The Electronic Structure of the “0.15 eV” Cu Acceptor Level in GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
E. Janzén ◽  
M. Linnarsson ◽  
B. Monemar ◽  
M. Kleverman

AbstractCu diffused GaAs samples have been investigated using different kinds of FΠR techniques and photoluminescence. The results suggest that tne “0.15 eV” level originates from the ioruzation of a neutral, nearly substitutional Cu acceptor at a Ga site. Furthermore, the results indicate a distortion in the [100] direction. The ground state binding energy obtained from the effective-mass-like excited states is 157.8 meV at 6K.

1989 ◽  
Vol 163 ◽  
Author(s):  
M. Kleverman ◽  
E. Janzén ◽  
M. Linnarsson ◽  
B. Monemar

AbstractThe 0.11 eV Mn acceptor has been investigated using different kinds of FΠR techniques, Zeeman spectroscopy, and photoluminescence. The results clearly fits into the Зd5+ shallow hole model for Mn° and show that the 0.11 eV level originates from the io-nization of a neutral, substitutional Mn acceptor at a Ga-site. The ground state binding energy obtained from the effective-mass like excited states is 112.4 meV.


Author(s):  
Shad Husain

This topic deals in the study of correlation of ground and excited states of even nuclei like 160 and 4He. The main objective of present work is to develop more theoretical techniques applicable in nuclear physics. The work is also extended to discrete excited states as well as odd even nuclei. The work is useful for the calculation of nuclear many body problems for spherically symmetric nuclear quantization representation. The ground state calculation of 160 and 4He are done using G. matrix, which also help in calculation of ground state binding energy and one body two body densities.


2008 ◽  
Vol 22 (12) ◽  
pp. 1923-1932
Author(s):  
JIA LIU ◽  
ZI-YU CHEN

The influence of a perpendicular magnetic field on a bound polaron near the interface of a polar–polar semiconductor with Rashba effect has been investigated. The material is based on a GaAs / Al x Ga 1-x As heterojunction and the Al concentration varying from 0.2 ≤ x ≤ 0.4 is the critical value below which the Al x Ga 1-x As is a direct band gap semiconductor.The external magnetic field strongly altered the ground state binding energy of the polaron and the Rashba spin–orbit (SO) interaction originating from the inversion asymmetry in the heterostructure splitting of the ground state binding energy of the bound polaron. How the ground state binding energy will be with the change of the external magnetic field, the location of a single impurity and the electron area density have been shown in this paper, taking into account the SO coupling. The contribution of the phonons are also considered. It is found that the spin-splitting states of the bound polaron are more stable, and, in the condition of weak magnetic field, the Zeeman effect can be neglected.


1994 ◽  
Vol 01 (04) ◽  
pp. 649-653 ◽  
Author(s):  
A.J. PATCHETT ◽  
S.S. DHESI ◽  
R.I.R. BLYTH ◽  
S.D. BARRETT

An intense photoemission feature is observed at a binding energy of ~10 eV in the UV photoemission spectra from the (0001) surfaces of bulk single crystals of rare-earth metals. This emission cannot be explained in terms of ground state electronic structure and we have been unable to attribute its existence to the presence of contamination of the surface. We present some evidence that may indicate its origin lies in the creation, by the photoemission process, of a metastable two-hole final state.


1989 ◽  
Vol 67 (1) ◽  
pp. 63-71 ◽  
Author(s):  
Magne Haugen ◽  
Erlend Østgaard

The ground-state energy of spin-polarized hydrogen, deuterium, and tritium is calculated by means of a modified variational lowest order constrained-variation method, and the calculations are done for five different two-body potentials. Spin-polarized H↓ is not self-bound according to our theoretical results for the ground-state binding energy. For spin-polarized D↓, however, we obtain theoretical results for the ground-state binding energy per particle from −0.42 K at an equilibrium particle density of 0.25 σ−3 or a molar volume of 121 cm3/mol to + 0.32 K at an equilibrium particle density of 0.21 σ−3 or a molar volume of 142 cm3/mol, where σ = 3.69 Å (1 Å = 10−10 m). It is, therefore, not clear whether spin-polarized deuterium should be self-bound or not. For spin-polarized T↓, we obtain theoretical results for the ground-state binding energy per particle from −4.73 K at an equilibrium particle density of 0.41 σ−3 or a molar volume of 74 cm3/mol to −1.21 K at an equilibrium particle density of 0.28 σ−3 or a molar volume of 109 cm3/mol.


2016 ◽  
Vol 954 ◽  
pp. 149-160 ◽  
Author(s):  
F. Schulz ◽  
P. Achenbach ◽  
S. Aulenbacher ◽  
J. Beričič ◽  
S. Bleser ◽  
...  

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