Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Low temperature photoluminescence from GaAs impinged by mass-separated low-energy C+ ion beams during molecular beam epitaxy

1993 ◽  
Vol 316 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Stefan Winter ◽  
Shinji Kimura ◽  
Yushin Tsai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Ion Beam ◽  
Ion Beams ◽  
Beam Current Density ◽  
Molecular Beam Epitaxy Growth ◽  
Spectral Evolution ◽  
Activation Rate

ABSTRACTC-doped GaAs films were prepared by novely a developed, combined ion beam and molecular beam method (CIBMBE) as a function of hyperthermal (30–500 eV) energies (EC+) of carbon ion (C+) beam. Ion beams of a fixed beam current density were impinged during molecular beam epitaxy growth of GaAs at substrate temperature of 550 °C. Low temperature (2 K) photoluminescence (PL) has been used to characterize the samples together with Hall effects measurements at room temperature. Through the spectral evolution of an emission denoted by [g-g]β which is a specific emission relevant to acceptor-acceptor pairs, the activation rate was confirmed to increase with increasing EC+ for EC+ lower than 170 eV. It was explicitly demonstrated that the most effective Ec+ to establish highest activation rate is located at ~170 eV. This growing activation rate was suggested to be attributed to the enhanced migration of both impinged C and host constituent atoms with increasing EC+. This surmise was supported also by Hall effect measurements which revealed the maximum net hole concentration ( |NA-ND| ) for EC+=170 eV. For EC+ higher than ~170 eV, increasing EC+ was found to induce the reduction of activation rate. It was suggested that this observation is ascribed not to the formation of C donors but to the enhanced sputtering effect of impinged C+ ions with increasing EC+.

Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy

2002 ◽  
Vol 20 (3) ◽  
pp. 1221 ◽  
Author(s):  
Gon Namkoong ◽  
W. Alan Doolittle ◽  
April S. Brown ◽  
Maria Losurdo ◽  
Pio Capezzuto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam

The Effect of Deposition Method on Growth Morphology - Comparison of Molecular Beam Epitaxy, Ion Beam Assisted Deposition and Sputter Deposition

1998 ◽  
Vol 528 ◽  
Author(s):  
Th. Michely ◽  
M. Kalff ◽  
G. Comsa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Film Structure ◽  
Sputter Deposition ◽  
Formation Mechanisms ◽  
Island Formation ◽  
Ion Beam Assisted Deposition ◽  
Film Roughness

AbstractThin films created by the deposition or under influence of atoms with hyperthermal energies (E = 100 -104eV) exhibit properties which differ in many respects from those of films created by deposition of atoms with thermal energy. The morphologies of thin Pt-films deposited on Pt(111) under otherwise identical deposition conditions by molecular beam epitaxy (MBE), ion beam assisted deposition (IBAD) and sputter deposition (SD) differ in film structure size, island shapes and film roughness. The different film structure sizes are unambiguously traced back to two different island formation mechanisms inherent to these deposition methods. While in MBE the islands result from nucleation in a supersaturated adatom gas, in IBAD and SD they result by direct or indirect creation of adatom clusters as a consequence of single impacts of energetic atoms present in the depositing particle flux. The differences in film roughness are not only due to the different island formation mechanisms, but seem to be closely related to the different step edge structures at the growth front.

Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

2011 ◽  
Vol 323 (1) ◽  
pp. 68-71 ◽  
Author(s):  
A.M. Mizerov ◽  
V.N. Jmerik ◽  
M.A. Yagovkina ◽  
S.I. Troshkov ◽  
P.S. Kop'ev ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of

Surface reconstruction induced by a pulsed low-energy ion beam during Si(111) molecular beam epitaxy

1999 ◽  
Vol 425 (2-3) ◽  
pp. 185-194 ◽  
Author(s):  
A.V. Dvurechenskii ◽  
V.A. Zinovyev ◽  
V.A. Markov ◽  
V.A. Kudryavtsev
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy

Carbon Doping into GaAs Using Low-Energy Hydrocarbon Ions

1998 ◽  
Vol 510 ◽  
Author(s):  
Hirokazu Sanpei ◽  
Takayuki Shima ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Yasuhiro Fukuzawa ◽  
...  
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Carbon Doping ◽  
Co Doping ◽  
Hall Effect Measurements ◽  
Low Temperature Photoluminescence

AbstractThe role of hydrogen (H) in carbon (C)-doped GaAs was examined by co-doping of C and H atoms using low-energy hydrocarbon (CH+ and CH3+) ions. Experiments were carried out using the combined ion beam and molecular beam epitaxy (CIBMBE) system. Samples were characterized by low-temperature photoluminescence at 2K and Hall effect measurements at room temperature. Results show that incorporated C atoms are optically and electrically activated as acceptors even by hydrocarbon ion impingement. The effect of H incorporation was found to be noticeable when impinged current density of CH3+ ion beam is high that produces equivalent net hole carrier concentration greater than ∼1018 cm−3

scholarly journals Kinetics of Molecular Beam Epitaxy: Effect of Ion-Induced Sputtering

1990 ◽  
Vol 202 ◽  
Author(s):  
Peter M. Richards
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Binding Energy ◽  
Molecular Beam Epitaxy ◽  
Monte Carlo Simulations ◽  
Molecular Beam ◽  
Ion Beam ◽  
Kinetics Of

ABSTRACTSteady state roughness of surfaces growing by molecular beam epitaxy is investigated by Monte Carlo simulations under conditions where an ion beam is also present which sputters adatoms off the surface. If the sputtering is random, it only increases the roughness. But if the sputtering probability is strongly dependent on the binding energy of an adatom within a cluster or island, the ions can have a smoothening effect. Physical arguments are given in support of the results.

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