Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy

2012 ◽  
Vol 112 (2) ◽  
pp. 023504 ◽  
Author(s):  
V.-M. Korpijärvi ◽  
A. Aho ◽  
P. Laukkanen ◽  
A. Tukiainen ◽  
A. Laakso ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

2009 ◽  
Vol 311 (7) ◽  
pp. 2002-2005 ◽  
Author(s):  
Y. Cordier ◽  
N. Baron ◽  
S. Chenot ◽  
P. Vennéguès ◽  
O. Tottereau ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Critical Role ◽  
Strain Engineering

Laser molecular beam epitaxy of vertically self-assembled GaN nanorods on Ta metal foil: role of growth temperature and laser repetition rate

CrystEngComm ◽  
2019 ◽  
Vol 21 (36) ◽  
pp. 5448-5454 ◽  
Author(s):  
Prashant Tyagi ◽  
Ch. Ramesh ◽  
B. S. Yadav ◽  
S. S. Kushvaha ◽  
M. Senthil Kumar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Repetition Rate ◽  
Molecular Beam ◽  
Metal Foil ◽  
Laser Repetition Rate ◽  
Laser Molecular Beam Epitaxy ◽  
Flexible Devices ◽  
Self Assembled

Self-aligned GaN nanorod assembly directly grown on metal foil substrates is very attractive for developing flexible devices.

scholarly journals Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

2021 ◽  
pp. 2100438
Author(s):  
Wouter Mortelmans ◽  
Karel De Smet ◽  
Ruishen Meng ◽  
Michel Houssa ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Van Der Waals

Nitrogen incorporation in GaNAs layers grown by molecular beam epitaxy

2006 ◽  
Vol 89 (3) ◽  
pp. 031907 ◽  
Author(s):  
Q. X. Zhao ◽  
S. M. Wang ◽  
M. Sadeghi ◽  
A. Larsson ◽  
M. Friesel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

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