scholarly journals Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

2021 ◽  
pp. 2100438
Author(s):  
Wouter Mortelmans ◽  
Karel De Smet ◽  
Ruishen Meng ◽  
Michel Houssa ◽  
Stefan De Gendt ◽  
...  
1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.


1997 ◽  
Vol 175-176 ◽  
pp. 1270-1277 ◽  
Author(s):  
Z.R. Wasilewski ◽  
S.J. Rolfe ◽  
R.A. Wilson

2012 ◽  
Vol 112 (2) ◽  
pp. 023504 ◽  
Author(s):  
V.-M. Korpijärvi ◽  
A. Aho ◽  
P. Laukkanen ◽  
A. Tukiainen ◽  
A. Laakso ◽  
...  

2020 ◽  
Vol 544 ◽  
pp. 125720
Author(s):  
Marta Sawicka ◽  
Natalia Fiuczek ◽  
Paweł Wolny ◽  
Anna Feduniewicz-Żmuda ◽  
Marcin Siekacz ◽  
...  

2011 ◽  
Vol 1290 ◽  
Author(s):  
J. K. Mishra ◽  
S. Dhar ◽  
M. A. Khaderabad ◽  
O. Brandt

ABSTRACTGd:GaN layers grown with different Gd concentrations by molecular beam epitaxy (MBE) are studied using photoconductivity and photo-thermoelectric power spectroscopy. Our study reveals that the incorporation of Gd produces a large concentration of acceptor-like defects in the GaN lattice. The defect band is found to be located ~450meV above the valence band. Moreover, the concentration of defects is found to increase with the Gd concentration. The effect of annealing on the structural and the magnetic properties of GaN implanted with Gd is also investigated. A clear correlation between the saturation magnetization and the defect density is observed in implanted samples. The colossal magnetic moment per Gd ion and the ferromagnetism observed in this material is explained in terms of the formation of giant defect cluster around each Gd ion.


1989 ◽  
Vol 164 ◽  
Author(s):  
S. Wagner ◽  
S.H. Wolff ◽  
J.M. Gibson

AbstractWe report and interpret two groups of experiments on the role that hydrogen plays in the formation of silicon microcrystals. We show that the growth of singlecrystal Si by molecular beam epitaxy at 475°C is disrupted by H2, which induces the formation of microcrystals. In crystallization experiments of non-hydrogenated a-Si and of hydrogenated a-Si:H on a hot stage in a transmission electron microscope, hydrogen facilitates the nucleation of crystallites. We explain our observations with a substantial reduction of the grain boundary energy by hydrogen.


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