The Electronic Structure of the “0.15 eV” Cu Acceptor Level in GaAs
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AbstractCu diffused GaAs samples have been investigated using different kinds of FΠR techniques and photoluminescence. The results suggest that tne “0.15 eV” level originates from the ioruzation of a neutral, nearly substitutional Cu acceptor at a Ga site. Furthermore, the results indicate a distortion in the [100] direction. The ground state binding energy obtained from the effective-mass-like excited states is 157.8 meV at 6K.
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2015 ◽
Vol 5
(1)
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1993 ◽
Vol 216
(3-6)
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pp. 353-358
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2008 ◽
Vol 22
(12)
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pp. 1923-1932
1994 ◽
Vol 01
(04)
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pp. 649-653
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