temperatures on the properties of carbon thin films have been investigated. Both p- and n- type of carbon films have been obtained either through controlling the deposition parameters of a particular method or by doping. Solar cells of various configurations, such as n-C/p-Si, p-C/n-Si and n-C/p-C/p-Si, have been fabricated and their photoresponse characteristics are studied. An efficiency of 1.52% has been obtained, so far, for the cell of configuration n-C/p-C/p-Si. Effects of substrate temperature on the photovoltaic properties are also outlined in brief.

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