EL-2 Defect Formation and Carbon Incorporation in GaAs grown by Organometallic Vapor Phase Epitaxy

1989 ◽  
Vol 163 ◽  
Author(s):  
R. Venkatasubramanian ◽  
J.M. Borrego ◽  
S.K. Ghandhi
Keyword(s):  
Partial Pressure ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Defect Formation ◽  
Deep Level ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Surface Species ◽  
Phase Loss

AbstractThe anti-site defect AsGa, EL-2, is used to understand the nature of arsenic surface species during the Organometallic Vapor Phase Epitaxy(OMVPE) of GaAs. The concentration of EL-2 in unintentionally doped n-GaAs, measured by Deep Level Transient Spectroscopy, is presented as a function of AsH3 partial pressure, TMGa partial pressure and the growth temperature. Based on this data, a model for EL-2 incorporation in OMVPE GaAs is developed in which all surface species As-H, are converted to As2 at around 765 ° C. Under the same set of growth conditions, relative carbon levels measured by 4K Photoluminescence, suggest that the increase in carbon levels with growth temperature is due to the gas-phase loss of H radical from the As-H species.

Alkoxide Doping of GaAs During Organometallic Vapor Phase Epitaxy

1992 ◽  
Vol 282 ◽  
Author(s):  
Y. Park ◽  
M. Skowronski ◽  
T. M. Rosseel
Keyword(s):  
Activation Energy ◽  
Band Gap ◽  
Oxygen Content ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Deep Level ◽  
Vapor Phase Epitaxy ◽  
Photoluminescence Intensity ◽  
Organometallic Vapor Phase Epitaxy ◽  
Fully Depleted

ABSTRACTDoping of GaAs with dimethylaluminum methoxide and its effects have been studied during metalorganic vapor phase epitaxy. Oxygen concentration decreases exponentially with increasing growth temperature and the activation energy equal to 1.8 eV.Increase of oxygen content with decrease of V/III ratio indicates that oxygen most likely occupies arsenic site. Photoluminescence intensity was observed to decrease with increasing oxygen contentand three new deep level luminescence peaks appeared at 75, 96, and 160 meV below the band gap. This, together with the fact that as-grown layers are fully depleted, indicates that oxygen is electrically active in OMVPE GaAs and forms deep non-radiative recombinationcenters.

Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy

2010 ◽  
Vol 7 (7-8) ◽  
pp. 2040-2042 ◽  
Author(s):  
Takashi Kawasaki ◽  
Atsushi Nishikawa ◽  
Naoki Furukawa ◽  
Yoshikazu Terai ◽  
Yasufumi Fujiwara
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

scholarly journals Growth Temperature Dependence of Eu-Doped GaN Grown by Organometallic Vapor Phase Epitaxy

2010 ◽  
Vol 59 (9) ◽  
pp. 671-674
Author(s):  
Atsushi NISHIKAWA ◽  
Takashi KAWASAKI ◽  
Naoki FURUKAWA ◽  
Yoshikazu TERAI ◽  
Yasufumi FUJIWARA
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Temperature Dependence

GaInAsP/InP ORGANOMETALLIC VAPOR PHASE EPITAXY FOR RESEARCH AND FABRICATION OF DEVICES

1990 ◽  
Vol 01 (03n04) ◽  
pp. 347-367 ◽  
Author(s):  
KAZUHITO FURUYA ◽  
YASUYUKI MIYAMOTO
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Vapor Phase ◽  
Optical Communication ◽  
Ballistic Transport ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Technique

GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is widely used for the fabrication of lasers and detectors used in optical communication. Here we describe the apparatus and growth technique of OMVPE and point out important growth conditions to obtain device quality single-crystal materials. Our research includes the use of OMVPE for the study of quantum-well lasers, ballistic-transport electron devices and nanometer heterostructures.

Germanium as a deep level in alxga1− xas grown by organometallic vapor phase epitaxy

1991 ◽  
Vol 20 (10) ◽  
pp. 583-587 ◽  
Author(s):  
R. T. Green ◽  
W. I. Lee
Keyword(s):  
Vapor Phase ◽  
Deep Level ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

Spatial Distribution of Luminescent Centers in Organometallic Vapor Phase Epitaxy Grown ZnxCdl−xSe/InP (001)

1998 ◽  
Vol 535 ◽  
Author(s):  
X. B. Zhang ◽  
S. K. Hark
Keyword(s):  
Spatial Distribution ◽  
Band Gap ◽  
Vapor Phase ◽  
Deep Level ◽  
Vapor Phase Epitaxy ◽  
Spatial Inhomogeneity ◽  
Organometallic Vapor Phase Epitaxy ◽  
Extended Defects ◽  
Flow Ratio ◽  
Luminescent Centers

AbstractZincblende ZnxCdl−xSe alloys were grown on (001) InP by organometallic vapor phase epitaxy (OMVPE) using various VI / H precursor flow ratios, ranging from 0.95 to 12, at a temperature of 420°C. Spatial distribution of luminescent centers in the epilayer was characterized by cathodoluminescence (CL) spectroscopy and imaging. Both near band-gap (NBE) and deep level (DLE) emissions were observed in the spectra, with the width of the NBE peak increases with the VI / II flow ratio. Monochromatic CL images showed that the broadening of the NBE peak has its origin in the spatial inhomogeneity of the luminescent centers of the epilayer. Extended defects responsible for the DLE was only found in pyramidal hillocks seen in the CL images. The density of these defects was found to increase with the VI / I1 flow ratio.

Methods for reducing deep level emissions from ZnSe grown by organometallic vapor phase epitaxy

1993 ◽  
Vol 22 (5) ◽  
pp. 515-519 ◽  
Author(s):  
Salman Akram ◽  
Ishwara Bhat
Keyword(s):  
Vapor Phase ◽  
Deep Level ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

Optimization of InP / Si heteroepitaxial growth conditions using organometallic vapor phase epitaxy

1989 ◽  
Vol 96 (2) ◽  
pp. 369-377 ◽  
Author(s):  
Akio Yamamoto ◽  
Naoto Uchida ◽  
Masafumi Yamaguchi
Keyword(s):  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Heteroepitaxial Growth

Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxy

1991 ◽  
Vol 59 (12) ◽  
pp. 1446-1448 ◽  
Author(s):  
Z. M. Fang ◽  
K. Y. Ma ◽  
R. M. Cohen ◽  
G. B. Stringfellow
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy
Sign in / Sign up

Export Citation Format

Share Document