The Deep 0.11eV Manganese Acceptor Level in GaAs
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AbstractThe 0.11 eV Mn acceptor has been investigated using different kinds of FΠR techniques, Zeeman spectroscopy, and photoluminescence. The results clearly fits into the Зd5+ shallow hole model for Mn° and show that the 0.11 eV level originates from the io-nization of a neutral, substitutional Mn acceptor at a Ga-site. The ground state binding energy obtained from the effective-mass like excited states is 112.4 meV.
2015 ◽
Vol 5
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2008 ◽
Vol 22
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pp. 1923-1932
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2016 ◽
Vol 31
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pp. 1650084
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2007 ◽
Vol 390
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pp. 256-262
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