Si(001) Molecular Beam Epitaxy: Enhanced Diffusion or Bonding?

1989 ◽  
Vol 159 ◽  
Author(s):  
S. Clarke ◽  
M.R. Wilby ◽  
D.D. Vvedensky
Keyword(s):  
Monte Carlo ◽  
Molecular Beam Epitaxy ◽  
Lattice Model ◽  
Molecular Beam ◽  
Structural Evolution ◽  
Growth Simulation ◽  
Enhanced Diffusion ◽  
Directional Bonding

ABSTRACTThrough application of a lattice model of the Si(001) surface, implemented in a Monte Carlo growth simulation we investigate the structural evolution of the Si(001) surface during molecular beam epitaxy. Particular emphasis is placed upon identifying the role of both enhanced diffusion and directional bonding.

Suppression of Boron Diffusion by Fluorine Implantation in Preamorphized Silicon

2004 ◽  
Vol 810 ◽  
Author(s):  
Giuliana Impellizzeri ◽  
José H. R. dos Santos ◽  
Salvatore Mirabella ◽  
Francesco Priolo ◽  
Enrico Napolitani ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Strong Interaction ◽  
Thermal Equilibrium ◽  
Molecular Beam ◽  
Physical Mechanism ◽  
Equilibrium Concentration ◽  
Boron Diffusion ◽  
Equilibrium Conditions ◽  
Enhanced Diffusion

ABSTRACTWe have investigated the role of fluorine in the reduction of transient enhanced diffusion (TED) and thermal diffusion (TD) of B in preamorphized Si layers implanted with F. For this purpose, we have employed B delta-doped layers, grown by molecular beam epitaxy (MBE), as markers for silicon self-interstitials (Is). We have shown that boron TED decreases with increasing amount of incorporated F up to the complete TED suppression. Furthermore, we have clearly demonstrated that the physical mechanism that suppresses the boron TED is not a B-F chemical bonding, but a strong interaction between F atoms and Is. In addition, we have seen that fluorine strongly reduces B diffusion also under Is thermal equilibrium concentration. Our results clearly show that the presence of F lowers the Is density very effectively, reducing the boron TED as well as the dopant diffusion under equilibrium conditions.

scholarly journals Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

2021 ◽  
pp. 2100438
Author(s):  
Wouter Mortelmans ◽  
Karel De Smet ◽  
Ruishen Meng ◽  
Michel Houssa ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Van Der Waals

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Contamination in molecular beam epitaxy: the role of arsenic drag effect

1997 ◽  
Vol 175-176 ◽  
pp. 1270-1277 ◽  
Author(s):  
Z.R. Wasilewski ◽  
S.J. Rolfe ◽  
R.A. Wilson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Drag Effect

Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy

2012 ◽  
Vol 112 (2) ◽  
pp. 023504 ◽  
Author(s):  
V.-M. Korpijärvi ◽  
A. Aho ◽  
P. Laukkanen ◽  
A. Tukiainen ◽  
A. Laakso ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Role of high nitrogen flux in InAlN growth by plasma-assisted molecular beam epitaxy

2020 ◽  
Vol 544 ◽  
pp. 125720
Author(s):  
Marta Sawicka ◽  
Natalia Fiuczek ◽  
Paweł Wolny ◽  
Anna Feduniewicz-Żmuda ◽  
Marcin Siekacz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Nitrogen ◽  
Nitrogen Flux
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