Imaging by Sliding Planes in Scanning Tunnelling Microscopy

1989 ◽  
Vol 159 ◽  
Author(s):  
John D. Todd ◽  
John B. Pethica
Keyword(s):  
Point Defects ◽  
Layered Materials ◽  
Atomic Scale ◽  
Single Atom ◽  
Scanning Tunnelling Microscope ◽  
Mechanical Contact ◽  
Conductance Fluctuations ◽  
Microscope Images ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy

ABSTRACTScanning tunnelling microscope images of layered materials in a non-uhv environment exhibit various anomalous phenomena, including enhanced corrugation heights, periodicity over large areas and a marked absence of point defects. We have modified a precision indentation device to allow STM rastering of a tip across a surface, while simultaneously monitoring mechanical contact. Images we have obtained from this apparatus on an HOPG sample exhibit atomic scale resolution with contact areas much larger than a single atom. Contrast in the image results from periodic conductance fluctuations as the layers of the sample undergo shear in the region of the tip. We provide a model for this process, which explains a variety of curious, and otherwise unrelated phenomena occurring during STM imaging of these materials.

scholarly journals Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon

Nanoscale ◽  
2017 ◽  
Vol 9 (43) ◽  
pp. 17013-17019 ◽  
Author(s):  
Muhammad Usman ◽  
Benoit Voisin ◽  
Joe Salfi ◽  
Sven Rogge ◽  
Lloyd C. L. Hollenberg
Keyword(s):  
High Precision ◽  
Direct Observation ◽  
Wave Functions ◽  
Central Cell ◽  
Atomic Scale ◽  
Scanning Tunnelling Microscope ◽  
Microscope Images ◽  
Scanning Tunnelling ◽  
Physics Modeling

High-precision physics modeling at the atomic scale indicates potential for direct observation of central-cell-effects in scanning tunnelling microscope images of single dopant wave functions.

scholarly journals Ni nanocrystals on HOPG(0001): A scanning tunnelling microscope study

2013 ◽  
Vol 4 ◽  
pp. 406-417 ◽  
Author(s):  
Michael Marz ◽  
Keisuke Sagisaka ◽  
Daisuke Fujita
Keyword(s):  
Surface Science ◽  
Crystal Formation ◽  
Scanning Tunnelling Microscope ◽  
Annealing Step ◽  
Cluster Shape ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy ◽  
Stepwise Annealing ◽  
Poster Presentations ◽  
Ni Clusters

The growth mode of small Ni clusters evaporated in UHV on HOPG has been investigated by scanning tunnelling microscopy. The size, the size distribution, and the shape of the clusters have been evaluated for different evaporation conditions and annealing temperatures. The total coverage of the surface strongly depends on the evaporation rate and time, whereas the influence of these parameters is low on the cluster size. Subsequent stepwise annealing has been performed. This results in a reduction of the total amount of the Ni clusters accompanied by a decreasing in the overall coverage of the surface. The diameter of the clusters appears to be less influenced by the annealing than is their height. Besides this, the cluster shape is strongly influenced, changing to a quasi-hexagonal geometry after the first annealing step, indicating single-crystal formation. Finally, a reproducible methodology for picking up individual clusters is reported Parts of this work have been presented as oral or poster presentations in several national and international conferences (Meeting of the Physical Society of Japan 2011 and 2012, 6th International Symposium on Surface Science 2012, and ImagineNano 2013)..

scholarly journals Single-atom contacts with a scanning tunnelling microscope

2009 ◽  
Vol 11 (12) ◽  
pp. 125006 ◽  
Author(s):  
J Kröger ◽  
N Néel ◽  
A Sperl ◽  
Y F Wang ◽  
R Berndt
Keyword(s):  
Single Atom ◽  
Scanning Tunnelling Microscope ◽  
Scanning Tunnelling
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